12063-98-8Relevant academic research and scientific papers
New pnictinogallanes [H2GaE(SiMe3)2]3 (E = P, As) - Formation, structural characterization, and thermal decomposition to afford nanocrystalline GaP and GaAs
Janik, Jerzy F.
, p. 532 - 537 (1998)
The new compounds [H2GaE(SiMe3)2]3 (E = P (1), As (2)), the first authenticated examples of a phosphinogallane and an arsinogallane containing the GaH2 moiety,are prepared via efficient dehydrosilylation from the respective combinations of H3Ga·NMe3 and E(SiMe3)3 in diethyl ether or toluene. Compounds 1 and 2 are characterized by elemental analysis, NMR, IR, and mass spectrometry. Single-crystal X-ray structural studies show that the molecular structures of 1 and 2 feature a flattened six-member ring of alternating Ga and E centers. Both compounds are reasonably stable at -30°C but spontaneously decompose at ambient temperatures, 2 noticeably faster than 1, with the evolution of HSiMe3, H2, and E(SiMe3)3. The pyrolysis of 1 yields nanocrystalline GaP while the pyrolysis of solids from decayed 2 results in nanocrystalline GaAs as determined from XRD studies. Under applied pyrolysis conditions, the thermally accelerated dehydrosilylation of the precursors is accompanied by a side-evolution of CH4 and retention of small quantities of amorphous Si/C phases.
High filling fraction gallium phosphide inverse opals by atomic layer deposition
Graugnard,Chawla,Lorang,Summers
, (2006)
High filling fraction gallium phosphide (GaP) inverse opals were fabricated by atomic layer deposition within the void spaces of silica colloidal crystal templates. Depositions were performed from 400 to 500 °C using trimethylgallium and tris(dimethylamino)phosphine precursors. The resulting films were characterized by optical reflectance, which indicated infiltration as high as 100% of the conformal film growth maximum, corresponding to a volume filling fraction of 0.224. X-ray diffraction measurements confirmed the crystallinity of the film. These results indicate the fabrication of three-dimensional photonic crystals using a III-V optoelectronic material with sufficient dielectric contrast to form a full photonic band gap in the visible.
Thickness inhomogenities in the organometallic chemical vapor deposition of GaP
Liu,Aspnes
, (2008)
We analyze exponential lateral-thickness variations observed in the growth of GaP on (001) GaAs, thermally generated Si O2, (001) Si, and nanoscopically roughened Si surfaces by organometallic chemical vapor deposition, using as a reference the polycrystalline GaP deposited on the Mo susceptor surrounding the 2 in. wafers. We find these variations to be due to differences in the chemical reactivities of the various surfaces toward the generation of a precursor, probably a H-P=Ga-C H3 dimer adduct, by heterogeneous catalysis followed by desorption and diffusion through the gas phase.
Mild benzene-thermal route to GaP nanorods and nanospheres
Gao, Shanmin,Xie, Yi,Lu, Jun,Du, Guoan,He, Wei,Cui, Deliang,Huang, Baibiao,Jiang, Minhua
, p. 1850 - 1854 (2002)
GaP nanorods and nanospheres were synthesized from a mild benzene-thermal route at 240 and 300 °C, respectively, using Na, P, and GaCl3 as the starting materials. The structure of the products was identified as zinc blende phase by X-ray powder diffraction (XRD). Transmission electron microscopy (TEM) images showed that, when the reaction temperature was 240 °C, the products were nanorods with widths of 20-40 nm and lengths of 200-500 nm and nanospheres with diameters of 20-40 nm. However, when the reaction temperature was increased to 300 °C, the products were only nanospheres, and the diameters increased to 40-60 nm. The reaction proceeded through a metallic gallium intermediate, and a solution-liquid-solid (SLS) mechanism was proposed for the one-dimensional growth. The products were also investigated by UV-vis absorption and X-ray photoelectron spectroscopy.
Aqueous synthesis of III-V semiconductor GaP and InP exhibiting pronounced quantum confinement
Gao, Shanmin,Lu, Jun,Chen, Nan,Zhao, Yan,Xie, Yi
, p. 3064 - 3065 (2002)
A mild aqueous synthesis route was successfully established to synthesize well crystallized and monodisperse GaP and InP nanocrystals, which were proved to exhibit pronounced quantum confinement by room-temperature UV/Vis adsorption and photoluminescence (PL) spectra.
Synthesis and characterization of single-source precursors to nanocrystalline GaP, GaPxAs1-x, and GaPxSb1-x. X-ray crystal structures of [Et2GaP(SiMe3)2]2, (Me3Si)2P[μ-GaEt2]2As(SiMe 3)2
Jouet, Richard J.,Wells, Richard L.,Rheingold, Arnold L.,Incarvito, Christopher D.
, p. 191 - 198 (2000)
The 1:1 mole ratio reaction of Et2GaCl with P(SiMe3)3 resulted in the formation of [Et2GaP(SiMe3)2]2 (1). The mixed-pnicogen compounds (Me3Si)2P[μ-GaEt2]2As(SiMe 3)2 (2) and (Me3Si)2P[μ-GaEt2]2Sb(SiMe 3)2 (3) were prepared from the 2:1:1 mole ratio reactions of Et2GaCl with P(SiMe3)3 and As(SiMe3)3 and P(SiMe3)3 and Sb(SiMe3)3, respectively. Compounds 2 and 3 were also synthesized by comproportionation reactions of 1 and [Et2GaAs(SiMe3)2]2, and 1 and [Et2GaSb(SiMe3)2]2, respectively. Characterization of 1, 2, and 3 was accomplished using multinuclear NMR, elemental analysis, mass spectrometry, and single-crystal X-ray crystallographic analysis. The X-ray crystal structures of compounds 1, 2 and 3 are reported. Thermolysis of 1, 2, and 3 results in the formation of nanocrystalline GaP, GaPxAs1-x, or GaPxSb1-x, respectively. Compound 3 represents the first example of a compound containing a P(μ-Ga)2Sb core.
Synthesis, characterization, and thermal decomposition of [Cl2GaP(SiMe3)2]2, a potential precursor to gallium phosphide
Wells, Richard L.,Self, Mark F.,McPhail, Andrew T.,Aubuchon, Steven R.,Woudenberg, Richard C.,Jasinski, Jerry P.
, p. 2832 - 2834 (1993)
[Cl2GaP(SiMe3)2]2 (1) has been prepared from the 1:1 reaction of GaCl3 with P(SiMe3)3. Thermal decomposition of 1 produces a brown powder which contains GaP, as evidenced by an X-ray powder pattern and partial elemental analysis. Compound 1 crystallizes in the monoclinic space group P21/n (No. 14) with a = 9.754(2) ?, b = 15.585(5) ?, c = 9.839(2) ?, and β = 96.18(1)°, is composed of a planar Ga-P-Ga-P ring, with Ga-P bond distances of 2.378(2) and 2.380(2) ?, and contains exocyclic chlorine and SiMe3 ligands. The ring core is a slightly distorted square, with Ga-P-Ga′ and P-Ga-P′ bond angles of 86.41(7) and 93.59(7)°, respectively. Additionally, 1H NMR confirms that 1 exhibits monomer-dimer equilibrium in solution.
Surfactant-imposed interference in the optical characterization of GaP nanocrystals
Furis, Madalina,Sahoo, Yudhisthira,MacRae, David J.,Manciu, Felicia S.,Cartwright, Alexander N.,Prasad, Paras N.
, p. 11622 - 11625 (2003)
We report on the complications in optical characterization of GaP nanoparticles grown by colloidal chemistry. It is demonstrated that upon exposure to relatively mild heating conditions, the surfactants utilized to arrest growth and/or agglomerization lead to thermal decomposition products, which exhibit optical properties similar to those observed for nanocrystals with broad size distributions. The origin of this photoluminescence is still unknown; however, photoluminescence measurements of surfactants of different purities indicate that the impurities may be responsible for the emission. The results of this study demonstrate the potential complications associated with studying the optical properties of GaP nanocrystals prepared in the presence of commonly utilized surfactants. They suggest that more reliable assignment of the spectral features of nanocrystals can be afforded by a more detailed understanding of the optical properties associated with the surfactants and or their thermal decomposition products.
An analogous solution-liquid-solid (ASLS) growth route to InP hollow spheres and a honeycomb-like macroporous framework
Zheng, Xiuwen,Liu, Changzeng,Xie, Yi
, p. 2364 - 2369 (2006)
Hollow spheres and a honeycomb-like macroporous framework structure of InP have been successfully fabricated by employing Au/In core/shell composite colloid droplets formed in situ as the template and catalyst for a simple analogous solution-liquid-solid (ASLS) growth route. SEM images show that the morphology of the obtained InP is mostly micrometer-scale hollow spheres (>80 %) accreted with honeycomb-like structures (A possible growth mechanism for the micrometer hollow spheres and honeycomb-like macroporous framework is proposed. Wiley-VCH Verlag GmbH & Co. KGaA, 2006.
Synthesis and optical properties of Gallium phosphide nanotubes
Wu, Qiang,Hu, Zheng,Liu, Chun,Wang, Xizhang,Chen, Yi,Lu, Yinong
, p. 19719 - 19722 (2005)
Gallium phosphide nanotubes with zinc blende structure were synthesized for the first time. The as-prepared GaP nanotubes are polycrystalline with diameters of 30-120 nm and occasionally partially filled. The growth has been reasonably proposed to follow vapor-liquid-solid (VLS) mechanism. The integration of the nanotubular structure with the unique intrinsic semiconducting properties of GaP might bring GaP nanotubes some novel optical and electronic properties and applications. ? 2005 American Chemical Society.
