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VAINER et al.
The resolution of the negative electron beam resist supported epoxidized polyphenol was used to develop
was determined by irradiating the resist film in a JEOL a new negative resist for electron beam nanolithogra-
JBX-6300FS electron beam system with exposure phy capable of forming 12 nm node patterns.
energy of 100 keV. The resist had a very high resolu-
tion: patterns with 12 nm-wide isolated lines were
REFERENCES
formed in a 30 nm-thick resist film. The line edge
roughness was 2.8 nm, which is quite acceptable for
the fabrication of some microchips for the 12 nm node
[15]. The resolution and line edge roughness were esti-
mated using a Hitachi S-5500 scanning electron
microscope.
The sensitivity of the resist based on compound VIII
was determined using a JEOL FEI XL30 SFEG elec-
tron beam system equipped with a Raith ELPHY Plus
image generator at an exposure energy of 20 keV.
The resist sensitivity under these conditions was 3 ×
10–6 C/cm2, which complies with the Roadmap
requirements [15]. It is noteworthy that the developed
negative electron beam resist has a plasma resistance
adequate to the modern nanolithography and compa-
rable with that attained in the plasma etching of com-
mercial novolac-based photoresists such as SAL601
(manufactured by Rohm and Haas).
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Translated by Z. Svitanko
etherified with 1-bromomethylcyclohexen-3-one,
and the unsaturated derivative was epoxidized by reac-
tion with tert-butyl hydroperoxide. The tetraindole-
DOKLADY CHEMISTRY
Vol. 480
Part 1
2018