
(1989)
Update date:2022-08-16
Topics:
Ishizaki, K.
Egashira, T.
Tanaka, K.
Celis, P. B.
A direct method of producing ultra-fine nitride and carbide powders of 20 to 40 nm by arc plasma in a controlled atmosphere (with ammonia or methane gas) is described. The powders produced were SiC, TiC, WC (+ W2C), AIN and Si3N
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Nanjing Chemical Material Corp.(NCMC)
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Shaanxi Lighte Optoelectronics Material Co., Ltd.
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Shanghai Korey Pharm Co.,Ltd.(expird)
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Doi:10.1021/jp056272b
(2006)Doi:10.3184/174751917X14967701767021
(2017)Doi:10.1055/s-1980-29072
(1980)Doi:10.1002/jccs.200400089
(2004)Doi:10.1016/S0040-4020(01)88761-5
(1992)Doi:10.1134/S0036024407070291
(2007)