Sputtering deposition and characterization of Zirconium nitride (cas 12033-93-1) and oxynitride films

Add time:07/31/2019    Source:sciencedirect.com

The interest about zirconium oxynitrides is growing with the attention for Zirconium nitride (cas 12033-93-1)s phase at high zirconium content. In recent years a great progress has been made to realize both the higher nitride phase (Zr3N4) and the higher oxynitride phase (Zr2ON2) in more ordered crystal structures. In this work the abovementioned two phases are realized by RF magnetron sputtering technique. The characterization results, illustrated in the present paper, push towards the evidence of an evolution from zirconium N-rich nitride to the oxynitride films by introducing a very small percentage (0.5%) of water vapor in a sputtering atmosphere made only of nitrogen gas. In particular, structural analysis identified zirconium N-rich nitride as c-Zr3N4 and zirconium oxynitride as c-Zr2ON2. The formation of zirconium oxynitride is due to oxygen presence, coming from the water dissociation in the plasma. Both phases request an additional energy supplied by substrate bias assistance for c-Zr3N4 and by more energetic particles reflected by the Zr target for c-Zr2ON2.

We also recommend Trading Suppliers and Manufacturers of Zirconium nitride (cas 12033-93-1). Pls Click Website Link as below: cas 12033-93-1 suppliers

Prev:Metal ion release barrier function and biotribological evaluation of a Zirconium nitride (cas 12033-93-1) multilayer coated knee implant under highly demanding activities wear simulation
Next:Comparison of the oxidation behavior of a Zirconium nitride (cas 12033-93-1) coating in water vapor and air at high temperature)