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12032-78-9

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12032-78-9 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 12032-78-9 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,3 and 2 respectively; the second part has 2 digits, 7 and 8 respectively.
Calculate Digit Verification of CAS Registry Number 12032-78:
(7*1)+(6*2)+(5*0)+(4*3)+(3*2)+(2*7)+(1*8)=59
59 % 10 = 9
So 12032-78-9 is a valid CAS Registry Number.
InChI:InChI=1/Mn.P/rMnP/c1-2

12032-78-9Related news

MANGANESE PHOSPHIDE (cas 12032-78-9) thin films and nanorods grown on gallium phosphide and on glass substrates07/27/2019

We report a simple and fast route to grow ferromagnetic manganese phosphide polycrystalline films and nanorods on GaP and on glass substrates using metalorganic vapor phase deposition. Increasing the growth temperature (≥600 °C) and growth time (≥30 min) results in nucleation of secondary MnP...detailed

12032-78-9Relevant articles and documents

Li reaction mechanism of MnP nanoparticles

Sim, Soojin,Cho, Jaephil

, p. A669-A672 (2012)

MnP nanoparticles (MnPs) with a particle size of 7 phases. During lithium dealloying (charging to 2 V), LiMnP phase was turned into the LiP and LiP5 phases.

Electronic structure of MnSb and MnP

Okuda,Senba,Sato,Shimada,Namatame,Taniguchi

, p. 657 - 660 (1999)

We have investigated the valence-band and conduction-band electronic structure of MnSb and MnP by means of ultraviolet photoemission and inverse-photoemission spectroscopies. The photoemission and inverse-photoemission spectra are qualitatively consistent

Spin-waves in MnP

Todate, Yoshiei,Yamada, Kazuyoshi,Endoh, Yasuo,Ishikawa, Yoshikazu

, p. 36 - 38 (1987)

Spin-waves in MnP have been measured by means of neutron inelastic scattering at various temperatures. Dispersion relation along a-axis exhibits anomalous wave vector and temperature dependences, while the quadratic q dependence was observed along both b and c-axis. The characteristic feature of the spin-wave dispersion relations agree qualitatively with those predicted on analogy with rare earth metals.

Synthesis of InP nanofibers from tri(m-tolyl)phosphine: An alternative route to metal phosphide nanostructures

Wang, Junli,Yang, Qing,Zhang, Zude,Li, Tanwei,Zhang, Shuyuan

, p. 227 - 233 (2010)

The synthesis of InP nanofibers via a new Ullmann-type reaction of indium nanoparticles with tri(m-tolyl)phosphine (P(PhMe)3) was typically performed to illustrate an alternative route for the preparation of nanostructured metal phosphides, including III-V (13-15) and transition-metal phosphides. Triarlyphosphine compounds such as other two tri(m-tolyl)phosphine isomers, diphenyl(p-tolyl)phosphine, and triphenylphosphine were comparably employed to synthesize InP nanocrystals. From the aspect of the carbonization of triarlyphosphines, Raman spectroscopy and thermo-gravimetric analysis (TGA) investigations of the InP products showed that the stability of these triarlyphosphines conformed to the order of tri(p-tolyl)phosphine ≈ tri(o-tolyl)phosphine 3) 3 (typically see: J. M. Nedeljkovic, O. I. Micic, S. P. Ahrenkiel, A. Miedaner and A. J. Nozik, J. Am. Chem. Soc., 2004, 126, 2632) and P(C8H 17)3 (C. Qian, F. Kim, L. Ma, F. Tsui, P. D. Yang and J. Liu, J. Am. Chem. Soc., 2004, 126, 1195) according to the difference in preparative temperature for phosphide synthesis. Raman and photoluminescence properties of the as-synthesized InP nanocrystals were further studied, and the synthetic mechanism of our method was reasonably investigated by GC-MS analysis. Moreover, the current route was successfully extended to prepare GaP, MnP, CoP and Pd5P2 nanocrystals. The Royal Society of Chemistry 2010.

ThMnPnN (Pn = P, As): Synthesis, Structure, and Chemical Pressure Effects

Cao, Guang-Han,Feng, Zhifa,Hu, Bingfeng,Jing, Qiang,Li, Baizhuo,Liu, Bo,Liu, Zichen,Luo, Huiqian,Ma, Jie,Mao, Huican,Mei, Yuxue,Ren, Qingyong,Ren, Zhi,Shao, Yeting,Sun, Yuping,Tan, Shugang,Wang, Cao,Wang, Zhicheng,Xia, Yuanhua,Zhang, Fuxiang

, (2020)

Mn-based ZrCuSiAs-type pnictides ThMnPnN (Pn = P, As) containing PbO-type Th2N2 layers were synthesized. The crystal and magnetic structures are determined using X-ray and neutron powder diffraction. While neutron diffraction indicates a C-type antiferromagnetic state at 300 K, the temperature dependence of the magnetic susceptibility shows cusps at 36 and 52 K respectively for ThMnPN and ThMnAsN. The susceptibility cusps are ascribed to a spontaneous antiferromagnetic-to-antiferromagnetic transition for Mn2+ moments, which is observed for the first time in Mn-based ZrCuSiAs-type compounds. In addition, measurements of the resistivity and specific heat suggest an abnormal increase in the density of states at the Fermi energy. The result is discussed in terms of the internal chemical pressure effect.

Epitaxial MnP thin films: epitaxial growth, magnetic and electrical properties

Choi, Jeongyong,Choi, Sungyoul,Sohn,Park, Hyoyeol,Park, Yongsup,Park, Hyun-Min,Hong,Cho, Sunglae

, p. e112-e114 (2006)

We have grown 500 ? MnP on undoped GaAs(1 0 0) substrate using solid-source molecular beam epitaxy. In order to characterize the crystal structure of MnP, we performed in-situ reflection high energy electron diffraction and θ-2θ XRD X-ray diffraction studies. From the measurements of superconducting quantum interference device, Quantum Design, MnP thin film shows ferromagnetic ordering at around 291.5 K. It shows a metallic resistivity in MnP thin film.

Next-nearest neighbour contributions to P 2p3/2 X-ray photoelectron binding energy shifts of mixed transition-metal phosphides M1-xM′xP with the MnP-type structure

Grosvenor, Andrew P.,Cavell, Ronald G.,Mar, Arthur

, p. 2702 - 2712 (2007)

X-ray photoelectron (XPS) and X-ray absorption (XANES) spectroscopic measurements have been made for several series of mixed transition-metal phosphides M1-xM′xP (Co1-xMnxP, Mn1-xVxP, and Co1-xVxP), which adopt the MnP-type structure (M is more electronegative than M′). The P 2p binding energy shifts displayed by the mixed metal phosphide members do not follow the trend shown by the simple binary phosphides, a deviation which arises from the contribution of next-nearest neighbour effects operating on the primary photoemission site. The magnitude of this contribution can be derived from a simple charge potential model taking the metal electronegativity differences into account. It is suggested that these next-nearest neighbour contributions induce a charge transfer between the two dissimilar metals via metal-metal bonding, which modifies the Madelung potential experienced at the photoemission site. This charge transfer has been confirmed by analysis of the Co 2p XPS spectra as well as the P and Mn K-edge XANES spectra.

Self-assembled nanowhiskers grown by MBE on InP(001) surface

Bouravleuv, Alexei,Minami, Kazuyuki,Ishibashi, Takayuki,Sato, Katsuaki

, p. 2793 - 2799 (2006)

Ge and MnP nanowhiskers were synthesized by molecular-beam epitaxy technique on InP(001) surface concurrently. The growth of Ge nanowhiskers is found to be assisted by Mn-based nanocluster-mediated vapour-liquid-solid mechanism of growth, whereas the grow

A tetragonal polymorph of SrMn2P2 made under high pressure-theory and experiment in harmony

Xie, Weiwei,Winiarski, Micha? J.,Klimczuk, Tomasz,Cava

, p. 6835 - 6838 (2017/07/10)

Following the predictions of total energy calculations, a tetragonal SrMn2P2 phase is proposed and successfully formed under high pressure. At ambient pressure, SrMn2P2 adopts the primitive trigonal La2O3 structure type (space group P3m1). However, the results of total energy calculations indicate that SrMn2P2 should be more stable in the tetragonal ThCr2Si2 structure type (space group I4/mmm) than in its known trigonal structure, thus motivating our synthetic experiments. Guided by these calculations, a new tetragonal polymorph of SrMn2P2 was found under the relatively mild conditions of 5 GPa applied pressure at a temperature of 900 °C through the transformation of the ambient pressure trigonal form. The new polymorph has the body centered tetragonal ThCr2Si2 structure type, as predicted. The electronic structure calculations indicate the likelihood of antiferromagnetic, semiconducting properties for the high pressure SrMn2P2 phase.

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