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Plasma-enhanced chemical vapor deposition of silicon dioxide films using tetraethoxysilane and oxygen: characterization and properties of films

DOI: 10.1149/1.2221272

Source and publish data:

Journal of the Electrochemical Society p. 2604 - 2613 (1992)

Update date:2022-08-11

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Authors:

PatrickPatrick

SchwartzSchwartz

Chapple-SokolChapple-Sokol

CarruthersCarruthers

OlsenOlsen

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Article abstract of DOI:10.1149/1.2221272

SiO2 films were deposited in a commercial single wafer parallel plate plasma deposition reactor using tetraethoxysilane as the silicon source. Deposition conditions were varied to produce films with widely differing properties. Electrical, optical, mechanical, and wet-etch-rate characterization were then used to investigate the as-deposited film quality. Moisture uptake was also measured and related to the initial properties. The films were studied in an ongoing investigation of silicon dioxide interlevel dielectric films used in multilevel ultra large scale integrated chip wiring.

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Full text of DOI:10.1149/1.2221272

Downloaded on 2016-06-15 to IP 128.163.2.206 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).  
Downloaded on 2016-06-15 to IP 128.163.2.206 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).  
Downloaded on 2016-06-15 to IP 128.163.2.206 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).  
Downloaded on 2016-06-15 to IP 128.163.2.206 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).  
Downloaded on 2016-06-15 to IP 128.163.2.206 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).  
Downloaded on 2016-06-15 to IP 128.163.2.206 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).  
Downloaded on 2016-06-15 to IP 128.163.2.206 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).  
Downloaded on 2016-06-15 to IP 128.163.2.206 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).  
Downloaded on 2016-06-15 to IP 128.163.2.206 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).  
Downloaded on 2016-06-15 to IP 128.163.2.206 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).  

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