Design of very transparent fluoropolymer resists for semiconductor manufacture at 157 nm

Article abstract of DOI:10.1016/S0022-1139(03)00075-7

Photolithography at 157 nm requires development of new photoresists that are highly transparent at this wavelength. Transparent fluoropolymer platforms have been identified which also possess other materials properties required for chemically amplified imaging and aqueous development. Polymers of tetrafluoroethylene (TFE), a fluoroalcohol-substituted norbornene and an acid-labile acrylate ester show the best combination of properties. A solution, semibatch, free-radical polymerization process was developed allowing synthesis of the terpolymers on a multikilogram scale. Further property enhancements may arise from replacing the norbornene with functionalized tricyclononenes. Formulated resists have been imaged in a 157 nm microstepper.