The assessment of some Sb-Te single-source compounds for MOCVD applications

Article abstract of DOI:10.1016/0022-328X(94)05327-8

The new compounds Et2SbTeEt, Me2SbTeEt, Et2SbTeⁱPr and Et2AsTeEt have been prepared by reactions of Et4Sb2, Me4Sb2 or Et4As2 with ⁱPr2Te2 or Et2Te2.An alternative route to Et2SbTeEt involved the reaction of Et2SbBr with EtTeLi.The compounds are light sensitive, and some of them cannot be obtained pure because of facile radical decomposition or reverse dissociation to the corresponding R4E2 and R'2Te2.Thermal degradation of Et2SbTeEt in a hydrogen stream under conventional MOCVD condition gives a metal deposit containing Sb and Te in the ratio 1.6:1.The related compound Et2SbTeSbEt2 reacts with H2 at room temperature to give Te metal and presumably HSbEt2. Keywords: Antimony; Arsenic; Tellurium; MOCVD