Full text of DOI:10.1063/1.102261

Rapid heteroepitaxial growth of Ge films on (100)GaAs by pulsed supersonic freejet
chemical beam epitaxy
Djula Eres, Douglas H. Lowndes, and Jon Z. Tischler
Citation: Applied Physics Letters 55, 1008 (1989); doi: 10.1063/1.102261
View online: http://dx.doi.org/10.1063/1.102261
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/55/10?ver=pdfcov
Published by the AIP Publishing
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
41.217.58.222 On: Thu, 27 Nov 2014 13:55:01
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
41.217.58.222 On: Thu, 27 Nov 2014 13:55:01
1

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
41.217.58.222 On: Thu, 27 Nov 2014 13:55:01
1