14515-39-0

Basic information

• Product Name: Hexafluorodisiloxane
• Synonyms: Hexafluorodisiloxane
• CAS NO: 14515-39-0
• Molecular Formula: F₆OSi₂
• Molecular Weight: 186.1608192
• Mol File: 14515-39-0.mol
• Article Data: 3

Chemical Properties

• Appearance: /
• Density: 1.338g/cm³
• Refractive Index: 1.253
• CAS DataBase Reference: Hexafluorodisiloxane(CAS DataBase Reference)
• NIST Chemistry Reference: Hexafluorodisiloxane(14515-39-0)
• EPA Substance Registry System: Hexafluorodisiloxane(14515-39-0)

Safety Data

• Hazardous Substances Data: 14515-39-0(Hazardous Substances Data)

Usage

InChI:InChI=1/F6OSi2/c1-8(2,3)7-9(4,5)6

Upstream product

• 7783-56-4 antimony(III) fluoride 
• 14986-21-1 hexachlorodisiloxane 
• 16865-60-4 trifluoro-iodo-silane 
• 41066-09-5 hexafluorodisilthiane 
• 7783-06-4 hydrogen sulfide 
• 10035-10-6 hydrogen bromide 
• 7664-39-3 hydrogen fluoride 
• 7440-21-3 silicon 
• 421-24-9 vinyltrifluorosilane 
• 75-71-8 Dichlorodifluoromethane 
• 13465-71-9 trifluorosilane 
• 7704-34-9 sulfur 

Downstream Products

• 112926-00-8 silica gel 
• 107-46-0 disiloxane 
• 24797-04-4 Si₂OH₅F 
• 7440-21-3 monosilane 
• 13775-07-0 β-uranium(V) fluoride 
• 13536-84-0 uranyl fluoride 
• 13775-07-0 uranium pentafluoride 
• 7783-61-1 silicon tetrafluoride 

Relevant articles and documents

Etching silicon with HF-HNO3-H2SO4/H 2O mixtures- unprecedented formation of trifluorosilane, hexafluorodisiloxane, and Si-F surface groups

The etching behaviour of sulfuric-acid-containing HF-HNO3 solutions towards crystalline silicon surfaces has been studied over a wide range of H2SO4 concentrations. For mixtures with low sulfuric acid concentration, NO2/N2O4, N 2O3, NO and N2O have been detected by means of FTIR spectroscopy. Increasing concentrations of nitric acid lead to high etching rates and to an enhanced formation of NO2/N2O 4. Different products were observed for the etching of silicon with sulfuric-acid-rich mixtures [c(H2SO4) > 13 mol L -1]. Trifluorosilane and hexafluorodisiloxane were identified by FTIR spectroscopy as additional reaction products. In contrast to the commonly accepted wet chemical etching mechanism, the formation of trifluorosilane is not accompanied by the formation of molecular hydrogen (according to Raman spectroscopy). Thermodynamic calculations and direct reactions of F 3SiH with the etching solution support an intermediate oxidation of trifluorosilane and the formation of hexafluorodisiloxane. The etched silicon surfaces were investigated by diffuse reflection FTIR and X-ray photoelectron spectroscopy (XPS). Surprisingly, no SiH terminations were observed after etching in sulfuric-acid-rich mixtures. Instead, a fluorine-terminated surface was found.

F3SiSH and (F3Si)2S: Conflicting observations resolved by unambiguous syntheses

The reaction between liquid F3SiI and red HgS mainly yields the disilylsulfane (F3Si)2S and, in smaller amounts, hitherto unknown (F3SiS)2SiF2. These fluorosilylsulfanes have different thermal stabilities. (F3Si)2S is a versatile precursor for F3Si derivatives, and at ambient temperature it is stable, while (F3SiS)2SiF2 decomposes rapidly. F3SiSH has been obtained, along with F3SiBr, by selective cleavage of one of the Si-S bonds in (F3Si)2S with HBr in the liquid phase and was for the first time unambiguously characterized. Contrary to previous reports, (F3Si)2O rather than (F2SiS)2 is formed when SiF4 is passed over SiS2 at 1298 K in a quartz tube. Raman and infrared spectra of (F3Si)2S, F3SiSH and its deuterated derivative F3SiSD have been measured and assigned to vibrational fundamentals. Multinuclear NMR spectra have been recorded. Wiley-VCH Verlag GmbH, 2001.