Chemical vapor deposition of tungsten (CVD W) as submicron interconnection and via stud

Article abstract of DOI:10.1149/1.2097203

Blanket-deposited CVD W has been developed and implemented in a 4-Mbit DRAM and equivalent submicron VLSI technologies. CVD W was applied as contact stud, interconnect, and interlevel via stud. The technologies have been proven reliable under several reliability stress conditions. Major technical problems involved in CVD W processing, such as adhesion contact resistance, etchability, and hole fill are discussed. A novel technique that uses TiN as a contact and adhesion layer is presented. This technique has led to the resolution of the above technical problems and significantly improved the manufacturability of blanket CVD W processes.

Full text of DOI:10.1149/1.2097203

Downloaded on 2015-03-13 to IP 128.172.10.194 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-13 to IP 128.172.10.194 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-13 to IP 128.172.10.194 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-13 to IP 128.172.10.194 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-13 to IP 128.172.10.194 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).