2880
Inorg. Chem. 1998, 37, 2880-2887
Luminescent Photofragments of (1,1,1,5,5,5-Hexafluoro-2,4-pentanedionato) Metal
Complexes in the Gas Phase
David S. Talaga, Stephen D. Hanna, and Jeffrey I. Zink*
Department of Chemisty and Biochemistry, University of California, Los Angeles,
Los Angeles, California 90095-1569
ReceiVed October 22, 1997
The luminescence that is observed under gas phase photolytic deposition conditions is studied for Cr(hfac)3,
Ni(hfac)2, and Pt(hfac)2. This luminescence is analyzed under a variety of conditions, including the relatively
high pressures of an evacuated gas cell and the collision-free conditions of a molecular beam. The effects of
inert buffer gas are also studied. Features in these spectra indicate that, in general, multiple photolysis processes
occur. Some simple fragments that are produced from these compounds are identified, including bare metal
atoms (Ni, Cr), metal monofluorides (NiF, CrF), CH (in the case of Ni(hfac)2), and metal carbide from Pt(hfac)2.
It is postulated that the difference in the observed photofragmentation pathway in the case of platinum is due to
σ bonding to the â carbon of the hfac moiety as opposed to the bidentate bonding of the other two metals.
Possible mechanisms are presented. Detailed analysis of the spectra allows characterization of the internal energy
of the platinum carbide photofragment.
Introduction
structures with well-defined physical properties and abrupt
interfaces benefit from the low growth temperatures.22-24
Metal acetylacetonate (2,4-pentanedionate ) acac) complexes
have found utility as CVD precursors25-27 including applications
in metallization for semiconductor interconnects17 and prepara-
tion of metal oxides for high Tc superconducting films.28
Fluorinated acetylacetonate Iigands (1,1,1,5,5,5-hexafluoro-2,4-
pentanedionate ) hfac) increase sample volatility and allow for
more facile transport in the gas phase but may result in fluorine
contamination of the final deposit.29 For example, photolytic
CVD of copper from Cu(hfac)2 shows measurable fluorine
incorporation.30,31 Luminescence spectra were used to identify
the photofragments resulting from photolysis of Cu(hfac)2 in
the gas phase.1 The luminescence from 308 nm excitation of
Cu(hfac)2 under “high pressure” conditions (∼1 bar), “low
pressure” conditions (∼0.1-10 mbar), and collision-free condi-
tions (molecular beam, 10-4 mbar) was studied to provide
Recent studies have shown that luminescence is observed
when metal-containing molecules are irradiated under photo-
chemically driven chemical vapor deposition (CVD) conditions
and that luminescence spectroscopy can be used to identify
photofragments and assist in the elucidation of the photolytic
deposition pathways.1-3 Laser-assisted metal organic CVD
relies on the use of volatile organometallic compounds to deliver
material to a substrate where the compound is photodecomposed
leaving behind the material to be deposited (and possibly
undesired contaminants).2-14 Laser-assisted CVD has the
advantages of spatially selective deposition on the substrate,
selective energy transfer to the deposition precursor, and low
processing temperature.15-21 Efforts to fabricate multilayer
(1) Talaga, D. S.; Zink, J. I. Inorg. Chem. 1996, 35, 5050.
(2) Wexler, D.; Zink, J. I.; Tutt, L. W.; Lunt, S. R. J. Phys. Chem. 1993,
97, 13563.
(3) Cheon, J.; Talaga, D. S.; Zink, J. I. J. Am. Chem. Soc. 1997, 119,
163.
(4) Cheon, J.; Talaga, D. S.; Zink, J. I. Chem. Mater. 1997, 9, 1208.
(5) Cheon, J.; Zink, J. I. J. Am. Chem. Soc. 1997, 119, 3838.
(6) Mogyorosi, P.; Carlsson, J. O.; Moradi, M. Appl. Surf. Sci. 1992, 54,
46.
(18) Lee, E. J. B.; Bitner, T. W.; Ha, J. S.; Shane, M. J.; Sailor, H. J. J.
Am. Chem. Soc. 1996, 118, 5375.
(19) Bhatia, S. K.; Hickman, J. J.; Ligler, F. S. J. Am. Chem. Soc. 1992,
114, 4432.
(20) Dressick, W. J.; Dulcey, C. S.; Georger, J. H.; Calvert, J. M. Chem.
Mater. 1993, 5, 148.
(7) Messelhauser, J.; Flint, E. B.; Suhr, H. Appl. Surf. Sci. 1992, 54,64.
(8) Vogel Koplitz, L.; Shuh, D. K.; Chen, Y. J.; Williams, R. S.; Zink, J.
I. Appl. Phys. Lett. 1988, 53, 1705.
(9) Rand, M. J. J. Electrochem. Soc. 1973, 120, 686.
(10) Cohan, J. S.; Yuan, H.; Williams, R. S.; Zink, J. I. Appl. Phys. Lett.
1992, 60, 1402.
(11) Flint, E. B.; Messelhauser, J.; Suhr, H. Appl. Phys. A 1991, 53, 430.
(12) Kargl, P. B.; Kullmer, R.; Bauerle, D. Appl. Phys. A 1993, 57, 175.
(13) Mogyorosi, P.; Carlsson, J. O. Mater. Res. Soc. Symp. Proc. 1992,
236,123.
(14) (a) Heszler, P.; Carlsson, J. O.; Mogyorosi, P. J. Vac. Sci. Technol. A
1993, 11, 2924. (b) Hester, P.; Mogyorosi, P.; Carlsson, J. O. Appl.
Surf. Sci. 1993, 69, 272. (c) Heszler, P.; Mogyorosi, P.; Carlsson, J.
O. Appl. Surf. Sci. 1993, 69, 376. (d) Heszler, P.; Mogyorosi, P.;
Carlsson, J. O. J. Appl. Phys. 1995, 78, 5277.
(21) Moreau, W. M. Semiconductor Lithography; Principles, Practices,
and Materials; Plenum: New York, 1988.
(22) Kompa, K. L. Angew. Chem., Int. Ed. Engl. 1988, 27, 1314.
(23) Herman, I. P. Chem. ReV. 1989, 89, 1323.
(24) Eden, J. G. Photochemical Vapor Deposition; Wiley: New York, 1992.
(25) Hitchman, M. L.; Jensen, K F. Chemical Vapor Deposition: Principles
and Applications; Academic Press: San Diego, 1993.
(26) Kodas, T. T.; Hampden-Smith, M. J. The Chemistry of Metal CVD;
VCH: Weinheim, 1994.
(27) Kaesz, H. D.; Williams, R. S.; Hicks, R. F.; Zink, J. I.; Chen, Y. J.;
Muller, H. J.; Xue, Z. L.; Xu, D. Q.; Shuh, D. K.; Kim, Y. K. New J.
Chem. 1990, 14, 527.
(28) Schulz, D. L.; Marks, T. J. AdV. Mater. 1994, 6, 719.
(29) Nemoto, M.; Yamanaka, M. J. Mater. Res. 1990, 5, 1.
(30) Jones, C. R.; Houle, F. A.; Kovac, C. A.; Baum, T. H. Appl. Phys.
Lett. 1985, 46, 97.
(31) Houle, F. A.; Wilson, R. J.; Baum, T. H. J. Vac. Sci. Technol. A 1986,
4, 2452.
(15) Avey, A. A.; Hill, R. H. J. Am. Chem. Soc. 1996, 118, 237.
(16) Larciprete, R. Appl. Surf. Sci. 1990, 46, 19.
(17) Doppelt, P.; Baum, T. H. Mater. Res. Soc. Bull. 1994, 19, 41.
S0020-1669(97)01340-2 CCC: $15.00 © 1998 American Chemical Society
Published on Web 06/15/1998