THIN SILICON DIOXIDE USING THE RAPID THERMAL OXIDATION (RTO) PROCESS FOR TRENCH CAPACITORS.

Article abstract of DOI:10.1149/1.2095542

Growth and electrical characteristics of thin silicon dioxide using the rapid thermal oxidation (RTO) process have been studied for planar and trench capacitors. Growth of silicon dioxide follows the linear-parabolic model. The activation energies of the linear rate constant B/A and the parabolic rate constant B are found to be 1. 98 and 1. 42 ev, respectively. Good electrical characteristics can be achieved by increasing the oxidation temperature from 1000 degree to 1150 degree C. For the trench capacitors oxidized at 1150 degree C, it is found that oxide breakdown occurs dominantly at the fields 10 to approximately 12 mv/cm, the leakage current density is 3 multiplied by 10** minus **1 A/cm**2 and the interface-state density is 3 multiplied by 10**1****1 A/cm**2 and the interface-state density is 3 multiplied by 10**1**0 cm** minus **2. The RTO process is proved to be a promising technique for the fabrication of trench capacitors.

Full text of DOI:10.1149/1.2095542

Downloaded on 2015-05-30 to IP 134.129.182.74 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-30 to IP 134.129.182.74 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-30 to IP 134.129.182.74 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-30 to IP 134.129.182.74 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-30 to IP 134.129.182.74 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-30 to IP 134.129.182.74 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).