13450-91-4

Basic information

• Product Name: GALLIUM(III) IODIDE
• Synonyms: GaI3;Gallium iodide (GaI3);galliumiodide(gai3);GALLIUM TRIIODIDE;GALLIUM IODIDE;GALLIUM(III) IODIDE;GALLIUM(III) IODIDE, 99.99%;GALLIUM(III) IODIDE, ANHYDROUS, 99.999%
• CAS NO: 13450-91-4
• Molecular Formula: GaI₃
• Molecular Weight: 450.44
• EINECS: 236-611-6
• Product Categories: Catalysis and Inorganic Chemistry;Chemical Synthesis;Crystal Grade Inorganics;Gallium Salts;GalliumMetal and Ceramic Science;Salts;metal halide;Catalysis and Inorganic Chemistry;Chemical Synthesis;Gallium;Gallium Salts;Materials Science;Metal and Ceramic Science
• Mol File: 13450-91-4.mol
• Article Data: 9

Chemical Properties

• Melting Point: 345 °C (subl.)(lit.)
• Boiling Point: 345°C
• Appearance: Yellow-green/powder
• Density: 4.15 g/mL at 25 °C(lit.)
• Storage Temp.: under inert gas (nitrogen or Argon) at 2–8 °C
• Solubility: Soluble in aromatic solvents.
• Water Solubility: Decomposes in water.
• Sensitive: Moisture Sensitive
• CAS DataBase Reference: GALLIUM(III) IODIDE(CAS DataBase Reference)
• NIST Chemistry Reference: GALLIUM(III) IODIDE(13450-91-4)
• EPA Substance Registry System: GALLIUM(III) IODIDE(13450-91-4)

Safety Data

• Hazard Codes: C
• Statements: 34-42/43-63
• Safety Statements: 22-26-27-36/37/39-45
• RIDADR: UN 3260 8/PG 2
• WGK Germany: 3
• TSCA: Yes
• HazardClass: 8
• PackingGroup: II
• Hazardous Substances Data: 13450-91-4(Hazardous Substances Data)

Usage

Chemical Properties

-20 mesh with 99.999% purity; monoclinic; enthalpy of vaporization 56.5 kJ/mol; enthalpy of fusion 16.30kJ/mol; can be prepared by direct reaction of Ga and I2 [CRC10] [CER91] [KIR78]

Uses

Gallium(III) iodide is widely used as lewis acid, a precursor of organogallium reagents. It can also be involved in detection of solar neutrinos.

InChI:InChI=1/Ga.3HI/h;3*1H/q+3;;;/p-3

Upstream product

• 7440-55-3 gallium 
• 7553-56-2 iodine 
• 13450-90-3 Gallium trichloride 
• 12185-17-0 selenium dimer 

Downstream Products

• 104646-93-7 GaI₃(As(C₆H₅)3) 
• 203912-00-9 [(1,2-bis(diphenylphosphanyl)benzene)GaI₂](GaI₄) 
• 203912-02-1 [(bis((2-diphenylphosphanyl)phenyl)phenylphosphane)GaI₂](GaI₄) 
• 17764-59-9 gallium(III) iodide, triphenylphosphine adduct 
• 949094-32-0 [GaI3(μ-Ph2As(CH2)2AsPh2)GaI3] 
• 953794-83-7 (GaI3)2(μ-o-C6H4(CH2PPh2)2 
• 1199269-74-3 C₆H₁₁PCl₃⁽¹⁺⁾*GaCl₄^(1-)=C₆H₁₁PCl₃GaCl₄ 
• 190129-40-9 Ga₂I₆ * 1,2-bis(diphenylphosphino)ethane 
• 219673-98-0 (C₆H₄)(P(C₆H₅)2)2H⁽¹⁺⁾*GaI₄^(1-) = [(C₆H₄)(P(C₆H₅)2)2H](GaI₄) 
• 175975-51-6 (C₆H₂(C₄H₉)3)2GaI 
• 175975-50-5 C₆H₂(C₄H₉)3GaI₂ 
• 10377-51-2 lithium iodide 

Relevant articles and documents

Electrical properties of GaSe prepared by an indirect gas-phase method

An indirect method has been developed for the synthesis of GaSe. Single crystals have been obtained from the gas phase, and some their electrical properties have been investigated.

Design of p-T-x diagrams for gallium chalcogenides with the use of an ancillary component

A new null-gage method has been developed to study p-T-x diagrams of binary systems with low-fugacity compounds. This method consists of measuring the equilibrium vapor pressure, created by the selective interaction of a third (ancillary) component with one of the components of a test sample, as a function of temperature. Iodine and chlorine (in the form of GaHaI3) were used to study Ga-Se and Ga-S phase diagrams. At temperatures up to about -1080 K, the GaSe homogeneity range is 0.12 ± 0.04 mol % and is displaced to gallium. Gallium monosulfide has a narrower homogeneity range comparable to the error in composition determination (0.04 mol %). The Ke values have been calculated as a function of temperature for heterogeneous equilibria of condensed gallium chalcogenides and gallium halides, as well as the partial gallium vapor pressure of solid gallium selenides and gallium sulfides. For the equilibrium of GaSe, Ga2Se3, and vapor, the gallium partial pressure has been shown to be independent of an ancillary component. The results have been used to calculate the thermodynamic parameters for gallium chalcogenides.

Nonstoichiometric Phases with Low Volatility. Homogeneity Area in the Ga-Se System

A new approach to the phase nonstoichiometry and microphase diagrams of binary systems with nonvolatile compounds based on addition of a third volatile component was developed. The feasibility of this approach was demonstrated by the example of nonstoichiometry in the Ga-Se system using gallium triiodide as the third component. The homogeneity area in this system has nearly ≈0.2 at % width and is shifted to the cation-excess range.