Journal of the American Chemical Society
COMMUNICATION
displayed the best thermal stability. A top-contact OFET (Figure
S12) was fabricated by vacuum evaporation of P66-1 onto a
silicon substrate modified with hexamethyldisilazane (HMDS).
The resultant thin film of P66-1 had a thickness of ∼50 nm and
served as a p-type semiconductor; Figure 4 shows a transfer plot
for the OFET device under air. The maximum hole mobility was
calculated to be 5.6 ꢁ 10ꢀ5 cm2 Vꢀ1 sꢀ1 (Figure S13). The
carrier mobility could be enhanced by improving the low crystal-
linity of the P66-1 thin film (Figure S14).
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’ ASSOCIATED CONTENT
S
Supporting Information. Experimental details; full char-
b
acterization data for P66-1, P55-1, and P56-1 (1H and 13C NMR
spectra and structural analysis of P56-1); thermal stability test
results for all compounds; TDDFT calculation results for P55-1
and P56-1; simulation of cyclic voltammograms of P66-1 and P55-
1; information on the OFET device based on P66-1; complete
refs 2a and 2c; and crystallographic data (CIF). This material is
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’ AUTHOR INFORMATION
Corresponding Author
’ ACKNOWLEDGMENT
The authors acknowledge Grants-in-Aid from MEXT of Japan
(20245013 and 21108002, Area 2107, Coordination
Programming) and the Global COE Program for Chemistry
Innovation for financial support. The authors are grateful to Dr.
Murata, Dr. Ishii, and Mr. Hirata (Sony Inc.) for assistance with
the fabrication and performance evaluation of the OFET device.
The authors also thank Dr. Kimiko Hasegawa of Rigaku Cor-
poration for technical support in the X-ray crystallographic
analysis. The authors express gratitude to Hamamatsu Photonics
K.K. for the fluorescence lifetime measurements with a Quan-
taurus-Tau fluorospectrometer.
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dx.doi.org/10.1021/ja2054176 |J. Am. Chem. Soc. 2011, 133, 14518–14521