The behaviour of hydrogen, nitrogen and oxygen impurities in boron carbide and aluminium dodecaboride
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Add time:07/29/2019 Source:sciencedirect.com
Some peculiarities in the behaviour of hydrogen, nitrogen and oxygen impurities in ceramic samples of boron carbide and aluminium dodecaboride with semiconductor features have been studied. The relationship between the gas content in the items produced by hot compaction and sintering, and their density and thermal and electric conductivity is determined. The conditions are described under which vacuum annealing provides a sufficient reduction of gaseous impurities.
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