ChemComm
Communication
maximum in the low field M(T) plots, the ordering temperature TN architecture (Chart 1C) with a well developed 2D electronic
for the AFM state can be estimated near 4 K. The critical field Hc structure.2a By contrast, the role of the CHꢀꢀꢀp supramolecular
required to invert the ordering can be approximated in terms of the synthons in 1a is to disrupt the coplanarity of radicals, to ruffle
turnover point in the M(T) plots, where the AFM maximum at 4 K in the molecular ribbon motif and produce a slipped p-stack architec-
the M(T) curves disappears; on this basis we estimate Hc B1 kOe.
ture with a more 1D electronic structure. As a result the performance
AC susceptibility measurements (Fig. 4c) support this interpretation of 1a, in terms of s(300 K) and Eact, is marginally lower than that of
and provide a more precise measure of the ordering temperature. At all 1b. The material is nonetheless very close to the Mott insulator/metal
cycling frequencies from 0.1 Hz to 1 kHz, the in-phase component w0 transition, and its ruffled ribbon structure is likely more compres-
shows a clear, frequency independent maximum at 4.5 K, which sible12 than the layered sheets of 1b, in which case its pressure
corresponds closely to the value obtained from DC cooling curve induced metallization may be a relatively facile process.
00
experiments. The response of the out-of-phase component w is much
weaker, as would be expected for a low dimensional system.
We thank the Natural Sciences and Engineering Research
Council of Canada for financial support.
The field dependence of the phase transition can be seen more
clearly in isothermal magnetization measurements. As shown in
Fig. 4d, typical paramagnetic behavior is observed above 15 K, but
below this temperature the M(H) curves rise rapidly, indeed far more
quickly than related radicals that undergo field induced FM ordering.10
Also in contrast to other radical-based metamagnets, and despite the
low field required to induce magnetization reversal, the magnetization
is extremely slow to reach the full FM saturation value Msat = 1 mB
expected for a S = 12 system with a nominal g = 2. At T = 2 K, the value of
M(H) is still rising at H = 50 kOe, the limit of our experiments, but has
only reached 0.8 mB, or 80% of the full saturation value. This result is
perhaps not too surprising, when considered in conjunction with the
low value of TN/y = 0.3 and a positive Weiss constant in a material that
displays AFM ordering. Given the complexity of the crystal structure,
and the consequently large number of magnetic exchange interactions,
low dimensional and/or frustrated character to the magnetic response
is likely, and in such circumstances magnetization plateaus are
commonly observed.11
We reported earlier the results of ambient pressure, variable
temperature conductivity (s) measurements on the derivatives
1b–1e.2 Similar measurements, using the four-probe method on
cold-pressed pellets, have now been performed on 1a. Results for
the entire set are illustrated in Fig. 5, in the form of log plots of s
against 1/T. As may be seen, the conductivity of 1a s(300 K) =
6 ꢁ 10ꢂ3 S cmꢂ1, places it near the top of the pack, but its
activation energy, Eact = 0.16 eV, is a little higher than the average.
Notes and references
‡ Crystal data at 296.15 K for 1a: C6H1N2S4 M = 245.33, orthorhombic, a =
27.876(3) Å, b = 31.252(4) Å, c = 4.0004(5) Å, V = 3485.2(7) Å3, space group
Fdd2 (#42), Z = 16, Dcalcd = 1.870 g cmꢂ3, m = 1.042 mmꢂ1, flack = 0.06(8);
122 parameters were refined using 1873 unique reflections (Rint = 0.0235)
to give R = 0.0235 and Rw = 0.524 (observed data).
1 (a) J. M. Rawson, A. Alberola and A. Whalley, J. Mater. Chem., 2006,
16, 2560; (b) R. G. Hicks, in Stable Radicals: Fundamentals and Applied
Aspects of Odd-Electron Compounds, ed. R. G. Hicks, John Wiley & Sons,
Ltd., Wiltshire, 2010, p. 317; (c) I. Ratera and J. Veciana, Chem. Soc. Rev.,
2012, 41, 303; (d) R. C. Haddon, ChemPhysChem, 2012, 13, 3581;
´
(e) R. T. Boere and T. L. Roemmele, Comp. Inorg. Chem. II, 2013, vol. 1,
p. 375; ( f ) J. M. Rawson, J. J. Hayward, Handbook of Chalcogen Chemistry:
New Perspectives in Sulfur, Selenium and Tellurium, 2013, vol. 2, p. 69;
(g) A. W. Cordes, R. C. Haddon and R. T. Oakley, Phosphorus, Sulfur Silicon
Relat. Elem., 2004, 179, 673; (h) K. V. Shuvaev and J. Passmore, Coord.
Chem. Rev., 2013, 257, 1067; (i) K. E. Preuss, Dalton Trans., 2007, 2357.
2 (a) A. Mailman, S. M. Winter, X. Yu, C. M. Robertson, W. Yong, J. S. Tse,
R. A. Secco, Z. Liu, P. A. Dube, J. A. K. Howard and R. T. Oakley, J. Am.
Chem. Soc., 2012, 134, 9886; (b) X. Yu, A. Mailman, K. Lekin, A. Assoud,
C. M. Robertson, B. C. Noll, C. F. Campana, J. A. K. Howard, P. A. Dube
and R. T. Oakley, J. Am. Chem. Soc., 2012, 134, 2264; (c) X. Yu, A. Mailman,
K. Lekin, A. Assoud, P. A. Dube and R. T. Oakley, Cryst. Growth Des., 2012,
12, 2485; (d) X. Yu, A. Mailman, P. A. Dube, A. Assoud and R. T. Oakley,
Chem. Commun., 2011, 47, 4655.
3 (a) N. F. Mott, Proc. Phys. Soc., London, Sect. A, 1949, 62, 416;
(b) J. Hubbard, Proc. R. Soc. London Ser. A, 1963, 276, 238.
4 G. R. Desiraju, Angew. Chem., Int. Ed. Engl., 1995, 34, 2311.
5 (a) N. J. Clecak, S. Jose, R. J. Cox, L. Gatos, S. L. Solar, S. Jose and
H. K. Wurster, US Pat., 3489558, 1970; (b) A. Banerjee and
I. N. Ngwendson, US Pat., 20070179311 A1, 2007.
´
6 R. T. Boere and T. L. Roemmele, Coord. Chem. Rev., 2000, 210, 369.
7 (a) A. J. Bondi, J. Phys. Chem., 1964, 68, 441; (b) I. Dance, New
J. Chem., 2003, 27, 22.
8 (a)S.Paliwal,S.GeibandC.S.Wilcox,J. Am. Chem. Soc., 1994, 116, 4491; (b)P.
Hobza, H. L. Selzle and E. W. Schlag, J. Am. Chem. Soc., 1994, 116, 3500;
(c) A. Gavezzotti and G. R. Desiraju, Acta Crystallogr., 1988, B44, 427;
(d) J. Bernstein, J. A. R. P. Sarma and A. Gavezzotti, Chem. Phys. Lett., 1990,
174, 361; (e) S. E. Wheeler and K. N. Houk, Mol. Phys., 2009, 107, 749.
9 J. M. D. Coey, Magnetism and Magnetic Materials, Cambridge
University Press, 2010.
10 (a) S. M. Winter, K. Cvrkalj, P. A. Dube, C. M. Robertson,
M. R. Probert, J. A. K. Howard and R. T. Oakley, Chem. Commun.,
2009, 7003; (b) W. Fujita, K. Takahashi and H. Kobayashi, Cryst.
Growth Des., 2011, 11, 575; (c) H. Nagashima, S. Fujita, H. Inoue and
N. Yoshioka, Cryst. Growth Des., 2004, 4, 19; (d) T. Ishida,
K. Tomioka, T. Nogami, H. Yoshikawa, M. Yasui, F. Iwasaki,
N. Takeda and M. Ishikawa, Chem. Phys. Lett., 1995, 247, 7.
11 (a) G. Catilla, S. Chakravarty and V. J. Emery, Phys. Rev. Lett., 1995,
75, 1823; (b) M. Hase, H. Kuroe, K. Ozawa, O. Suzuki, H. Kitazawa,
G. Kido and T. Sekine, Phys. Rev. B: Condens. Matter Mater. Phys.,
2004, 70, 104426; (c) M. Kumar, S. E. Dutton, R. J. Cava and
Z. G. Soos, J. Phys.: Condens. Matter, 2013, 25, 136004.
Fig. 5 Plots of log s versus 1/T for radicals 1a–e; data for 1c correspond
to the MeCN adduct. Data for 1b–1e are from ref. 2.
Strong lateral FꢀꢀꢀS0 contacts in 1b, in combination with SꢀꢀꢀO0
and SꢀꢀꢀN0 interactions, link ribbons of radicals into rigorously
coplanar sheets of radicals, which gives rise to a brick wall
12 K. Lekin, A. A. Leitch, J. S. Tse, X. Bao, R. A. Secco, S. Desgreniers,
Y. Ohishi and R. T. Oakley, Cryst. Growth Des., 2012, 12, 4676.
This journal is ©The Royal Society of Chemistry 2014
Chem. Commun., 2014, 50, 785--787 | 787