Pulsed laser deposition of pure and praseodymium-doped Ge–Ga–Se amorphous chalcogenide films

Add time:07/31/2019    Source:sciencedirect.com

Pure and praseodymium-doped thin films of Ge30Ga5Se65 amorphous system were prepared by the pulsed laser deposition (PLD) technique. The composition of the prepared films was close to the composition of the used targets of bulk chalcogenide glass. The structure of the prepared films was also close to that of the targets as shown by the Raman spectra. The annealing of films shifted the position of the absorption edge to higher energies, which is explained by chemical homogenization of the films due to interaction of fragments of the evaporated material. Two luminescence bands near 1340 and 1610 nm were observed in the emission spectra of praseodymium-doped Ge–Ga–Se thin films. They were assigned to the radiative transitions between discrete energy levels of Pr3+ ions, 1G4–3H5 and 3F3–3H4, respectively. The luminescence intensity of ablated films was lower than that of bulk glasses. It increased after annealing of the films.

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