Effect of the deposition rate on the phase transition in SILVER TELLURIDE (cas 12002-99-2) thin films

Add time:07/22/2019    Source:sciencedirect.com

SILVER TELLURIDE (cas 12002-99-2) thin films of thickness 50 nm have been deposited at different deposition rates on glass substrates at room temperature and at a pressure of 2×10−5 mbar. The electrical resistivity was measured in the temperature range 300–430 K. The temperature dependence of the electrical resistance of Ag2Te thin films shows structural phase transition and coexistence of low temperature monoclinic phase and high temperature cubic phase. The effect of deposition rate on the phase transition and the electrical resistivity of silver telluride thin films in relation to carrier concentration and mobility are discussed.

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