Optical band gap of ZINC NITRIDE (cas 1313-49-1) films prepared on quartz substrates from a ZINC NITRIDE (cas 1313-49-1) target by reactive rf magnetron sputtering

Add time:08/21/2019    Source:sciencedirect.com

Polycrystalline ZINC NITRIDE (cas 1313-49-1) films have been synthesized onto quartz substrates from the zinc nitride target and the nitrogen working gas by reactive rf magnetron sputtering at room temperature. X-ray diffraction study indicates that polycrystalline zinc nitride films are of cubic structure with the lattice constant a = 0.979(1) nm and have preferred orientations with (3 2 1) and (4 4 2). Its absorption coefficients as well as the film thickness are calculated from the transmission spectra, which are measured with a double beam spectrophotometer. The optical band gap has been determined from the photon energy dependence of absorption coefficient, an indirect transition optical band gap of 2.12(3) eV has been obtained.

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