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865-52-1

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865-52-1 Usage

Chemical Properties

clear colorless to slightly yellow liquid

Uses

Different sources of media describe the Uses of 865-52-1 differently. You can refer to the following data:
1. Employed as a Chemical Vapor Deposition (CVD) precursor to germanium oxide thin films.
2. CVD precursor to germanium oxide thin films.

Check Digit Verification of cas no

The CAS Registry Mumber 865-52-1 includes 6 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 3 digits, 8,6 and 5 respectively; the second part has 2 digits, 5 and 2 respectively.
Calculate Digit Verification of CAS Registry Number 865-52:
(5*8)+(4*6)+(3*5)+(2*5)+(1*2)=91
91 % 10 = 1
So 865-52-1 is a valid CAS Registry Number.
InChI:InChI=1/C4H12Ge/c1-5(2,3)4/h1-4H3

865-52-1 Well-known Company Product Price

  • Brand
  • (Code)Product description
  • CAS number
  • Packaging
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  • Alfa Aesar

  • (A16931)  Tetramethylgermanium, 98%   

  • 865-52-1

  • 5g

  • 581.0CNY

  • Detail
  • Alfa Aesar

  • (A16931)  Tetramethylgermanium, 98%   

  • 865-52-1

  • 25g

  • 2539.0CNY

  • Detail
  • Aldrich

  • (396354)  Tetramethylgermanium  98%

  • 865-52-1

  • 396354-5G

  • 1,593.54CNY

  • Detail

865-52-1SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 12, 2017

Revision Date: Aug 12, 2017

1.Identification

1.1 GHS Product identifier

Product name Tetramethylgermanium

1.2 Other means of identification

Product number -
Other names Germane, tetramethyl-

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:865-52-1 SDS

865-52-1Relevant articles and documents

Glockling et al.

, p. 1052 (1968)

-

Lengel,Dibeler

, p. 2683 (1952)

-

Formation of silicon-carbon bonds by photochemical irradiation of (η5-C5H5)Fe(CO)2SiR3 and (η5-C5H5)Fe(CO)2Me to Obtain R3SiMe

Fortier, Skye,Zhang, Yongqiang,Sharma, Hemant K.,Pannell, Keith H.

, p. 1041 - 1044 (2010/04/25)

Photochemical irradiation of an equimolar mixture of (η5 -C5H5)Fe(CO)2SiR3, FpSiR 3, and FpMe leads to the efficient formation of the silicon-carbon-coupled product R3SiMe, R3 = Me 3, Me2Ph, MePh2, Ph3, ClMe 2, Cl2Me, Cl3, Me2Ar (Ar = C 6H4-p-X, X = F, OMe, CF3, NMe2). Similar chemistry occurs with related germyl and stannyl complexes at slower rates, Si > Ge Sn. Substitution of an aryl hydrogen to form FpSiMe2C6H4-p-X has little effect on the rate of the reaction, whereas progressive substitution of methyl groups on silicon by Cl slows the process. Also, changing FpMe to FpCH2SiMe3 dramatically slows the reaction as does the use of (η5-C 5Me5)Fe(CO)2 derivatives. A mechanism involving the initial formation of the 16e intermediate (η5-C 5H5)Fe(CO)Me followed by oxidative addition of the Fe-Si bond accounts for the experimental results obtained.

Process for the preparation of group IVA and group VIA compounds

-

Page 11-12, (2008/06/13)

Methods of preparing Group IVA and Group VIA organometallic compounds, particularly Group IVA organometallic compounds, are provided. Such manufacturing methods employ an amine and/or phosphine catalyst in a transalkylation step and may be performed in a batch, semi-continuous or continuous manner.

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