Preparation and properties of aluminum diboride single crystals

Add time:07/30/2019    Source:sciencedirect.com

Single crystal platelets of AlB2 have been prepared by (1) an extremely rapid aluminothermic reaction between B2O3 and excess Al at temperatures reaching more than 1500 °C and (2) a slow reaction between elemental B and excess Al at 975 °C. The crystals prepared by the second method are typically 6–8 mm on a side and 5–10 μm thick. AlB2 was the only boride phase detected, indicating that this compound is stable to at least 1550 °C in the presence of excess Al. Electrical measurements on single crystals indicate that AlB2 exhibits metallic conduction. The room temperature resistivity values are between 3.1 × 10-5 and 7.7 × 10-5 ohm-cm. The charge carrier concentrations determined by Hall effect measurements range between 6 × 1021 and 4 × 1022/cm3 and indicate p-type conductivity. In measurements parallel and perpendicular to the basal plane, superconductivity was not observed down to 1.5 K.

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