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K.D. Safa et al. / Journal of Organometallic Chemistry 694 (2009) 1907–1911
4.3.2. Typical procedure for the preparation of epoxybis(silanes) (2)
A mixture of vinylbis(silane) 1 (4 g, 9.6 mmol), MCPBA (75% w/
w pure) and CH2Cl2 (150 cm3) was stirred at room temperature for
18 h. The reaction was washed with aq. NaHCO3 (5 Â 80 cm3),
water (80 cm3), brine (80 cm3) and dried (MgSO4). The solvent
was evaporated and the residue was purified by column chroma-
tography (2:3 n-hexane:CH2Cl2) to give a white solid, epoxy-
bis(silane) 2 (Rf = 0.57, m.p. 99–100 °C). FTIR (KBr, cmÀ1): 2957
(CH), 1516–1408 (Ar), 1254 (C–Si), 1177 (C–O), 934 and 844 (C–
Si); 1H NMR (400 MHz, CDCl3): d À0.19 and 0.14 (s, 18 H, SiMe3),
4.10 (s, 2H, HC–O), 7.28 (d, 4H, J = 1.59 Hz, Ar); 13C NMR (CDCl3):
d À3.1 and À1.3 (SiMe3), 54.4 and 6o.4 (C–O), 125.2, 136.4 and
139.4 (Ar); Anal. Calc. for C22H42Si4O2: C, 58.6; H, 9.0. Found: C,
58.5; H, 8.6%.
(CDCl3): d À3.2 (SiMe3), 66.9 (C–Cl), 128.3–137.4 (C@C, Ar); m/z
(EI): 347 (6%, [M+4]+), 345 (18%, [M+2]+), 343 (24%, [M]+), 342
(84%, [MÀ1]+), 183 (11%), 95 (76%), 73 (100%, [SiMe3]+). Anal. Calc.
for C16H24Si2Cl2: C, 55.9; H, 6.9. Found: C, 55.9; H, 6.5%.
6a: (Rf = 0.68 2:3 n-hexane:CH2Cl2, m.p. 116–118 °C), FTIR (KBr,
cmÀ1): 3512 (OH), 3102 (CH vinyl), 3047 (Ar), 2957 (CH), 1645
(C@C), 1609–1411 (Ar), 1250 (C–Si), 1033 (C–O), 927 and 837
(C–Si); 1H NMR (400 MHz, CDCl3): d 0.02, 0.14 and 0.26 (s, 9H,
SiMe3), 2.24 (s, 1H, OH), 5.07 (s, 1H, HC–OH), 6.84 (s, 1H, vinyl),
7.53 (d, 2H, J = 8.37 Hz, Ar), 7.69 (d, 2H, J = 8.36 Hz, Ar); 13C NMR
(CDCl3): d À3.2, À1.0 and À0.8 (SiMe3), 55.8 (C–Cl), 77.8 (C–OH),
126.6–141.0 (C@C, Ar). Anal. Calc. for C19H34Si3Cl2O: C, 52.6; H,
7.2. Found: C, 52.7; H, 6.9%.
4.3.7. Analytical data for 5b, 6b and 7b
4.3.3. Analytical data for previously described mono-substituted
epoxybis(silane) 3
5b: (Rf = 0.93 2:3 n-hexane:CH2Cl2, m.p. 75–77 °C), FTIR (KBr,
cmÀ1): 3084 (CH vinyl), 3025 (Ar), 2957 (CH), 1636–1406 (C@C,
Ar), 1247, 901 and 840 (C–Si); 1H NMR (400 MHz, CDCl3): d 0.28
(s, 18H, SiMe3), 7.20 (s, 2H, vinyl), 7.72 (s, 4H, Ar); 13C NMR
(CDCl3): d À2.8 (SiMe3), 53.8 (C–Br), 127.9–136.7 (C@C, Ar); m/z
(EI): 436 (9%, [M+4]+), 434 (36%, [M+2]+), 433 (9%, [MÀ1]+), 432
(64%, [M]+), 183 (11%), 139 (45%), 73 (100%, [SiMe3]+). Anal. Calc.
for C16H24Si2Br2: C, 44.4; H, 5.5. Found: C, 44.5; H, 5.5%.
6b: (Rf = 0.59 2:3 n-hexane:CH2Cl2, m.p. 94–96 °C), FTIR (KBr,
cmÀ1): 3472 (OH), 3045 (CH vinyl), 3024 (Ar), 2955 (CH), 1628–
1411 (C@C, Ar), 1249 (C–Si), 1032 (C–O), 955 and 837 (C–Si); 1H
NMR (400 MHz, CDCl3): d 0.13, 0.19 and 0.31 (s, 9H, SiMe3), 2.33
(d, 1H, J = 4.77 Hz, OH), 5.15 (d, 1H, J = 4.66 Hz, HC–OH), 7.25–
7.69 (m, 5H, vinyl and Ar); 13C NMR (CDCl3): d À2.8, À0.1 and
0.1 (SiMe3), 53.8 (C–Br), 77.4 (C–OH), 126.7–141.1 (C@C, Ar). Anal.
Calc. for C19H34Si3Br2O: C, 45.0; H, 5.7. Found: C, 44.7; H, 5.4%.
7b: (Rf = 0.17 2:3 n-hexane:CH2Cl2), m.p. 69–70 °C), FTIR (KBr,
cmÀ1): 3524 (OH), 3031 (Ar), 2954 (CH), 1635–1409 (Ar), 1249
(C–Si), 1038 (C–O), 964 and 839 (C–Si); 1H NMR (400 MHz, CDCl3):
d 0.10 and 0.16 (s, 18H, SiMe3), 1.86 (s, 2H, OH), 5.20 (d, 2H,
J = 1.06 Hz, HC–OH), 7.54 (s, 4H, Ar); 13C NMR (CDCl3): d 0.0 and
0.3 (SiMe3), 53.9 (C–Br), 77.4 (C–OH), 126.7–141.2 (Ar). Anal. Calc.
for C22H44Si4Br2O2: C, 43.2; H, 7.2. Found: C, 43.6; H, 7.2%.
Purification by column chromatography (2:3 n-hexane:CH2Cl2)
gave a white solid epoxybis(silane) 3 (Rf = 0.83, m.p.78–79 °C). FTIR
(KBr, cmÀ1): 3032 (CH vinyl), 2959 (C–H), 1617–1402 (C@C, Ar),
1253 (C–Si), 1096 (C–O), 938 and 838 (C–Si); 1H NMR (400 MHz,
CDCl3): d À0.17, À0.01, 0.15 and 0.18(s, 9H, SiMe3), 4.16 (s, 1H,
HC–O), 7.10 (d, 2H, J = 7.98 Hz, Ar), 7.20 (d, 2H, J = 8.09 Hz, Ar),
7.71(s, 1H, vinyl); 13C NMR (CDCl3): d À3.0, À1.2, À0.4 and 1.2
(SiMe3), 54.4 and 60.5 (C–O), 125.1–142.2 (Ar), 145.2 and 153.5
(C@C); Anal. Calc. for C22H24Si4O: C, 58.7; H, 9.4. Found: C, 58.3;
H, 9.0%.
4.3.4. Reaction of epoxybis(silane) 2 with LiAlH4
To 305 mg (8.04 mmol) of LiAlH4 in 50 cm3 of anhydrous ether
cooled in an ice bath was added 400 mg (0.96 mmol) of epoxy-
bis(silane) 2, and the reaction mixture was allowed to warm to
room temperature with stirring for 150 min. The mixture was
cooled in N2/ethyl acetate bath (À78 °C), and cold aqueous NaHCO3
was added dropwise, and was allowed to warm to room tempera-
ture. Ether was added, the layers were separated, and the aqueous
layer was extracted with ether (2 Â 30 cm3). The combined organic
layers were dried (MgSO4) and the solvent was evaporated and the
residue separated by preparative TLC on silica gel (4:1 n-hex-
ane:Et2O) to give 67.5% white solid 4 (Rf = 0.43, m.p. 52–54 °C).
FTIR (KBr, cmÀ1): 3070 (CH vinyl), 3038 (Ar), 2925 (CH), 1647
(C@C), 1601–1405 (Ar), 1246, 987 and 845 (C–Si); 1H NMR
4.3.8. Reaction of eppoxybis(silane) 2 with MeLi/CuI
To a mixture of 1.7 g (17.95 mmol) of CuI in 15 cm3 of anhy-
drous ether at -45 °C was added 17.95 mmol of methyllithium
[1.12 cm3 (17.95 mmol) MeI in 5 cm3 anhydrous ether was added
dropwise into 250 mg (35.9 mmol) Li in 15 cm3 anhydrous ether]
dropwise. The resulting reaction mixture was stirred for 1 h at
À45 °C. Then a solution of 500 mg (1.1 mmol) of epoxybis(silane)
2 in 10 cm3 of anhydrous ether was added dropwise and the result-
ing mixture was stirred [2 h at À45 °C, 23 h (À45 °C ? r.t.)]. Then
50 cm3 of saturated NaHCO3 was poured into the reaction mixture,
the layers were separated, the aqueous layer was extracted three
times with ether, and then the combined organic layers were
washed with saturated NaHCO3 followed by water, dried (MgSO4),
and concentrated. The residue was separated by TLC on silica gel
(n-hexane) to give 69.36% white solid 8 (Rf = 0.39, m.p. 118–
120 °C). FTIR (KBr, cmÀ1): 3065 (CH vinyl), 3021 (Ar), 2954 (CH),
1664 (C@C), 1626–1399 (Ar), 1244, 906 and 837 (C–Si); 1H NMR
(400 MHz, CDCl3): d 0.27 (s, 18H, SiMe3), 7.27 (s, 2H, vinyl), 7.62
(s, 4H, Ar); 13C NMR (CDCl3): d À2.3 (SiMe3), 110.9 (C–I), 127.2–
142.7 (C@C, Ar); m/z (EI): 526 (67%, [M]+), 185 (30%), 73 (100%,
[SiMe3]+). Anal. Calc. for C16H24Si2I2: C, 38.5; H, 6.6. Found: C,
38.1; H, 6.6%.
(400 MHz, CDCl3):
d
À0.15 (s, 18H, SiMe3), 6.47 (d, 2H,
J = 19.13 Hz, vinyl), 6.85 (d, 2H, J = 19.13 Hz, vinyl), 7.39 (s, 4H,
Ar); 13C NMR (CDCl3): d À2.2 (SiMe3), 125.5–142.1 (C@C, Ar); m/z
(EI): 274 (30%, [M]+), 259 (23%, [M–Me]+), 201 (10%, [M–SiMe3]+),
187(70%), 147(30%), 99 (8%, [HC@CHSiMe3]+), 73 (100%, [SiMe3]+).
Anal. Calc. for C16H26Si2: C, 70.0; H, 9.0. Found: C, 69.7; H, 8.7%.
4.3.5. General procedure for the preparation of 5, 6 and 7
A
mixture of epoxybis(silane) 2 (500 mg, 1.1 mmol), HX
(2 mol dmÀ3; 5 cm3) and THF (20 cm3) was stirred at 70 °C. After
14 h the reaction mixture was cooled, Et2O (30 cm3) was then
added and the mixture was washed with saturated aq. Na2CO3
(2 Â 30 cm3), aq. Na2S2O3 (1 mol dmÀ3; 30 cm3), water (30 cm3)
and brine (30 cm3). The organic layer was dried (MgSO4) and evap-
orated to give a residue which was purified by TLC (silica gel) (2:3
n-hexane:CH2Cl2) to give white solids 5 and 6.
(As explained in the text, at room temperature 5, 6 and 7b were
obtained).
4.3.6. Analytical data for 5a and 6a
5a: (Rf = 0.93 2:3 n-hexane:CH2Cl2, m.p.78–80 °C), FTIR (KBr,
cmÀ1): 3130 (CH vinyl), 3087 (Ar), 2956 (CH), 1635–1406 (C@C,
Ar), 1246, 921 and 837 (C–Si); 1H NMR (400 MHz, CDCl3): d 0.27
(s, 18H, SiMe3), 6.84 (s, 2H, vinyl), 7.73 (s, 4H, Ar); 13C NMR
4.3.9. Preparation of acylsilane 10
Concentrated H2SO4 (18 mol dmÀ3; 0.19 cm3, 3.4 mmol) was
added dropwise to
a stirred solution of epoxybis(silane) 2
(400 mg, 0.96 mmol) in MeOH (6 cm3) at 25 °C. After 90 min at re-