PHENYL(ACYLOXY)FLUOROSILANES C6H5Si(OCOR)nF3–n (n = 1, 2)
2489
at 20°С phenyl(diacyloxy)fluorosilanes were identified.
Trimethylsilyl ester of trifluoroacetic acid does not
acylate phenyl(fluoro)dichlorosilane.
Earlier a reciprocal relationship between the value
of JSiF and electronegativity of the substituent was
suggested [3–4]. However, the values of JSiF in the
series of the obtained compounds do not obey this
relationship since the largest coupling constant is
observed for acyloxyfluorochlorosilanes rather than
diacyloxyfluorosilanes.
In the reactions with trimethyl(pivaloyloxy)silane,
acyloxysilanes C6H5Si(OCOCMe3)F2 and C6H5Si·
(OCOCMe3)FCl are formed only in trace amounts, and
the products of substitution of two chlorine atoms in
PhSiFCl2 were not detected, although pivalic acid is
weaker than acetic acid (pKa 5.05 and 4.75,
respectively). Therefore the rate and the course of the
reaction are affected not only by electronegativity but
also by the volume of substituent R since the values of
Es for R = Me and CMe3 are equal to 0.00 and –1.54,
respectively.
EXPERIMENTAL
1H, 19F, 29Si NMR spectra were recorded on a
Bruker DPX 400 (400 MHz) instrument in CCl4,
internal reference for 1H, 29Si TMS, for 19F CFCl3.
Mixed phenyl(chloro)fluorosilanes C6H5SiClnF3–n
(n = 1–2) were obtained by conproportionation of
PhSiF3 with PhSiСl3 [5]. Trimethylsilyl esters of the
corresponding acids were obtained by the known
procedure [6].
Ph
O
CH3
F
Si
F
O
CH3
CH3
Cl
R
Reaction of phenyl(chloro)difluorosilane with tri-
methylacetoxysilane. The mixture of 1.8 g (0.01 mol)
of phenyl(chloro)difluorosilane and 1.3 g (0.01 mol) of
trimethylacetoxysilane was kept at room temperature
for 15–30 min. The formed trimethylchlorosilane was
distilled off under reduced pressure (10 mm Hg), the
Si
The mechanism of the studied reactions apparently
includes the formation of the transition state in which
the silicon atom is pentacoordinate.
1
residue was analyzed by H, 19F and 29Si NMR
The synthesized phenyl(acyloxy)difluorosilanes
disproportionate after long standing at room tempera-
ture or at heating. The effect of the nature of the alkyl
or haloalkyl substituent R on the rate of this reaction is
negligible. Phenyl(diacyloxy)fluorosilanes are more
stable and only partly disproportionate at the vacuum
distillation.
spectroscopy (see the table).
The reactions of phenyl(chloro)difluorosilane and
phenyl(dichloro)fluorosilane with trimethylsilyl esters
of carboxylic acids Ме3SiOCOR [R = H, CH3, CF3,
CCl3, ClCH2, BrCH2, CH2=CHCH3, CH2=CHPh,
CH(CH3)=CH2, Ph] were performed similarly (see the
table). The obtained compounds are very sensitive to
heating and air moisture.
The structure of all synthesized compounds is proved
by the data of 1H, 13C, 19F, 29Si NMR spectroscopy.
REFERENCES
As in the case of phenyl(alkoxy)fluorosilanes
PhSi(OR)nF3–n [2], the replacement of the fluorine
atoms by acyloxy group [PhSiF2OAc→PhSiF(OAc)2]
also results in some shielding of the silicon atom (by
3–5 ppm) and shielding of the fluorine atom (by
~1 ppm), and to the increase in the coupling constant
(29Si–19F) by 1–11 Hz. These changes of the NMR
parameters are parallel to those caused by the decrease
in the contribution of the intra– and intermolecular
interactions F–Si←O=C in going from difluorides to
monofluorides.
1. Basenko, S.V., Voronkov, M.G., Zelenkov, L.E.,
Albanov, A.I., and Gebel, I.A., Russ. J. Gen. Chem.,
2009, vol. 79, no. 1, p. 161.
2. Voronkov, M.G., Boyarkina, E.V., Gebel, I.A.,
Albanov, A.I., and Basenko, S.V., Russ. J. Gen. Chem.,
2005, vol. 75, no. 12, p. 2018.
3. Hofler, F. and Veigl, W., Angew. Chem. Int. Ed., 1971,
vol. 10, no. 12, p. 919.
4. Hofler, F. and Veigl, W., Angew. Chem., 1971, vol. 83,
no. 23, p. 977.
5. Kuroda, K. and Ishikawa, N., Kogyo Kagaku Zasshi,
1971, vol. 74, no. 10, p. 2132; C. A., 1972, vol. 76,
60125Y.
6. Voronkov, M.G., Basenko, S.V., and Mirskov, R.G.,
Author’s Certificate no. 899563, 1981, Buyll. Izobret.,
1982, no. 3, p. 101.
The replacement of the fluorine atom of phenyl-
(acyloxy)difluorosilane by chlorine atom expectedly
results in strong deshielding of the silicon atom (25–
27 ppm), fluorine atom (11 ppm) and the increase in
the coupling constant 29Si–19F (27–28 Hz).
RUSSIAN JOURNAL OF GENERAL CHEMISTRY Vol. 81 No. 12 2011