Surface morphology of YTTRIUM SILICIDE (cas 12067-55-9)s epitaxially grown on Si(1 1 1) by STM

Add time:08/04/2019    Source:sciencedirect.com

We have studied by means of scanning tunneling microscopy and low energy electron diffraction techniques the surface morphology of very thin layers of yttrium silicide epitaxially grown on a Si(1 1 1) substrate. For an Y coverage of 1 ML a two-dimensional p(1×1) silicide layer is formed. The surface morphology of this phase presents characteristic triangular holes with a typical lateral size of 20 Å and oriented as the faulted half unit cell of the 7×7 reconstruction. Further Y coverage leads to the formation of a three-dimensional (3D) (√3×√3)R30° YSi1.7 film. In particular, for a coverage of 3 ML, a 3D YSi1.7 film grows, covering the whole surface. The topography of this phase is characterized by defects consisting of round shaped holes.

We also recommend Trading Suppliers and Manufacturers of YTTRIUM SILICIDE (cas 12067-55-9). Pls Click Website Link as below: cas 12067-55-9 suppliers

Prev:Ion beam synthesis and characterization of YTTRIUM SILICIDE (cas 12067-55-9) in Si(111)
Next:Hexagonal approximants of a dodecagonal TANTALUM TELLURIDE (cas 12067-66-2) — the crystal structure of Ta21Te13)