Interface characteristics between TUNGSTEN SILICIDE (cas 12039-88-2) electrodes and thin dielectrics

Add time:08/01/2019    Source:sciencedirect.com

In today’s ULSI technology there is an increasing demand in metal electrodes for storage capacitors and transistors. In this publication we present an investigation of MOS capacitor structures with CVD TUNGSTEN SILICIDE (cas 12039-88-2) (WSix) as metal electrode in conjunction with silicon dioxide (SiO2) and oxidized nitride (NO). Bulk silicon and poly silicon were used as second electrode, respectively. Tungsten silicide has been used both as gate electrode and as bottom electrode. For both cases thermal stability up to 780°C with low leakage current has been shown. Band discontinuities between SiO2 and WSix were estimated from current–voltage measurements.

We also recommend Trading Suppliers and Manufacturers of TUNGSTEN SILICIDE (cas 12039-88-2). Pls Click Website Link as below: cas 12039-88-2 suppliers

Prev:Formation of TUNGSTEN SILICIDE (cas 12039-88-2) films by ion beam synthesis
Next:Diffusion in TUNGSTEN SILICIDE (cas 12039-88-2)s)