The oxidation of TERBIUM SILICIDE (cas 12039-80-4)

Add time:07/27/2019    Source:sciencedirect.com

TbSi1.7 was grown on Si(100) and on amorphous Si. After these samples were oxidized at 450°C for 90 min, 600°C for 30 min and 800°C for 30 min at atmospheric pressure, Auger depth profiles for all the samples were measured. These profiles indicate that Tb segregated to the surface. Auger spectra show that Tb and not Si is oxidized. During room temperature oxidation of TbSi1.7 in the vacuum system, the initial oxidation of TbSi1.7 also shows an enrichment of Tb on the surface, and that Tb as well as Si are oxidized.

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