R. Wang et al. / Journal of Alloys and Compounds 490 (2010) 204–207
207
Table 2
Overview of the properties of the samples.
Sample no.
Sintering temperature (◦C)
Density (g cm−3
)
(1 GHz)
tan ı (×10−3) (1 GHz)
TCE (ppm/◦C) (20–200 ◦C)
Flexural strength
(3 point bend) (MPa)
r
S1
S2
S3
800
800
825
2.75
2.66
2.59
5.93
5.72
4.83
<1
8.4
7.5
6.0
200
164
150
the XRD patterns which indicates that the glass-ceramic compos-
ite does not react with the Ag conductor. Fig. 5(b) shows the SEM
image of S2 co-fired with silver paste at 800 ◦C for 2 h. No cracks
appear and the interface between LTCC material and electrode is
clear. It is revealed that the sample has a good compatibility with
silver paste. Moreover, the interface between the glass-ceramic and
the Ag electrode matches well and gets good adherence.
4. Conclusions
The CaF2–AlF3–SiO2 ternary oxyfluoride glass-ceramics with
low dielectric constant and low sintering temperature were pre-
pared. The sintering behavior, microstructures, phase compositions
and dielectric properties were studied. These glass-ceramics can
be sintered at a low temperature 800–825 ◦C, and as the compo-
sition changed from S1 to S3, the shrinkage increased from 15
to 17%. Moreover, the dielectric constant decreased from 5.93 to
4.83, and TCE value is reduced from 8.4 to 6.0 ppm/◦C. The oxyflu-
oride glass-ceramics, with low dielectric losses (<0.001), enough
mechanical strength and good co-fired compatibilities with Ag
electrode, should be promising candidates of LTCC dielectric mate-
rial for electronic substrates or passive integration.
Acknowledgments
This work was supported by National Science Foundation
of China under grants of 50425204, 50572043, 10774087 and
50621201, and Ministry of Education of China through Seeding
Foundation of Major Projects.
References
[1] R.R. Tummala, J. Am. Ceram. Soc. 74 (1991) 895–908.
[2] H. Jantunen, T. Kangasvieri, J. Vähäkangas, S. Leppävuori, J. Eur. Ceram. Soc. 23
(2003) 2541–2548.
[3] S.-H. Yoon, D.-W. Kim, S.-Y. Cho, K.S. Hong, J. Eur. Ceram. Soc. 23 (2003)
2549–2552.
[4] J. Takahashi, H. Nakano, K. Kageyama, J. Eur. Ceram. Soc. 26 (2006) 2123–2127.
[5] M. Valant, D. Suvorov, R.C. Pullar, K. Sarma, N.M. Alford, J. Eur. Ceram. Soc. 26
(2006) 2777–2783.
[6] J.-R. Kim, D.-W. Kim, I.-S. Cho, B.S. Kim, J.-S. An, K.S. Hong, J. Eur. Ceram. Soc. 27
(2007) 3075–3079.
[7] Y. Imanaka, Multilayered Low Temperature Cofired Ceramic (LTCC) Technology,
Springer, New York, 2005, pp. 21–23.
Fig. 5. (a) XRD result of S2 co-fired with 10 wt.% silver powders at 800 ◦C for 2 h. (b)
SEM micrograph of S2 co-fired with silver paste in air at 800 ◦C for 2 h.
[8] C.-C. Chiang, S.-F. Wang, Y.-R. Wang, Y.-F. Hsu, J. Alloys Compd. 461 (2008)
612–616.
[9] M.A. Sanoj, M.R. Varma, J. Alloys Compd. 477 (2009) 565–569.
[10] G.-H. Chen, X.-Y. Liu, J. Alloys Compd. 431 (2007) 282–286.
[11] Y.-J. Choi, J.-H. Park, W.-J. Ko, J.-H. Park, S. Nahm, J.-G. Park, J. Electroceram. 14
(2005) 157–162.
[12] S. Kemethmüller, M. Hagymasi, A. Stiegelschmitt, A. Roosen, J. Am. Ceram. Soc.
90 (2007) 64–70.
[13] C.-L. Huang, C.-L. Pan, W.-C. Lee, J. Alloys Compd. 462 (2008) L5–L8.
[14] C.-C. Cheng, T.-E. Hsieh, I.-N. Lin, J. Eur. Ceram. Soc. 23 (2003) 2553–2558.
[15] R. Matz, D. Götsch, R. Karmazin, R. Männer, B. Siessegger, J. Electroceram. 22
(2009) 209–215.
[16] E.V. Kolobkova, V.G. Melekhin, A.N. Penigin, Glass Phys. Chem. 33 (2007) 8–13.
[17] R. Wang, J. Zhou, H.J. Zhao, B. Li, L.T. Li, J. Eur. Ceram. Soc. 28 (2008) 2877–2881.
[18] S.M. Han, E.S. Aydil, J. Appl. Phys. 83 (1998) 2172–2178.
[19] S.S. Han, H.R. Kim, B.S. Bae, J. Electrochem. Soc. 146 (1999) 3383–3388.
[20] L.B. Su, W.Q. Yang, Y.J. Dong, S.M. Zhou, G.Q. Zhou, J. Xu, J. Syn. Cryst. 33 (2004)
88–91.
from 8.4 to 6.0 ppm/◦C (see Table 2). The flexural strength also
decreases from 200 to 150 MPa, which is because of the variation of
microstructure with the changing of the composition. As shown in
Fig. 4(a–c), more dispersive small pores are left from S1 to S3, and
general, all the three samples exhibit proper TCE values which are
close to that of GaAs chips (5.5 ppm/◦C) and relatively high strength
which is enough for LTCC substrates.
Fig. 5(a) shows the XRD result of S2 co-fired with 10 wt.% sil-
ver powders at 800 ◦C for 2 h. There is no new phase appeared in