C O M M U N I C A T I O N S
semiconductor layer and the source/drain silver electrodes printed
from NanoAg-C16 (see Supporting Information). All of the TFTs
exhibited good field-effect transistor characteristics, which con-
formed to the conventional gradual channel model in both the linear
and saturated regimes (Figure 2). The devices gave average mobility
2
-1 -1
6
7
of 0.05-0.08 cm V
s , current on/off ratio of 10 -10 , and
threshold voltage of -8 V. These are similar to those of reference
2
TFTs with vacuum-deposited silver electrodes (mobility ∼0.06 cm
-
1
-1
6
7
V
s
; on/off ratio ∼10 -10 ).
In summary, we have demonstrated a facile synthesis of stable
Figure 1. (a) TEM image of NanoAg-C16 nanoparticles on a grid; (b)
SEM image of NanoAg-C16 film after annealing at 140 °C for 30 s.
silver nanoparticles with a particle size of <10 nm. These
nanoparticles were stabilized with easily detachable alkylamines,
thus permitting their ready conversion at low temperatures to highly
conductive silver elements suitable for low-cost, printed electronic
applications. OTFTs with the printed silver source/drain electrodes
of this nature exhibited TFT properties similar to those using
vacuum-deposited silver electrodes.
Acknowledgment. The assistance of our colleague, Ms. Sandra
Gardner, in obtaining the SEM and TEM images is gratefully
acknowledged. Partial financial support of this work is provided
by the National Institute of Standards and Technology through an
Advanced Technology Grant (70NANB0H3033).
Figure 2. (a) Drain current (ID) versus source-drain voltage (VD) as a
function of gate voltage (VG) for a TFT with printed source/drain electrodes
from NanoAg-C16 (channel length ) 90 µm; channel width ) 2250 µm).
Supporting Information Available: Materials synthesis and
characterization, OTFT fabrication. This material is available free of
charge via the Internet at http://pubs.acs.org.
1
/2
(
b) ID and (-ID) versus VG at a constant VD) -40 V used for calculation
of the mobility and current on/off ratio.
References
A reddish-brown thin film with a thickness of ∼70 nm spin cast
(
1) Katz, H.; Bao, Z.; Gilat, S. Acc. Chem. Res. 2001, 34, 359-369. (b)
from a solution of 1-hexadecylamine-stabilized silver nanoparticles
(
Dimitrakopoulos, C. D.; Malenfant, P. R. L. AdV. Mater. 2002, 14, 99-
NanoAg-C16) in cyclohexane (5-10 wt %) on a glass substrate
117.
turned to a shiny silvery film within 30 s upon heating on a hotplate
at 140-160 °C. Use of a shorter alkylamine, such as 1-dodecyl-
amine (NanoAg-C12), as a stabilizer further lowered the metal-
lization temperature to 120-140 °C. X-ray diffraction pattern of
the resulting silver film showed diffraction peaks at 2θ ) 38.1,
4.2, 64.34, and 77.39°, which are identical to those of a vacuum-
deposited silver thin film. SEM image revealed formation of a
continuous layer comprising of larger coalesced particles of 100-
(2) Kagan, C. R.; Mitzi, D. B.; Dimitrakopoulos, C. D. Science 1999, 286,
9
45-947.
(
(
(
(
3) Huitena, H. E. A.; Gelinck, G. H.; van der Putter, J. B. P. H.; Kuijk, K.
E.; Hart, C. M.; Cantatore, E.; Herwig, P. T.; van Breemen, A. J. J. M.;
de Leeuw, D. M. Nature 2001, 414, 599-600.
4) Ong, B. S.; Wu, Y.; Liu, P.; Gardner, S. J. Am. Chem. Soc. 2004, 126,
3378-3379. (b) Ong, B. S.; Wu, Y.; Liu, P.; Jiang, L.; Murti, K. Synth.
Met. 2004, 142, 49-52.
4
5) Sirringhaus, H.; Tessler, N.; Friends, R. H. Science 1998, 280, 1741-
1
744. (b) Sirringhaus, H.; Kawasem, T.; Friend, R. H.; Shimoda, T.;
Inbasekaran, M.; Wu, W.; Woo, E. P. Science 2000, 290, 2123-2126.
6) Gelinck, G. H.; Geuns, T. C. T.; de Leeuw, D. M. Appl. Phys. Lett. 2000,
5
00 nm (Figure 1b). The electrical conductivity of the resulting
7
7, 1487-1489.
4
-1
silver film was in the range of 2-4 × 10 S cm , which is in the
(7) Kawase, T.; Sirringhaus, H.; Friend, R. H.; Shimoda, T. AdV. Mater. 2001,
1
3, 1601-1605.
same order as that of a vapor-deposited silver thin film of similar
(
8) Wu, Y.; Li, Y.; Ong, B.; Liu, P.; Gardner, S.; Chiang, B. AdV. Mater.
2005, 17, 184-187. (b) Huang, D.; Liao, F.; Molesa, S.; Redinger, D.;
Subramanian, V. J. Electrochem. Soc. 2003, 150, 412-417.
4
-1
thickness (4-6 × 10 S cm ). This high level of conductivity is
more than sufficient for application in any electronic devices. In
addition, the alkylamine-stabilized silver nanoparticles prepared by
the present procedure exhibited good shelf-life stability both in
powder and in solution forms, and this is of critical important in
electronic circuit manufacturing.
(
9) Tate, J.; Rogers, J. A.; Jones, C. D. W.; Li, W.; Bao, Z.; Murphy, D. W.;
Slusher, R. E.; Dodabalapur, A.; Katz, H. E.; Lovinger, A. J. Langmuir
2
000, 16, 6054-6060.
(
10) Gray, C.; Wang, J.; Duthaler, G.; Ritenour, A.; Drzaic, P. Proceedings of
SPIE 2001, 4466, 89-94. (b) Our results on 300 nm thin films of
commercial silver inks gave conductivity up to 2000 S cm- at >200 °C.
11) Fuller, S. B.; Wilhelm, E. J.; Jacobson, J. M. J. Microelectromech. Syst.
1
(
An organic TFT was used to validate the usefulness of the
conductive elements formed from alkylamine-stabilized nano-
particles as the source/drain electrodes. Unlike single-layer conduc-
tive tracks as antennas for RFID tags or conductive lines for
electronic interconnects, a multilayered TFT structure would present
a more challenging environment for testing the structural integrity
and functional performance of printed conductive elements. Poor
interfacial contacts and/or intermixing of organic semiconductor
with the printed silver electrodes would adversely affect the device
performance. Bottom-contact TFTs were built on n-doped silicon
wafer with a poly(3,3′′′-didodecylquarterthiophene) (PQT-12)4
2002, 11, 54-60.
(12) Buffat, P.; Borel, J. P. Phys. ReV. A 1976, 13, 2287-2298.
(
13) Brust, M.; Walker, M.; Bethell, D.; Schiffrin, D. J.; Whyman, R. J. Chem.
Soc., Chem. Commun. 1994, 801. (b) Collier, C. P.; Saykally, R. J.; Shiang,
J. J.; Henrichs, S. E.; Heath, J. R. Science 1997, 277, 1978-1981.
14) Wang, W.; Efrima, S.; Regev, O. Langmuir 1998, 14, 602-610. (b) Wang,
W.; Chen, X.; Efrima, S. J. Phys. Chem. B 1999, 103, 7238-7246.
15) Cliffel, D. E.; Zamborini, F. P.; Gross, S. M.; Murray, R. W. Langmuir
2000, 16, 9699-9702.
(
(
(
16) Mayer, A. B. R.; Grebner, W.; Wannemacher, R. J. Phys. Chem. B 2000,
1
04, 7278-7285. (b) Pastoriza, I.; Liz-Marz a´ n, L. M. Langmuir 2002,
18, 2888-2894.
(
17) Hiramatsu, H.; Osterloh, F. Chem. Mater. 2004, 16, 2509-2511.
JA043425K
J. AM. CHEM. SOC.
9
VOL. 127, NO. 10, 2005 3267