completely removed by rotatory evaporation. The raw product
was purified by column chromatography on silica gel (200–300
mesh) using ethyl acetate as eluent. The final product was
obtained as a light yellow viscous liquid (4.37 g, 60.2%). 1H
NMR (CDCl3, 300 MHz, d): 8.69 (d, J ¼ 13.1 Hz, 2H), 7.90 (t,
J ¼ 7.9 Hz, 2H), 7.79 (d, J ¼ 8.3 Hz, 2H), 7.40 (d, J ¼ 8.2 Hz,
4H), 4.17 (m, 8H), 1.40 (t, J ¼ 6.8 Hz, 12H).
(100 nm) and ITO/Al (100 nm)/CBP or PCBP (50 nm)/
LiF(1 nm)/Al (100 nm), respectively.
Conclusion
In summary, we have illuminated a hole- to electron-dominated
transition in OLEDs by modifying CBP with phosphonate
groups. Such a conversion is then applied to engineer the single-
layer device performance of SHPhDs. Compared with the
prototype CBP, an about 18-folds improvement of the luminous
efficiency is achieved for PCBP. We believe that, phosphonate
will be an appealing substituent to tune the electronic properties
of p-type semiconductors, and this simple design strategy is
extendable to other p-type ones rather than CBP.
Synthesis of PCBP
PCz-Br (0.52 g, 0.88 mmol), PCz-B (0.55 g, 0.86 mmol) and K2CO3
(0.24 g, 1.8 mmol) were dissolved in 8 mL mixed solvent of
ethylene glycol mono methyl and water (Vethylene glycol mono methyl
:
Vwater ¼ 3 : 1). The solution was added Pd(OAc)2 (1.9 mg, 8.7
mmol) and stirred at room temperature for 7 hours. And the color
of the solution finally turned to dark brown. After the solvent
was removed by vacuum distillation, the residue was purified by
column chromatography on silica gel (200–300 mesh) with ethyl
acetate/methanol (15 : 1) as eluent. Final product was obtained
Acknowledgements
The authors are grateful to the 973 Project (2009CB623601 and
2009CB930603), National Natural Science Foundation of China
(nos. 20923003, 21174144 and 50803062), and Science Fund for
Creative Research Groups (no.20921061) for financial support of
this research. B. Chen also thanks Dr B. Zhang, Dr H. Tian and
Prof. Y. Cheng for their help on the device optimization and
crystal analysis, respectively.
1
as white solid (0.53 g, 60.0%). H NMR (DMSO, 300 MHz, d):
8.89 (d, J ¼ 13.7 Hz, 4H), 8.17 (d, J ¼ 8.5 Hz, 4H), 7.91–7,82 (m,
8H), 7.62 (dd, J ¼ 2.9, 8.5 Hz, 4H), 4.15–4.00 (m, 16H), 1.29 (t, J
¼ 7.0 Hz, 24H). 13C NMR (DMSO, 75 MHz, d): 143.67 (JC–P
2.2 Hz), 140.07, 136.20, 130.78 (JC–P ¼ 11.7 Hz), 129.10 (JC–P
¼
¼
85.3 Hz), 126.39 (JC–P ¼ 11.5 Hz), 123.18 (JC–P ¼ 17.5 Hz),
122.07, 119.55, 111.34 (JC–P ¼ 15.8 Hz), 62.44 (JC–P ¼ 5.2 Hz),
17.11 (JC–P ¼ 5.9 Hz). 31P NMR (DMSO, 121 MHz, d): 22.64.
Anal. Calcd for C52H60N2O12P4: C, 60.70; H, 5.88; N, 2.72;
found: C, 60.57; H, 6.01; N, 2.30%. Calcd mass: 1208.3; MALDI-
TOF found (m/z): 1029.3 [M + H+].
References
1 P. L. Burn, S. C. Lo and I. D. W. Samuel, Adv. Mater., 2007, 19,
1675.
2 S.-H. Hwang, C. N. Moorefield and G. R. Newkome, Chem. Soc.
Rev., 2008, 37, 2543.
3 J. Ding, J. Gao, Y. Cheng, Z. Xie, L. Wang, D. Ma, X. Jing and
F. Wang, Adv. Funct. Mater., 2006, 16, 575.
4 Z. M. Hudson, Z. Wang, M. G. Helander, Z.-H. Lu and S. Wang,
Adv. Mater., 2012, 24, 2922.
Device fabrication and characterization
€
5 X. Yang, D. Neher, D. Hertel and T. K. Daubler, Adv. Mater., 2004,
16, 161.
6 H. A. Al-Attar, G. C. Griffiths, T. N. Moore, M. Tavasli, M. A. Fox,
M. R. Bryce and A. P. Monkman, Adv. Funct. Mater., 2011, 21,
2376.
7 M. Zhu, Y. Li, S. Hu, C. G. Li, C. Yang, H. Wu, J. Qin and Y. Cao,
Chem. Commun., 2012, 48, 2695.
8 C. Jiang, W. Yang, J. Peng, S. Xiao and Y. Cao, Adv. Mater., 2004,
16, 537.
Single-layer PhOLEDs were fabricated with structures of ITO/
PEDOT : PSS (40 nm)/30 wt% G1 doped into PCBP or CBP
(90 nm)/LiF (1 nm)/Al (100 nm). Indium-tin oxide (ITO) with a
sheet resistance of 20 U per square was used as the substrate
and it was cleaned with surfactant and then deionized water.
Oxygen plasma treatment was made for 25 min to improve
the contact angle before film coating. Poly(3,4-ethyl-
enedioxythiophene) : poly(styrenesulfonate)
(PEDOT : PSS)
9 L. D. Hou, L. Duan, J. Qiao, W. Li, D. Q. Zhang and Y. Qiu, Appl.
Phys. Lett., 2008, 92, 263301.
film was spin-coated with thickness of 40 nm onto the ITO glass
to improve the hole injection and avoid the possibility of current
leakage. PEDOT : PSS film was baked at 120 ꢁC in air for 40
minutes. Next, the sample solutions in chlorobenzene were spin-
coated on top of PEDOT : PSS film and then baked at 120 ꢁC for
30 min in a glove box. The thickness of the emitting layer was
about 90 nm. In succession, a 1 nm thick film of LiF and a 100
nm-thick film of aluminium were vacuum deposited onto the
active layer under the pressure of 10ꢀ4 Pa. The typical active area
of the devices was 0.14 cm2. By using a PR650 spectra colorim-
eter, the EL spectra were measured. By using a Keithley 2400/
2000 source meter and a calibrated silicon photodiode, the
current–voltage and brightness–voltage curves of devices were
measured. The device performance was tested at room temper-
ature under ambient conditions.
10 M. K. Mathai, V. E. Choong, S. A. Choulis, B. Krummacher and
F. So, Appl. Phys. Lett., 2006, 88, 243512.
11 H. B. Wu, G. J. Zhou, J. H. Zou, C. L. Ho, W. Y. Wong, W. Yang,
J. B. Peng and Y. Cao, Adv. Mater., 2009, 21, 4181.
12 J. H. Zou, H. Wu, C. S. Lam, C. D. Wang, J. Zhu, C. M. Zhong,
S. J. Hu, C. L. Ho, G. J. Zhou, H. B. Wu, W. C. H. Choy,
J. B. Peng, Y. Cao and W. Y. Wong, Adv. Mater., 2011, 23, 2976.
13 T. Fuhrmann and J. Salbeck, in Adv. Photoch, John Wiley & Sons,
Inc., 2003, p. 83.
14 A. P. Kulkarni, C. J. Tonzola, A. Babel and S. A. Jenekhe, Chem.
Mater., 2004, 16, 4556.
15 G. Hughes and M. R. Bryce, J. Mater. Chem., 2005, 15, 94.
16 T. Earmme, E. Ahmed and S. A. Jenekhe, Adv. Mater., 2010, 22, 4744.
17 H. Sasabe and J. Kido, Chem. Mater., 2011, 23, 621.
18 A. Facchetti, M. Mushrush, H. E. Katz and T. J. Marks, Adv. Mater.,
2003, 15, 33.
19 B. A. Jones, M. J. Ahrens, M.-H. Yoon, A. Facchetti, T. J. Marks and
M. R. Wasielewski, Angew. Chem., Int. Ed., 2004, 43, 6363.
20 M.-H. Yoon, S. A. DiBenedetto, A. Facchetti and T. J. Marks, J. Am.
Chem. Soc., 2005, 127, 1348.
At the same time, according to a similar procedure, hole-only
and electron-only devices were also prepared with configurations
of ITO/PEDOT : PSS (40 nm)/CBP or PCBP (50 nm)/Au
21 B. H. Zhang, C. J. Qin, J. Q. Ding, L. Chen, Z. Y. Xie, Y. X. Cheng
and L. X. Wang, Adv. Funct. Mater., 2010, 20, 2951.
This journal is ª The Royal Society of Chemistry 2012
J. Mater. Chem., 2012, 22, 23680–23686 | 23685