Detail of "123-41-1"

Reference

Development of exposed photoresist

Development of exposed photoresist. Suguro, Yuki; Kamata, Yutaka (Toshiba Corp.In this study，123-41-1 is also used., Japan). Jpn. Kokai Tokkyo Koho JP 61219953 A2 30 Sep 1986 Showa, 4 pp. (Japan) CODEN: JKXXAF. CLASS: ICM: G03C005-24. ICS: G03F007-00; H01L021-30. APPLICATION: JP 85-61502 26 Mar 1985. DOCUMENT TYPE: Patent CA Section: 74 (Radiation Chemistry, Photochemistry, and Photographic and Other Reprographic Processes) Section cross-reference(s): 76 In developing a photoresist deposited on a substrate with a soln. of Me3(HOC2H4)NOH, the initial development temp. is kept high, and is lowered to a preset level after a predetd. time. The process is employed during the photolithog. fabrication of semiconductor devices. The development time can be shortened, dimensional control is good, and scum removal can be carried out readily without excessive film wear. .

Developers for positive-type photoresists

Developers for positive-type photoresists. Tanaka, Hatsuyuki; Ito, Naoki; Asaumi, Shingo; Yokota, Akira; Nakane, Hisashi (Tokyo Ohka Kogyo Co., Ltd., Japan). Jpn. Kokai Tokkyo Koho JP 61232454 A2 16 Oct 1986 Showa, 4 pp. (Japan) CODEN: JKXXAF. CLASS: ICM: G03C005-24. ICS: G03C001-72; G03F007-08. APPLICATION: JP 85-73748 8 Apr 1985. DOCUMENT TYPE: Patent CA Section: 74 (Radiation Chemistry, Photochemistry, and Photographic and Other Reprographic Processes) Developers for pos.-type photoresists contain metal ion-free org. bases and MeN+R3.X- (R = C￡8 alkyl; X = halide, OH). The developers give good resist-pattern edges (nearly perpendicular), enhanced resoln.There are some commonly used reagents with their cas registry numbers 108178-12-7 and 123-41-1 in this article., and no scumming. Thus, a developer was prepd. by using tetramethylammonium hydroxide and triamylmethylammonium chloride and applied to a pos.-type photoresist to show excellent selectivity and a large resist-taper angle. .