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13465-71-9

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13465-71-9 Usage

Chemical Properties

colorless gas; enthalpy of vaporization 16.1kJ/mol; entropy of vaporization 87.9kJ/(mol·K) [CIC73] [CRC10]

Check Digit Verification of cas no

The CAS Registry Mumber 13465-71-9 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,3,4,6 and 5 respectively; the second part has 2 digits, 7 and 1 respectively.
Calculate Digit Verification of CAS Registry Number 13465-71:
(7*1)+(6*3)+(5*4)+(4*6)+(3*5)+(2*7)+(1*1)=99
99 % 10 = 9
So 13465-71-9 is a valid CAS Registry Number.
InChI:InChI=1/F3HSi/c1-4(2)3/h4H

13465-71-9SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 18, 2017

Revision Date: Aug 18, 2017

1.Identification

1.1 GHS Product identifier

Product name TRIFLUOROSILANE

1.2 Other means of identification

Product number -
Other names Trifluorosilaneintetrafluorosilane

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:13465-71-9 SDS

13465-71-9Related news

TRIFLUOROSILANE (cas 13465-71-9) induced structural transitions in beta-lactoglobulin in sol and gel08/06/2019

Fluoroalcohols such as 1,1,1,3,3,3-hexafluoro-2-propanol (HFIP) are strong inducers of protein secondary structure. Here, hydrolyzed (3,3,3-trifluoropropyl)trimethoxysilane (3F) is demonstrated to exhibit greater protein conformation inducing activity than HFIP, which is preserved when 3F is cop...detailed

13465-71-9Relevant articles and documents

Etching silicon with HF-HNO3-H2SO4/H 2O mixtures- unprecedented formation of trifluorosilane, hexafluorodisiloxane, and Si-F surface groups

Lippold, Marcus,Boehme, Uwe,Gondek, Christoph,Kronstein, Martin,Patzig-Klein, Sebastian,Weser, Martin,Kroke, Edwin

, p. 5714 - 5721 (2013/02/25)

The etching behaviour of sulfuric-acid-containing HF-HNO3 solutions towards crystalline silicon surfaces has been studied over a wide range of H2SO4 concentrations. For mixtures with low sulfuric acid concentration, NO2/N2O4, N 2O3, NO and N2O have been detected by means of FTIR spectroscopy. Increasing concentrations of nitric acid lead to high etching rates and to an enhanced formation of NO2/N2O 4. Different products were observed for the etching of silicon with sulfuric-acid-rich mixtures [c(H2SO4) > 13 mol L -1]. Trifluorosilane and hexafluorodisiloxane were identified by FTIR spectroscopy as additional reaction products. In contrast to the commonly accepted wet chemical etching mechanism, the formation of trifluorosilane is not accompanied by the formation of molecular hydrogen (according to Raman spectroscopy). Thermodynamic calculations and direct reactions of F 3SiH with the etching solution support an intermediate oxidation of trifluorosilane and the formation of hexafluorodisiloxane. The etched silicon surfaces were investigated by diffuse reflection FTIR and X-ray photoelectron spectroscopy (XPS). Surprisingly, no SiH terminations were observed after etching in sulfuric-acid-rich mixtures. Instead, a fluorine-terminated surface was found.

Synthesis and Properties of Trimethyl(trifluorosilyl)stannane

D'Errico, John,Sharp, Kenneth G.

, p. 1879 - 1882 (2007/10/02)

Trimethyltin hydride reacts with SiF3SiF3 or SiF3SiF2H to give the new compound SnMe3(SiF3) in 75-80 percent yield.No reaction was observed between SnMe3H and SiF3SiH3.Hydrogen-deuterium exchange was observed between tin and silicon during the course of deuterium-labelling experiments.Dimethylstannylene (SnMe2) was implicated as an intermediate by trapping experiments in the thermolysis of SnMe3(SiF3).

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