3.5 h with undecylenic acid to provide a COOH-terminated alkyl
monolayer. Then, the terminal COOH groups were activated with NHS
by immersing the modified silicon surface for 3 h in a freshly prepared
mixture of a deaerated DMF solution containing EDC at 0.2 M and NHS
at 0.1 M. The covalent attachment of MWNTs on Si(111) was performed
by immersing overnight the NHS-activated silicon surface in a DMF
solution containing ca. 1 mg mL21 of ammonium-substituted MWNTs
previously neutralized with diisopropylethylamine (amount of amino
groups: 0.50 mmol per g of MWNTs).
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Fig. 4 J–V characteristics of the (+)Hg/MWNT/monolayer/p-Si(111)(2)
junction. The rectification ratio is ca. 5 6 104 at ¡2 V.
Although the occurrence of a charge transfer through the
pinhole defects of the monolayer bridge cannot be ruled out, its
contribution in the overall charge-transfer process is expected to be
small because both long-chain alkyl14 and undecanoic acid
monolayers showed good blocking properties in the presence of
the ferrocene mediator. Moreover, the possibility of a direct
electrical connection between MWNT and the silicon surface so
creating a ‘‘short-circuit’’ seems unlikely as a major pathway in the
mechanism of charge transport. To test the occurrence of such a
‘‘short-circuit’’, a mercury contact was formed to the MWNT-
modified silicon surface. A typical current density–applied bias
voltage (J–V) curve of the Hg/MWNT/monolayer/silicon junction
is shown in Fig. 4. A Schottky diode rectifying behaviour is clearly
observed with a transport mechanism governed by a thermionic
emission process as is generally the case for metal/insulator/
semiconductor (MIS) diodes.15 Furthermore, the shape and the
magnitude of the J–V curve are found to be similar to those
obtained for other alkyl monolayer-based silicon devices.16
In conclusion, the functionalized MWNT assemblies prepared
in this study allow an efficient electrical communication between
the semiconductor surface and a redox probe in solution. Further
SECM investigations with a polarized electrode configuration are
currently in progress in order to elucidate the mechanism involved
in the redox communication. We believe that such modified
surfaces can be useful for electrically transducing an biomolecular
recognition event
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L = d/a where it is the current at the tip electrode localized at a
distance d from the substrate, iinf is the steady-state current when the tip
is at an infinite distance from the substrate and a is the radius of the
UME.
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gives a fully reversible system. B. Fabre and F. Hauquier, J. Phys. Chem.
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13 F. Hauquier, G. Pastorin, P. Hapiot, M. Prato, A. Bianco and B. Fabre,
unpublished work.
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This work has been supported by CNRS, University of Trieste
and MIUR (PRIN 2004, prot. 2004035502). F. H. and G. P. are
recipients of a fellowship from MNRT. Dr. J. Ghilane (Universite´
de Rennes 1) is fully acknowledged for his help in SECM
experiments.
16 Y.-J. Liu and H.-Z. Yu, J. Phys. Chem. B, 2003, 107, 7803; E. J.
Faber, L. C. P. M. de Smet, W. Olthuis, H. Zuilhof, E. J. R.
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Notes and references
{ Firstly, p-type Si(111)–H, prepared by etching a clean silicon shard in ppb
grade NH4F 40% for 15 min, was reacted photochemically at 300 nm for
4538 | Chem. Commun., 2006, 4536–4538
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