Characterization of encroachment of selective chemical vapor deposition of tungsten at the edge of contacts

Article abstract of DOI:10.1149/1.2056079

The encroachment of selective chemical vapor deposition of tungsten at the edge of contacts has been examined with RBS, SEM, stylus height measurements, and TEM. Encroachment is minimized by using SiH₄ reduction instead of H₂ reduction, a deposition temperature of 340°C or less, an in situ plasma clean, and a SiH₄/WF₆ flow ratio ≥0.1. Use of a plasma clean can reduce the W grain size by a factor of four and reduce nonuniform consumption of the polysilicon. The improvements using plasma clean are associated with an increase in the density of chemical vapor deposition of tungsten nucleation sites.

Full text of DOI:10.1149/1.2056079

Downloaded on 2015-06-15 to IP 128.255.6.125 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-15 to IP 128.255.6.125 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-15 to IP 128.255.6.125 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-15 to IP 128.255.6.125 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-15 to IP 128.255.6.125 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-15 to IP 128.255.6.125 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-15 to IP 128.255.6.125 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-15 to IP 128.255.6.125 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).