16
Y.-G. Han et al. / Journal of Molecular Structure 936 (2009) 15–18
(KBr, cmꢁ1): (C–S) 648 (m). 1H NMR (DMSO-d6, ppm): d 1.01 (s,
m
Table 1
Crystal data and structure refinement for complexes [Et4N][Ga(SC6H4Me-p)4] (1),
[Et4N][In(SC6H4Me-p)4] (2), [Et4N][Ga(SePh)4] (3).
12H, CH3 in Et4N), 2.14 (s, 12H, CH3), 2.93 (t, 8H, CH2 in Et4N),
6.72–7.16 (m, 16H, Ph). MS (FAB): m/z 562 (M+ꢁ[Et4N]). Anal.
Calcd. for C36H48NS4Ga: C, 62.4; H, 6.98; N, 2.02. Found: C, 62.2;
H, 6.94; N, 1.99%.
Complex
1
2
3
Formula
Formula weight
Crystal system
Space group
a (Å)
b (Å)
c (Å)
b (°)
V (Å3)
C36H48NS4Ga
692.71
Monoclinic
Cc
22.5014(4)
10.6150(2)
15.8714(3)
103.614(1)
3684.41(12)
4
C36H48NS4In
737.81
Monoclinic
Cc
22.6647(4)
10.5550(2)
16.0707(3)
103.399(1)
3739.88(12)
4
C32H40NSe4Ga
824.21
Monoclinic
P21/c
12.1527(3)
12.9180(3)
21.4221(4)
93.679(1)
3356.09(11)
4
2.3. Preparation of [Et4N][In(SC6H4Me-p)4] (2)
To a slurry solution of InCl3ꢀ3H2O (138 mg, 0.50 mmol) and
[Et4N]ClꢀxH2O (86 mg, 0.50 mmol) in methanol (15 ml) was added
dropwise NaSC6H4Me-p (292 mg, 2.00 mmol) in 10 ml of methanol
with stirring. The mixture was stirred at room temperature for
15 min, during which time a fine white solid gradually separated
from the solution. The precipitates were collected by suction filtra-
tion and washed twice with 10 ml portions of diethyl ether. White
air-stable solids were obtained and further recrystallized from
DMF/diethyl ether to give colorless block crystals of 2 in three
Z
Dcalcd. g cmꢁ3
Temperature, K
F(0 0 0)
1.249
296(2)
1464
0.998
1.310
296(2)
1536
0.879
1.631
296(2)
1624
5.179
l
(Mo K
a
) mmꢁ1
No. reflections measured
No. unique reflections
No. observed reflections
No. parameters
17534
6078
3471
379
17796
7408
6400
379
33377
7689
5199
344
days. Yield: 283 mg, 78%. IR (KBr, cmꢁ1):
m
(C–S) 641 (m). 1H
NMR (DMSO-d6, ppm): d 1.05 (s, 12H, CH3 in Et4N), 2.12 (s, 12H,
CH3), 2.90 (t, 8H, CH2 in Et4N), 6.71–7.25 (m, 16H, Ph). MS (FAB):
m/z 607 (M+ꢁEt4N]). Anal. Calcd. for C36H48NS4In: C, 58.6; H,
6.56; N, 1.90. Found: C, 58.4; H, 6.52; N, 1.87%.
Rint
0.0428
0.0155
0.0370
R1a, wR2b (I > 2
r
(I))
0.0468, 0.1019
0.0979, 0.1209
1.019
0.0268, 0.0664
0.0335, 0.0703
1.017
0.0292, 0.0663
0.0590, 0.0766
0.941
R1a, wR2b (all data)
GoFc
Flack value
0.00(0)
+0.307, ꢁ0.210
0.00(0)
+0.354, ꢁ0.244
–
Final diff. peaks (e Åꢁ3
)
+0.368, ꢁ0.391
2.4. Preparation of [Et4N][Ga(SeC6H5)4] (3)
P
P
a
R1 = jjF0j ꢁ jFcjj= jF0j;
P
P
2
2 1=2
wR2 = ½ wðjF20j ꢁ jFc2jÞ = wjF20j ꢂ
;
b
c
To a slurry of [Et4N][GaCl4] (171 mg, 0.50 mmol) in methanol
(10 ml) was added dropwise NaSePh (358 mg, 2.00 mmol) (pre-
pared in situ by the reaction of PhSeSePh and NaBH4 in a 1:2 mol
ratio) in 10 ml of methanol with stirring. The mixture was stirred
at room temperature for 30 min. Fine white solids were observed.
The solution was cooled to 0 °C and the precipitates were collected
by filtration and then washed twice with 10 ml portions of diethyl
ether. White air-stable solids were obtained and further recrystal-
lized from DMF/diethyl ether to give colorless block crystals of 3 in
P
2
1=2
GoF = ½ wðjF0j ꢁ jFcjÞ =ðNobs ꢁ NparamÞꢂ
.
reaction of InCl3ꢀ3H2O and NaSC6H4Me-p in the presence of
[Et4N]ClꢀxH2O. The analogous selenolate derivative of gallium
[Et4N][Ga(SePh)4] (3) was prepared from similar reaction of
[Et4N][GaCl4] with four equivalents of NaSePh. White crystalline
thiolate and selenolate complexes [M(SR)4]ꢁ (M = Ga, In) were sta-
ble in both solid-state and solution. Both complexes were soluble
in DMSO and DMF, and slight soluble THF and MeCN, but poorly
soluble in common solvents. The infrared spectra of complexes 1
and 2 display the characteristic C–S stretching vibration of the
coordinated thiolate ligands at 648 and 641 cmꢁ1. The C–Se
stretching vibration at 562 cmꢁ1 in the IR spectrum indicated the
presence of selenolate ligands in complex 3. The 1H NMR spectra
of three complexes display the typical multiple peaks in the ranges
d 6.70–7.40 ppm, which were assigned to the protons of the phenyl
moiety. The molecular ions corresponding to [Ga(SC6H4Me-p)4]ꢁ,
[In(SC6H4Me-p)4]ꢁ and [Ga(SePh)4]ꢁ can be observed at m/z 562,
607 and 694 in the mass spectra of 1, 2 and 3, with their character-
istic isotopic distribution patterns.
a week. Yield: 297 mg, 63%. IR (KBr, cmꢁ1): (C–Se) 562 (m). 1H
m
NMR (DMSO-d6, ppm): d 1.03 (s, 12H, CH3 in Et4N), 2.94 (t, 8H,
CH2 in Et4N), 6.91–7.35 (m, 20H, Ph). MS (FAB): m/z 694
(M+ꢁ[Et4N]). Anal. Calcd. for C32H40NSe4Ga: C, 46.6; H, 4.89; N,
1.70. Found: C, 46.2; H, 4.85; N, 1.66%.
2.5. X-ray crystallographic study
The structures of [Et4N][Ga(SC6H4Me-p)4] (1), [Et4N][In(SC6H4Me-
p)4] (2), and [Et4N][Ga(SePh)4] (3) were determined by the single-
crystal X-ray diffraction technique. Diffraction data were collected
on a Bruker SMART Apex CCD diffractometer with Mo-K
a radiation
(k = 0.71073 Å) at 296 K using an scan mode. The collected frames
x
Crystal structures of 1, 2, and 3 have been determined by X-ray
diffraction study. All crystal structures consist of discrete [Et4N]+
cations and its corresponding complex anions. In all structures,
the [Et4N]+ cations exhibit normal bond distances and angles. The
were processed with the software Saint [16]. The data was corrected
for absorption using the program Sadabs [17]. Structures were solved
byDirectMethodsandrefinedbyfull-matrixleast-squaresonF2 using
the Shelxtl software package [18]. All non-hydrogen atoms were re-
finedanisotropically.The positionsof all hydrogen atoms were gener-
ated geometrically (Csp3–H = 0.96, Csp2–H = 0.93 Å) and included in
the structure factorcalculationswithassignedisotropicdisplacement
parameters but were not refined. The Flack parameter values of 1 and
2 indicate that the correct enantiomorphs have been selected in both
structures. Further details of the data determination, crystal data and
structure refinement parameters are summarized in Table 1.
structures of the anions, [Ga(SC6H4Me-p)4]ꢁ in
1 and [In(-
SC6H4Me-p)4]ꢁ in 2, are shown in Figs. 1 and 2, respectively. The
anions in 1 and 2 have a distorted tetrahedral geometry which
were similar to those the gallium-thiolate anions [i-Pr4N][Ga(SEt)4]
[12], and [Et4N][Ga(SPh)4] [12] and indium-thiolate anions
[Ph4P][In(S-t-Bu)4] [19] and [Me4N][In(SC6H3Me2-2,6)4] [20]. The
Ga–S bond lengths in 1 range from 2.254(2) to 2.291(2) Å (av.
2.273(2) Å), which are in good agreement with those in [(i-
Pr)2NH2][Ga(S-i-Pr)4] (av. 2.2678(6) Å) [13], [i-Pr4N][Ga(SEt)4] (av.
2.264(3) Å) [12], and [Et4N][Ga(SPh)4] (av. 2.257(3) Å) [12]. The
S–Ga–S bond angles in 1 vary from 97.06(7) to 117.31(9)°, which
were expected for distorted tetrahedral coordination environment,
which are comparable to those in [(i-Pr)2NH2][Ga(S-i-Pr)4] (from
97.10(2) to 118.22(2)°) [13] and [Et4N][Ga(S-Ph)4] (from 101.6(1)
to 114.2(1)°) [12]. Similarly, the In –S bond lengths in 2 range from
3. Results and discussion
Treatment of [Et4N][GaCl4] with four equivalents of
NaSC6H4Me-p in methanol afforded the substitution complex
[Et4N][Ga(SC6H4Me-p)4] (1) in a yield of 87%. The indium ana-
logues [Et4N][In(SC6H4Me-p)4] (2) was prepared similarly by the