Indium antimonide transistors

Add time:07/29/2019    Source:sciencedirect.com

The design, fabrication, and electrical characteristics of an n-p-n indium antimonide transistor which operates at 77°K are discussed. An analysis of the expected high-frequency performance is presented and a comparison made to a p-n-p germanium transistor. Because of its high electron mobility, the indium antimonide transistor should have a base transit time 126 that of a similar germanium transistor. Although these ultimate capabilities have not been approached, transistors with ft as high as 300 Mc/s and β's of 500 have been observed. Switching speeds approaching those of the best state-of-the-art germanium transistors have been measured.

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