Low-energy mass-selected ion beam production of fragments from tetraethylorthosilicate for the formation of Silicon dioxide (cas 112945-52-5) film
-
Add time:08/03/2019 Source:sciencedirect.com
Fragment ions produced from tetraethylorthosilicate (TEOS) in a Freeman-type ion source were investigated using a low-energy mass-selected ion beam system and then, their mass numbers were identified. Although the chemical formulae of these fragments were not completely identified yet, the possible candidates of dominant fragment ions were C2+, C+, CH2+, O+, H2O+, Si+, SiC+, SiO+, SiH(OH)2+, Si(OH)3+, SiH(OH)(OC2H5)+, SiH(OCH3)2+, Si(OH)2(OC2H5)+, SiH(OC2H5)2+, Si(OH)(OC2H5)2+, Si(OCH3)2(OC2H5)+, Si(OCH3)(OC2H5)2+, and Si(OC2H5)3+. Among these fragment ions, Si(OH)3+ ions were mass-selected. The ion energy was approximately 50 eV. Then, the Si(OH)3+ ions were irradiated to a Si substrate and resulting deposited films were analyzed. Following the completion of the ion irradiation experiment, X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy assays of the films demonstrated the occurrence of Silicon dioxide (cas 112945-52-5) deposition. We conclude that the irradiation of the mass-selected Si(OH)3+ ions, obtained from TEOS, to substrates is useful for the secure growth of silicon dioxide films.
We also recommend Trading Suppliers and Manufacturers of Silicon dioxide (cas 112945-52-5). Pls Click Website Link as below: cas 112945-52-5 suppliers
Prev:Thick PECVD Silicon dioxide (cas 112945-52-5) films for MEMS devices
Next:Copper-Silicon dioxide (cas 112945-52-5) nanocomposites: Structure and electron transport) - 【Back】【Close 】【Print】【Add to favorite 】
- Related Information
- Robust Silicon dioxide (cas 112945-52-5) @ epoxy resin micronanosheet superhydrophobic omnipotent protective coating for applications08/05/2019
- Copper-Silicon dioxide (cas 112945-52-5) nanocomposites: Structure and electron transport08/04/2019
- Thick PECVD Silicon dioxide (cas 112945-52-5) films for MEMS devices08/02/2019
- Elongation of metallic nanoparticles at the interface of Silicon dioxide (cas 112945-52-5) and silicon nitride08/01/2019
- Effect of Silicon dioxide (cas 112945-52-5) substrate on buckling behavior of Zinc Oxide nanotubes via size-dependent continuum theories07/31/2019
- Direct synthesis of bilayer graphene on Silicon dioxide (cas 112945-52-5) substrates07/30/2019
- Effect of helium ion beam treatment on wet etching of Silicon dioxide (cas 112945-52-5)07/29/2019
- Synthesis of carbon quantum dots from lac dye for Silicon dioxide (cas 112945-52-5) imaging and highly sensitive ethanol detecting07/28/2019
- Research on the alkali-digestion properties of alumina and Silicon dioxide (cas 112945-52-5) during phase transformation roasting process07/27/2019
-
Health and Chemical more >