Tin trifluoroacetylacetonate [Sn(C5H4O2F3)2] as a precursor of tin dioxide in APCVD process

Article abstract of DOI:10.1134/S003602361605017X

A new method of synthesis of volatile complex, tin trifluoroacetylacetonate [Sn(C₅H₄O₂F₃)₂], was proposed. The prepared compound was identified by IR spectroscopy, CH analysis, X-ray powder diffraction, and DTA/TGA, the composition was confirmed by MALDI-TOF mass spectrometry, crystal structure was established. Thin films of tin dioxide on silicon were obtained by atmospheric pressure chemical vapor deposition using [Sn(C₅H₄O₂F₃)₂] as a precursor. The morphology and composition of the films were studied by scanning electron microscopy, EDX elemental analysis, and X-ray powder diffraction. Surface resistance and light transmission in visible and near IR region were studied.

Full text of DOI:10.1134/S003602361605017X

ISSN 0036-0236, Russian Journal of Inorganic Chemistry, 2016, Vol. 61, No. 5, pp. 545–553. © Pleiades Publishing, Ltd., 2016.
Original Russian Text © V.S. Popov, P.A. Ignatov, A.V. Churakov, E.P. Simonenko, N.P. Simonenko, N.N. Ignatova, V.G. Sevast’yanov, N.T. Kuznetsov, 2016, published in Zhurnal
Neorganicheskoi Khimii, 2016, Vol. 61, No. 5, pp. 572–580.
SYNTHESIS AND PROPERTIES
OF INORGANIC COMPOUNDS
Tin Trifluoroacetylacetonate [Sn(C5H4O2F3)2]
as a Precursor of Tin Dioxide in APCVD Process
V. S. Popova, P. A. Ignatova, A. V. Churakova, E. P. Simonenkoa, b, N. P. Simonenkoa, b,
N. N. Ignatovac, V. G. Sevast’yanova, and N. T. Kuznetsova
aKurnakov Institute of General and Inorganic Chemistry,
Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991 Russia
bMoscow Institute of Physics and Technology (State University),
9 Institutskiy per., Dolgoprudny, Moscow Region, 141700 Russia
cMoscow State Technical University of Radioengeneering, Electronics, and Automation,
pr. Vernadskogo 78, Moscow, 119454 Russia
e-mail: v_sevastyanov@mail.ru
Received November 2, 2015
Abstract―A new method of synthesis of volatile complex, tin trifluoroacetylacetonate [Sn(C5H4O2F3)2], was
proposed. The prepared compound was identified by IR spectroscopy, CH analysis, X-ray powder diffrac-
tion, and DTA/TGA, the composition was confirmed by MALDI-TOF mass spectrometry, crystal structure
was established. Thin films of tin dioxide on silicon were obtained by atmospheric pressure chemical vapor
deposition using [Sn(C5H4O2F3)2] as a precursor. The morphology and composition of the films were studied
by scanning electron microscopy, EDX elemental analysis, and X-ray powder diffraction. Surface resistance
and light transmission in visible and near IR region were studied.
Keywords: precursor, SnO2, CVD, thin films
DOI: 10.1134/S003602361605017X
Tin dioxide, one of the most required semicon- This compound was obtained in [23, 24] using a com-
ducting materials for gas sensors [1, 2] and solar cell plicated procedure based on alkoxides and substituted
technology, is widely used as a transparent conducting cyclopentadienyl tins, which requires specially prepared
oxide layer [1, 3, 4]. The application of chemical vapor solvents. Using this procedure, [Sn(C5H4O2F3)2] was
deposition approach to the synthesis of tin dioxide at
atmospheric pressure requires a wide series of volatile
stable precursors. As it was shown in a series of works
[5–8], the morphology and properties of coatings
based on tin dioxide produced under identical condi-
tions are dependent on the nature of precursor com-
pound.
synthesized in the work [25], which also reported on
its use as a precursor for preparing SnO2 in O2 flow and
crystal structure of this compound. However, there is
no data in CCDC on the structural characteristics
necessary for the valuable analysis of structural infor-
mation, especially the character of packing in lattice.
Therefore, the aim of this work is to develop a new
Different metal β-diketonates are widely used as simple method for the preparation and isolation of
precursors for the preparation of metallic and oxide [Sn(C5H4O2F3)2] that requires no specially prepared
materials by CVD method [9–17], while the predic-
tion of their volatility is very promising due to analysis
and modeling of their structure [18]. The use of tin(II)
hexafluoroacetylacetonate [Sn(C5HO2F6)2] [19] and
dichloro-bis(2,4-pentadionato)tin(IV) [20–22] as
precursors for the synthesis of tin dioxide by CVD
method is reported in the literature.
solvents and moisture-sensitive initial tin compounds,
to study certain physicochemical properties of
[Sn(C5H4O2F3)2] and its approbation as a precursor
for preparing thin, transparent, and electrically con-
ducting SnO2 films by APCVD method in comparison
with the closest structural analog [Sn(C5HO2F6)2].
It is practically important and urgent task to extend
the scope of stable tin complexes capable of transfer-
ring to gas phase at atmospheric pressure. The analog
of the above mentioned hexafluoroacetylacetonate,
tin(II) trifluoroacetylacetonate, is one of promising
compounds for preparing thin films of SnO2 by atmo-
EXPERIMENTAL
Chemicals used: granulated tin (99.9%, Khimreac-
tiv) was used without additional purification, 1,1,1-tri-
fluoro-2,4-pentanedione
(trifluoroacetylacetone,
spheric pressure chemical vapor deposition (APCVD). 98%, P&M-Invest) was purified by distillation.
545

546
POPOV et al.
3
2
1
4
Ar
MFC
induction furnace
8
9
6
5
7
Fig. 1. Schematic diagram of installation for the deposition of coatings by APCVD method. (1) Quartz reactor, (2) resistive fur-
nace (evaporation furnace), (3) induction furnace (destruction furnace), (4) pyrometer, (5) thermocouple, (6) digital gauge of gas
supply with PC interface, (7) cylinder with carrier gas, (8) support, (9) graphite holder and heater.
Synthesis. Tin (0.40 g, 3.36 mmol) as a metal pow- diffractometer (MoKα radiation, λ = 0.71073 A, graph-
der was dissolved in excess of freshly distilled trifluo-
roacetylacetone (1 mL, 8.24 mmol). The synthesis was
conducted in a flask equipped with a reflux condenser
at ultrasound activation and heating to 50°C. After
1 day, tin metal dissolved and transparent crystals
formed in reactor volume. It was found that the
obtained compound exhibited marked volatility at
atmospheric pressure and was stable in air.
The obtained compound was purified by sublimation
at 30–40°C under reduced pressure (P = 10 1 kPa) to
give transparent crystals of [Sn(C5H4O2F3)2] in the
cold reactor zone.
Chemical vapor deposition of coatings on laboratory
installation (Fig. 1) at atmospheric pressure (APCVD)
was carried out in argon flow (80 mL/min). The tem-
perature in evaporation zone was 75 5°C, decompo-
sition zone temperature was 517 5°C. The subse-
quent annealing of coatings was conducted in air at
700°C for 2 h.
ite monochromator) in ω-scan mode at 130 K.
Absorption corrections were made by measuring
intensities of equivalent reflections. The crystals of
C10H8O4F6Sn are triclinic, FW = 424.85, a =
8.5878(4) Å, b = 10.8501(5) Å, c = 15.6157(7) Å, α =
71.927(1)°, β = 82.026(1)°, γ = 80.914(1)°, V =
1359.65(11) Å3, space group P1, Z = 4, ρcalcd = 2.076
g/cm3, F(000) = 816, μ(MoKα) = 1.962 mm–1, color-
less cubic crystals with dimensions 0.20 × 0.15 × 0.15
mm. For C10H8F6O4Sn, 10263 reflections were mea-
sured (4973 independent reflections, Rint = 0.0269).
The structure was solved by direct methods and
refined by full-matrix anisotropic least squares on F2
for all non-hydrogen atoms (SHELXTL-Plus [26]).
Hydrogen atoms were added in ideal positions using
the Riding model.
The final values R1 = 0.0263, wR2 = 0.0680 for 4145
observed reflections with I > 2σ(I); wR2 = 0.0680 for
all reflections, GOOF = 1.054; 383 refined parame-
ters; Δρmax/min = 1.116/– 0.565 e/Å3.
CH analysis was carried out on a Carlo Erba Instru-
ments EA1100 CHNS-0 elemental analyzer.
IR spectra were recorded on a Lyumeks Infralyum
FT-08 Fourier-transform IR spectrometer (Russia)
(Nujol mull, KBr windows).
X-ray powder diffraction of the precursors was per-
formed on a LOMO DRON-2 device (Huber cham-
ber, Imaging Plate detector, germanium microchro-
mator, CuKα radiation) (USSR).
Mass spectrometry. MALDI-TOF mass spectra
were obtained on a Bruker Daltonics Ultraflex spec-
trometer in positive ions mode using reflecto mode
with voltage on target of 20 mV.
The crystallographic information was deposited in
the Cambridge Crystallographic Data Center: CCDC
950598 www.ccdc.cam.ac.uk/data_request/cif.
DTA/TGA was performed on a TA Instruments
SDT Q600 thermal analyzer (USA) in aluminum cru-
cibles (heating rate 5 K/min, argon carrier gas flow
rate 100 mL/min).
Scanning electron microscopy (SEM) was accom-
plished on a Carl Zeiss NVision 40 three-beam work-
station, elemental composition was determined using
X-ray diffraction study. Experimental data were an EDX Oxford Instruments add-on unit for energy-
collected on a Bruker SMART APEX II automated dispersive analysis.
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TIN TRIFLUOROACETYLACETONATE [Sn(C5H4O2F3)2]
547
4000
3500
3000
2500
2000
1500
1000
500
Wave number, cm–1
Fig. 2. IR spectrum of [Sn(C H O F ) ].
5
4 2 3 2
RESULTS AND DISCUSSION
Study of Prepared Precursor [Sn(C5H4O2F3)2]
tion that allows one to identify molecular ion without
its further defragmentation. The revealed ions were
identified using their isotope distribution. To identify
unknown peak, a group of peaks was selected that
reflects the corresponding isotope distribution. The
theoretical calculation of isotope pattern for ion sup-
posedly corresponding to experimental isotope distri-
bution was conducted with the use of the IsoPro free
software. Table 1 shows the main experimental and
calculated signals. It is seen that the results of
MALDI-TOF agree well with theoretical calculations,
which also confirms the composition of the obtained
compound, [Sn(C5H4O2F3)2].
For C10H8O4F6Sn (FW 426.81) anal. calcd. (%): C,
28.14; H, 1.87. Found (%): C, 27.22; H, 2.01.
The IR spectrum of prepared tin trifluoroacetylac-
etonate (Fig. 2) shows a shift of strong absorption band
ν(CO) to higher wave numbers up to 1620 cm–1 (Δ =
17 cm–1) as compared with the initial ligand, which
indicates the coordination of trifluoroacetylacetonato
groups. The lack of absorption bands in the region
3000–3400 cm–1 corresponding to the stretching
vibrations of OH group implies that anhydrous com-
pound was obtained. Similar behavior was observed
for [Sn(C5HO2F6)2] [19].
The preparative sublimation was found to begin at
30 5°C at 10 1 kPa. Melting point determined in
capillary tube was found to be 40 1°C. According to
DTA data, melting with decomposition is observed at
48 5°C (Fig. 3). DSC experiment revealed melting
enthalpy for the obtained coordination compound to
be 35.35 1.06 kJ/mol, which is higher than that for
[Sn(C5HO2F6)2] (25.29 0.76 kJ/mol).
Colorless crystals of [Sn(C5H4O2F3)2] obtained by
sublimation at 30°C under reduced pressure (10 1 kPa)
were selected for X-ray diffraction study. Molecular
structure of the compound includes two independent
molecules with very close geometrical parameters
(Fig. 5). Coordination polyhedron of tin(II) atom is a
distorted trigonal bipyramid with stereoactive
unshared electron pair located as usual in the equato-
rial position. Both trifluoroacetylacetonate chelating
ligands occupy one axial and one equatorial position
The comparison of X-ray powder diffraction data
for the product immediately after sublimation (Fig. 4)
displays no coincidence with ICCD and CSD data,
which confirms the formation of new rather than pre-
viously described phase.
We used MALDI-TOF (Matrix-assisted, laser
desorption/ionization time-of-flight) mass spectrom-
etry to identify the compound, one of the most
important advance of the method is a “mild” ioniza-
Table 1. The main signals of MALDI-TOF mass spectrum
of [Sn(C5H4O2F3)2]
Calculated
m/z value
Experimental
m/z value
Fragment
[C5H4O2F3]+
[Sn(C5H4O2F3)2]+
153.1
423.9
153.1
423.0
RUSSIAN JOURNAL OF INORGANIC CHEMISTRY Vol. 61 No. 5 2016

548
POPOV et al.
0
120
100
–0.2
–0.4
–0.6
–0.8
–1.0
48.22°C
80
60
40
20
0
51.54°C
68.88°C
71.08°C
[Sn(C5H4O2F3)2]
[Sn(C5HO2F6)2]
100 120
20
40
60
80
Temperature, °C
Fig. 3. DSC/TGA for [Sn(C H O F ) ] and [Sn(C HO F ) ].
5
4
2
3 2
5
2
6 2
I, arb. units
1000
800
600
400
200
0
10
20
30
40
50
2θ, deg
СuKα (1.541874 Å)
Fig. 4. X-ray diffraction pattern of [Sn(C H O F ) ] after sublimation.
5
4 2 3 2
each. The angles at the tin atom between the axial oxy- clic carbon atoms are ~0.04 Å shorter than similar
bonds of equatorial oxygen atoms. In both indepen-
dent molecules, trifluoroacetylacetonate ligands are
flat within 0.14 Å. Tin atoms are ~0.5 Å out of root-
mean-square planes of the ligands. All four CF3
groups are located in proximity to the equatorial plane
gen atoms are ~150°, whereas the angles between the
equatorial substituents are close to 87° (Table 2). As
should be expected, the bonds of the central atom with
the axial atoms are about 0.2 Å longer than with the
equatorial ones. It is interesting to note that the par-
tially double bonds of axial oxygen atoms with endocy- of the central tin atom. As a whole, the geometry of the
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TIN TRIFLUOROACETYLACETONATE [Sn(C5H4O2F3)2]
Table 2. Certain bond distances (Å) and angles (deg) in [Sn(C5H4O2F3)2]
Molecule A
549
Molecule B
Sn(1)–O(11)
Sn(1)–O(21)
Sn(1)–O(12)
Sn(1)–O(22)
O(11)–C(12)
O(21)–C(22)
O(12)–C(14)
O(22)–C(24)
O(11)Sn(1)O(21)
O(11)Sn(1)O(12)
O(21)Sn(1)O(12)
O(11)Sn(1)O(22)
O(21)Sn(1)O(22)
O(12)Sn(1)O(22)
2.140(2)
2.147(2)
2.326(2)
2.330(2)
1.300(4)
1.297(4)
1.249(4)
1.250(4)
86.93(8)
79.27(8)
78.73(8)
79.69(8)
79.08(8)
150.04(8)
Sn(2)–O(31)
Sn(2)–O(41)
Sn(2)–O(42)
Sn(2)–O(32)
O(31)–C(32)
O(41)–C(42)
O(32)–C(34)
O(42)–C(44)
O(31)Sn(2)O(41)
O(31)Sn(2)O(42)
O(41)Sn(2)O(42)
O(31)Sn(2)O(32)
O(41)Sn(2)O(32)
O(42)Sn(2)O(32)
2.144(2)
2.146(2)
2.330(2)
2.331(2)
1.299(3)
1.292(4)
1.255(4)
1.252(4)
86.74(8)
78.93(8)
79.53(8)
79.08(8)
79.44(8)
150.24(8)
compound is close to that previously found for com- of the van der Waals radii of tin and oxygen may be
assessed as 2.2 + 1.5 = 3.7 Å [28]. Thus, the coordina-
tion state of the tin atom can be described as 4 + 2.
Taking into consideration the location of unshared
electron pair, the coordination polyhedron can be
considered as a distorted pentagonal pyramid. As
should be expected, weak Sn···O interactions result
from slightly shortened Sn···Sn intermolecular dis-
tances (4.290 and 4.299 Å). It should be noted that
plexes Sn[F3C–C(O)–CH–C(O)–CF3]2 [19] and
Sn[Ph–C(O)–CH–C(O)–Me]2 [27]. Basically, our
results extend previous data [25] with information on
molecular packing in the crystal.
Tin atoms in the crystal are involved into weak
intermolecular interactions with oxygen atoms of
neighboring molecules (Fig. 6). The Sn···O distances
vary within 3.245–3.310 Å. For comparison, the sum Sn···O intermolecular interactions unite neighboring
F(23)
C(21)
F(21)
C(15)
O(12)
F(22)
O(21)
C(14)
C(22)
C(23)
C(13)
C(12)
Sn(1)
C(24)
O(11)
F(12)
O(22)
C(25)
F(11)
C(11)
F(13)
Fig. 5. Molecular structure of [Sn(C H O F ) ]. Only one crystallographically independent molecule is shown. The arrange-
5
4 2 3 2
ment of disordered trifluoromethyl groups (ellipsoids) is given at the 50% probability level.
RUSSIAN JOURNAL OF INORGANIC CHEMISTRY Vol. 61 No. 5 2016

550
POPOV et al.
c
0
b
Sn(2)
Sn(1)
a
Sn(2A)
Fig. 6. Intermolecular Sn···O interactions of neighboring molecules (shown by dashed lines).
molecules into chains along the а crystallographic axis deposition zone temperature was 517 5°C, deposi-
(Fig. 6). As a result, the same structure is observed in
this case (Fig. 7) as was previously noted for
[Sn(C5HO2F6)2]. In our opinion, this structure can
provide the formation of dimers, including those
existing in gas phase, which can lead to decrease of
sublimation temperature.
tion time was 5 min.
X-ray powder diffraction showed that tetragonal
SnO2 phase forms, space group P4/mnm (ICDD card
041-1445, cassiterite) (Fig. 8). Crystallite dimensions
assessed by the Sherer formula for thin SnO2 film of
deposited using [Sn(C5H4O2F3)2] and [Sn(C5HO2F6)2]
were found to be 15 and 18 nm, respectively. The avail-
able supplementary reflections refer to the supports of
polished silicon that were coated. The authors [25]
note that the deposition of thin films with the use of
[Sn(C5H4O2F3)2] as precursor in argon is accompa-
nied by the formation of tin metal within films, how-
ever, the phase composition of coatings in our studies
was only tin dioxide for both [Sn(C5H4O2F3)2] and
[Sn(C5HO2F6)2].
Chemical Vapor Deposition of SnO2 Coatings
The obtained volatile coordination compound
[Sn(C5H4O2F3)2], like [Sn(C5HO2F6)2], was used as a
precursor for the deposition of thin polycrystalline
SnO2 coatings on a polished support using APCVD
procedure in an argon flow. The parameters of
APCVD process were selected in accordance with the
obtained data on the thermochemical properties of the
compound: evaporation zone temperature was 75 5°C,
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TIN TRIFLUOROACETYLACETONATE [Sn(C5H4O2F3)2]
Table 3. Properties of coatings formed on glass
551
Precursor
Resistance, kOhm/⬜
Transmittance at 550 nm, %
Atom ratio Sn : F
[Sn(C5H4O2F3)2]
[Sn(C5HO2F6)2]
57
63
44.0
74.8
1 : 0.02
1 : 0.09
SEM data indicate that an ierarchcal two-layer similar experiment with [Sn(C5HO2F6)2] (Sn : F = 1 :
microstructure forms on silicon surface for the thin 0.09 at.).
films of SnO2 obtained by the gas-phase thermal
destruction of obtained compound [Sn(C5H4O2F3)2]:
the coating consists of rather large (120–150 nm) coating obtained from [Sn(C5H4O2F3)2], the largest
aggregates of globular shape made of small particles of transmittance (51%) is observed in the long wave-
The obtained coatings are transparent in wave-
length range 400–1100 nm (Fig. 10). For glass with
length region (1100 nm). For the glass with coating
obtained from [Sn(C5HO2F6)2], the largest transmit-
tance (77%) is observed at 610 nm. The transmittance
of the coatings at 550 nm is presented in Table 3.
20–30 nm in diameter (Fig. 9a). In comparison with
coatings obtained from [Sn(C5HO2F6)2] (Fig. 9b), the
aggregates prepared from [Sn(C5H4O2F3)2] are more
porous, while particle size is about half the size.
The surface resistance of the coatings on glass after
annealing is shown in Table 3. It is seen that the
obtained values for different precursors are close: 57
and 63 kOhm/⬜ for tin(II) trifluoro- and hexafluoro-
acetylacetonates, respectively.
Thus, we proposed the new method of synthesis of
volatile complex tin(II) trifluoroacetylacetonate
[Sn(C5H4O2F3)2]. The compound was characterized
by IR spectroscopy, elemental and X-ray powder dif-
fraction analysis, its thermal behavior was studied, the
composition was confirmed by MALDI-TOF mass
spectrometry, the crystal structure was established by
X-ray diffraction study.
The rsults of elemental energodispersive analysis of
coatings after annealing in air (EDX) (Table 3) indi-
cate rather high content of fluorine in coating
obtained from [Sn(C5H4O2F3)2] (Sn : F = 1 : 0.02 at.),
which, nonetheless, is lower than it was noted in the
(а)
F
F
F
C
H3C
O
Sn
The experimental thermochemical data (tempera-
tures of preparative sublimation, melting, thermal
destruction) allow one to recommend this readily vol-
F
F
C
F
I
[Sn(C5H4O2F3)2]
[Sn(C5HO2F6)2]
Si
SnO2
(b)
F
F
F
CH3
CH3
O
O
H3C
Sn
O
O
H3C
10
20
30
40
50
60
70
80
2θ, deg
Fig. 8. X-ray diffraction pattern of tin dioxide obtained by
Fig. 7. Packing in [Sn(C H O F ) ] crystal: (a) along the
decomposition of [Sn(С Н О F ) ] and [Sn(С НО F ) ].
5 4 2 3 2 5 2 6 2
5
4
2
3 2
column axis, (b) across the column axis (with slight shift
for clarity).
Tin dioxide reflections with cassiterite structure (ICDD 14-
1445) and silicon support.
RUSSIAN JOURNAL OF INORGANIC CHEMISTRY Vol. 61 No. 5 2016

552
POPOV et al.
200 nm
200 nm
(b)
(a)
Fig. 9. SEM of tin dioxide coatings. Precursors: (a) [Sn(C H O F ) ], (b) [Sn(C HO F ) ].
5
4
2
3 2
5
2 6 2
atile complex as s precursor for the deposition of
nanostructured oxide tin-containing films by gas-
phase methods.
ACKNOWLEDGMENTS
This work was performed under the State Contract to
the Kurnakov Institute of General and Inorganic Chem-
istry, Russian Academy of Sciences, with partial financial
support of the Presidium of the Russian Academy of Sci-
ences (grant no. I10P4, the Program of Basic Research)
and the Ministry of Education and Science of the Rus-
sian Federation (agreement no. 14.584.21.0020, unique
identifier RFMEFI58416X0020).
The application of coordination compound
[Sn(C5H4O2F3)2] and its closest analog [Sn(C5HO2F6)2]
as precursors in APCVD process in inert atmosphere
(argon) was shown to result in formation of thin films
of tin dioxide with cassiterite crystal lattice doped with
fluorine. It was found that morphology, dispersity,
fluorine content, and light transmittance differ con-
siderably for coatings obtained under the same condi-
tions but using different precursors.
REFERENCES
1. M. Batzill and U. Diebold, Progr. Surface Sci. 79, 47
(2005).
2. G. Korotcenkov, Mat. Sci. Eng. B-Solid 139, 1 (2007).
100
3. C. G. Granqvist, Sol. Energ. Mat. Sol. C 91, 1529
(2007).
Glass
80
4. C. Agashe, J. Huepkes, G. Schoepe, and M. Berginski,
Sol. Energ. Mat. Sol. C 93, 1256 (2009).
5. G. Korotcenkov, Mat. Sci. Eng. R 61, 1 (2008).
60
Glass/SnO2 (precursor [Sn(C5HO2F6)2])
6. V. S. Popov, V. G. Sevastynov, and N. T. Kuznetsov,
Proc. IMCS 1322 (2012).
7. A. S. Antsyshkina, G. G. Sadikov, V.G. Sevastyanov,
et al., Russ. J. Inorg. Chem. 56, 530 (2011). doi
10.1134/S0036023611040036
40
Glass/SnO2 (precursor [Sn(C5H4O2F3)2])
20
8. T. T. Stoycheva, S. Vallejos, R. G. Pavelko, et al.,
Chem. Vap. Deposition. 17, 247 (2011).
9. K. L. Choy, Progr. Mater. Sci. 48, 57 (2005).
10. H. O. Pierson, Handbook of Chemical Vapor Deposition
(CVD)—Principles, Technology and Applications, 2nd ed.
(Noyes Publications, New York, 1999).
0
400 500 600 700 800 900 1000 1100
Wavelength, nm
11. M. D. Allendorf, A. M. B. van Mol, Top. Organomet.
Fig. 10. Light transmittance of tin dioxide coatings
obtained on glass.
Chem. 9, 1 (2005).
RUSSIAN JOURNAL OF INORGANIC CHEMISTRY
Vol. 61
No. 5
2016

TIN TRIFLUOROACETYLACETONATE [Sn(C5H4O2F3)2]
553
12. D. V. Sevast’yanov, V. G. Sevastyanov, E. P. Simo- 20. A. I. Ivashchenko, Ia. I. Kerner, G. A. Kiosse, and
nenko, et al., Thermochim. Acta 381, 173 (2002). doi
I. Yu. Maronchuk, Thin Solid Films 303, 292 (1997).
10.1016/S0040-6031(01)00650-5
21. N. N. Talaty, K. Beck, H. Citeau, et al., Z. Anorg. All-
13. V. G. Sevastyanov, E. P. Simonenko, D. V. Seva-
styanov, and N. T. Kuznetsov, Russ. J. Coord. Chem.
30, 755 (2004).
14. M. A. Chistyakov, E. P. Simonenko, V. G. Seva-
styanov, and N. T. Kuznetsov, Russ. J. Coord. Chem.
32, 693 (2006).
gem. Chem. 635, 53 (2009).
22. V. S. Popov, V. G. Sevastynov, and N. T. Kuznetsov,
Compos. Nanostruct. 4, 33 (2012).
23. P. F. R. Ewings, P. G. Harrison, and D. E. Fenton,
J. Chem. Soc., Dalton Trans. (1972–1999) 9, 821 (1975).
15. V. G. Sevast’yanov, M. A. Chistyakov, E. P. Simo-
24. P. F. R. Ewings, D. E. Fenton, and P. G. Harrison,
nenko, et al., Russ. J. Coord. Chem. 34, 157 (2008).
Inorg. Nucl. Chem. Lett. 10, 43 (1974).
16. T. M. Polyanskaya, M. A. Chistyakov, E. P. Simo-
nenko, et al., Inorg. Chim. Acta. 362, 5133 (2009). doi
10.1016/j.ica.2009.09.008
25. K.-M. Chi, C.-C. Lin, Y.-H. Lu, and J.-H. Liao,
J. Chin. Chem. Soc. (Taipei). 47, 425 (2000).
26. G. M. Sheldrick, SHELXL-97. Program for the
Refinement of Crystal Structures (Univ. of Goettingen,
Germany, 1997).
17. V. G. Sevast’yanov, V. A. Kolesnikov, A. V. Desyatov,
and A. V. Kolesnikov, Glass Ceram. 71, 439 (2015). doi
10.1007/s10717-015-9706-6
18. M. A. Chistyakov, E. P. Simonenko, V. A. Blatov, et al.,
Russ. J. Phys. Chem. A 86, 1340 (2012). doi 10.1134/
S0036024412080031
19. V. G. Sevastyanov, E. P. Simonenko, P. A. Ignatov,
et al., Mendeleev Commun. 22, 239 (2012). doi
10.1016/j.mencom.2012.09.003
27. P. F. R. Ewings, P. G. Harrison, and T. J. King,
J. Chem. Soc. Dalton Trans. 14, 1455 (1975).
28. S. S. Batsanov, Russ. J. Inorg. Chem. 36, 1694 (1991).
Translated by I. Kudryavtsev
RUSSIAN JOURNAL OF INORGANIC CHEMISTRY Vol. 61 No. 5 2016