Pulse electrodeposited copper indium sulpho selenide films and their properties
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Add time:07/29/2019 Source:sciencedirect.com
Copper indium sulpho selenide films of different composition were deposited by the pulse plating technique at 50% duty cycle (15 s ON and 15 s OFF). X-ray diffraction studies indicated the formation of single phase chalcopyrite copper indium sulpho selenide films. Transmission Electron Microscope studies indicated that the grain size increased from 10 nm–40 nm as the selenium content increased. The band gap of the films was in the range of 0.95 eV–1.44 eV. Room temperature resistivity of the films is in the range of 16.0 Ω cm–33.0 Ω cm. Films of different composition used in photoelectrochemical cells have exhibited photo output. Films of composition, CuInS0.9Se0.1 have exhibited maximum output, a VOC of 0.74 V, JSC of 18.50 mA cm−2, ff of 0.75 and efficiency of 11.40% for 60 mW cm−2 illumination.
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