12063-98-8Relevant articles and documents
New pnictinogallanes [H2GaE(SiMe3)2]3 (E = P, As) - Formation, structural characterization, and thermal decomposition to afford nanocrystalline GaP and GaAs
Janik, Jerzy F.
, p. 532 - 537 (1998)
The new compounds [H2GaE(SiMe3)2]3 (E = P (1), As (2)), the first authenticated examples of a phosphinogallane and an arsinogallane containing the GaH2 moiety,are prepared via efficient dehydrosilylation from the respective combinations of H3Ga·NMe3 and E(SiMe3)3 in diethyl ether or toluene. Compounds 1 and 2 are characterized by elemental analysis, NMR, IR, and mass spectrometry. Single-crystal X-ray structural studies show that the molecular structures of 1 and 2 feature a flattened six-member ring of alternating Ga and E centers. Both compounds are reasonably stable at -30°C but spontaneously decompose at ambient temperatures, 2 noticeably faster than 1, with the evolution of HSiMe3, H2, and E(SiMe3)3. The pyrolysis of 1 yields nanocrystalline GaP while the pyrolysis of solids from decayed 2 results in nanocrystalline GaAs as determined from XRD studies. Under applied pyrolysis conditions, the thermally accelerated dehydrosilylation of the precursors is accompanied by a side-evolution of CH4 and retention of small quantities of amorphous Si/C phases.
Thickness inhomogenities in the organometallic chemical vapor deposition of GaP
Liu,Aspnes
, (2008)
We analyze exponential lateral-thickness variations observed in the growth of GaP on (001) GaAs, thermally generated Si O2, (001) Si, and nanoscopically roughened Si surfaces by organometallic chemical vapor deposition, using as a reference the polycrystalline GaP deposited on the Mo susceptor surrounding the 2 in. wafers. We find these variations to be due to differences in the chemical reactivities of the various surfaces toward the generation of a precursor, probably a H-P=Ga-C H3 dimer adduct, by heterogeneous catalysis followed by desorption and diffusion through the gas phase.
Aqueous synthesis of III-V semiconductor GaP and InP exhibiting pronounced quantum confinement
Gao, Shanmin,Lu, Jun,Chen, Nan,Zhao, Yan,Xie, Yi
, p. 3064 - 3065 (2002)
A mild aqueous synthesis route was successfully established to synthesize well crystallized and monodisperse GaP and InP nanocrystals, which were proved to exhibit pronounced quantum confinement by room-temperature UV/Vis adsorption and photoluminescence (PL) spectra.
Synthesis, characterization, and thermal decomposition of [Cl2GaP(SiMe3)2]2, a potential precursor to gallium phosphide
Wells, Richard L.,Self, Mark F.,McPhail, Andrew T.,Aubuchon, Steven R.,Woudenberg, Richard C.,Jasinski, Jerry P.
, p. 2832 - 2834 (1993)
[Cl2GaP(SiMe3)2]2 (1) has been prepared from the 1:1 reaction of GaCl3 with P(SiMe3)3. Thermal decomposition of 1 produces a brown powder which contains GaP, as evidenced by an X-ray powder pattern and partial elemental analysis. Compound 1 crystallizes in the monoclinic space group P21/n (No. 14) with a = 9.754(2) ?, b = 15.585(5) ?, c = 9.839(2) ?, and β = 96.18(1)°, is composed of a planar Ga-P-Ga-P ring, with Ga-P bond distances of 2.378(2) and 2.380(2) ?, and contains exocyclic chlorine and SiMe3 ligands. The ring core is a slightly distorted square, with Ga-P-Ga′ and P-Ga-P′ bond angles of 86.41(7) and 93.59(7)°, respectively. Additionally, 1H NMR confirms that 1 exhibits monomer-dimer equilibrium in solution.
An analogous solution-liquid-solid (ASLS) growth route to InP hollow spheres and a honeycomb-like macroporous framework
Zheng, Xiuwen,Liu, Changzeng,Xie, Yi
, p. 2364 - 2369 (2006)
Hollow spheres and a honeycomb-like macroporous framework structure of InP have been successfully fabricated by employing Au/In core/shell composite colloid droplets formed in situ as the template and catalyst for a simple analogous solution-liquid-solid (ASLS) growth route. SEM images show that the morphology of the obtained InP is mostly micrometer-scale hollow spheres (>80 %) accreted with honeycomb-like structures (A possible growth mechanism for the micrometer hollow spheres and honeycomb-like macroporous framework is proposed. Wiley-VCH Verlag GmbH & Co. KGaA, 2006.
Synthesis and optical properties of Gallium phosphide nanotubes
Wu, Qiang,Hu, Zheng,Liu, Chun,Wang, Xizhang,Chen, Yi,Lu, Yinong
, p. 19719 - 19722 (2005)
Gallium phosphide nanotubes with zinc blende structure were synthesized for the first time. The as-prepared GaP nanotubes are polycrystalline with diameters of 30-120 nm and occasionally partially filled. The growth has been reasonably proposed to follow vapor-liquid-solid (VLS) mechanism. The integration of the nanotubular structure with the unique intrinsic semiconducting properties of GaP might bring GaP nanotubes some novel optical and electronic properties and applications. ? 2005 American Chemical Society.
The growth process, stability of GaP nanocrystals and formation of Ga3P nanocrystals under solvothermal conditions in benzene
Gao, Shanmin,Lu, Jun,Zhao, Yan,Chen, Nan,Xie, Yi
, p. 1822 - 1827 (2003)
The growth process, stability of GaP nanocrystals and the formation of Ga3P nanocrystals under solvothermal conditions were investigated. At moderate reaction times and temperature, the growth process is mainly in accordance with the Ostwald ri
Mass transport model for semiconductor nanowire growth
Johansson, Jonas,Svensson, C. Patrik T.,Maì?rtensson, Thomas,Samuelson, Lars,Seifert, Werner
, p. 13567 - 13571 (2005)
We present a mass transport model based on surface diffusion for metal-particle-assisted nanowire growth. The model explains the common observation that for III/V materials thinner nanowires are longer than thicker ones. We have grown GaP nanowires by metal-organic vapor phase epitaxy and compared our model calculations with the experimental nanowire lengths and radii. Moreover, we demonstrate that the Gibbs-Thomson effect can be neglected for III/V nanowires grown at conventional temperatures and pressures. ? 2005 American Chemical Society.
Chemical vapor transport of solid solutions. 15. Chemical vapor transport of GaP and of mixed crystals in the system ZnS/GaP
Locmelis,Binnewies
, p. 1308 - 1312 (2004)
By means of CVT methods using iodine as transport agent (1000 → 900°C) in the system ZnS/GaP mixed crystals could be prepared. At 900°C the solubility of ZnS in GaP is 7 % the solubility of GaP in ZnS is 10 %. The chemical vapor transport of pure GaP is r
Synthesis and optical study of crystalline GaP nanoflowers
Liu,Bando,Tang,Golberg,Xie,Sekiguchi
, p. 1 - 3 (2005)
GaP nanoflowers composed of numerous GaP nanowires are synthesized through heating InP and Ga2O3 powders. Crystalline GaP nanowires growing from Ga-rich particles have a cubic structure, uniform diameters of ~300 nm, and lengths from several to tens of micrometers. Typically, an individual GaP nanowire displays a hexagonal prism-like morphology with 〈111〉 as the preferential growth direction. Cathodoluminescence measurements show that GaP nanoflowers and GaP nanowires emit at ~600 and ~750 nm, respectively. Additional low-intensity emission peaks are observed for GaP nanoflowers at ~450 nm.
Origin of photoluminescence from colloidal gallium phosphide nanocrystals synthesized via a hot-injection method
Kim, Sungwoo,Lee, Kangha,Kim, Sejin,Kwon, O.-Pil,Heo, Jin Hyuk,Im, Sang Hyuk,Jeong, Sohee,Lee, Doh C.,Kim, Sang-Wook
, p. 2466 - 2469 (2015/02/19)
In this work, photoluminescence from colloidal GaP nanocrystals (NCs) synthesized via a hot-injection method is observed and analyzed. The emission and excitation spectra of the GaP NCs indicate that two transitions, near the direct and indirect bandgaps of bulk GaP, are responsible for the luminescence.
Study of GaP single crystal layers grown on GaN by MOCVD
Li, Shuti,Liu, Chao,Ye, Guoguang,Xiao, Guowei,Zhou, Yugang,et al.
, p. 1942 - 1945 (2011/11/11)
The performance of GaN based devices could possibly be improved by utilizing the good p-type properties of GaP layer and it provides the possibility of the integration of InAlGaN and AlGaInP materials to produce new devices, if high quality GaP compounds can be grown on III-nitride compounds. In this paper, the growth of GaP layers on GaN by metalorganic chemical vapor deposition (MOCVD) has been investigated. The results show that the GaP low temperature buffer layer can provide a high density of nucleation sites for high temperature GaP growth. Using a 40 nm thick GaPbuffer layer, a single crystal GaP layer, whose full-width at half-maxi mum of the (1 1 1) plane measured by double crystal X-ray diffraction is580″, can be grown on GaN. The V/III ratio plays an important rol e in the GaP layer growth and an appropriate V/III ratio can improve thequality of GaP layer. The GaP:Mg layer with hole carrier concentration of 4.2 × 1018 cm-3 has been obtained.
BaGa2Pn2 (Pn = P, As): New semiconducting phosphides and arsenides with layered structures
He, Hua,Stearrett, Ryan,Nowak, Edmund R.,Bobev, Svilen
, p. 7935 - 7940 (2011/01/07)
Reported are the synthesis, the structural characterization, and the electronic band structures of two new Zintl phases: BaGa2P 2 and BaGa2As2. Both compounds are isoelectronic and isotypic and crystallize in a monoclinic system with a new structure type (Pearson symbol mP20). The structures have been established by single-crystal X-ray diffraction, space group P21/c (Z = 4), with lattice parameters as follows: a = 7.3363(13)/7.495(5) A; b = 9.6648(17)/9.901(6) A; c = 7.4261(13)/7.643(5) A; β = 115.373(2)°/115.381(8)° for BaGa2P2/BaGa 2As2, respectively. The atomic arrangements in both cases are devoid of disorder and are best rationalized as polyanionic layers, ∞2[Ga2Pn2]2- (Pn = P, As), with Ba2+ cations separating them. The layers, in turn, can be viewed as the result of condensation of Ga2Pn6 units, which are isosteric with the ethane molecule in its staggered conformation. Structural parallels with other known Zintl phases are presented. The electronic structures, computed using the tight-binding linear muffin-tin orbital methods (TB-LMTO), are discussed as well.
