Selective tungsten CVD in a hot walled reactor by silane reduction of WF6

Article abstract of DOI:10.1149/1.2097591

As circuit dimensions decrease, junctions become shallower with a corresponding increase in active area sheet resistance. Selective chemical vapor deposition of tungsten on exposed Si areas has been investigated as a means of increasing both active area a

Full text of DOI:10.1149/1.2097591

Downloaded on 2015-06-09 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-09 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).