BIS(PORPHYRIN)ꢀ3,4:9,10ꢀPERYLENETETRACARBOXYDIIMIDE TRIADS
7
The structure of APs prepared in this work was conꢀ transition temperature of the prepared APs. For examꢀ
1
19
13
firmed by IR data and H, F, a n d C NMR spectra. ple, the latter for phenolꢀcontaining AP IX is 354
Thus, the IR spectrum of initial AP VI
Such a high lithographic parameters of resists based on
.39 dL/g, 0.5% solution in DMA, 25 C) exhibits
absorption bands typical for fiveꢀmembered imide
°C.
(
η
=
red
the prepared APs exceed considerably those for
recently proposed lightꢀsensitive system [15].
0
°
–
1
rings: 1707, 1668, 1356, and 730 cm . Let us note the
Thus, we showed, for the first time, the possibility
–1
presence of absorption band at 3320 cm (NH in pyrꢀ to prepare APs containing bis(porphyrin)perylenediꢀ
role fragments) in the IR spectra of all studied polyꢀ imide triads in the main chain as building blocks. We
mers.
V
developed a simple and convenient method for the
synthesis of these polymers and performed a series of
sequential chemical transformations of APs to proꢀ
duce an unsaturated polymer with tetrafluorostyryl
side groups. Thermal properties of the prepared APs
with high glass transition temperature were studied.
1
The H NMR spectrum of polymer IX displays
proton signals of phenolic groups at 10.24 ppm, which
is absent in AP X. On the contrary, the latter spectrum
shows new signals due to different protons of fluoꢀ
rostyrene fragments. The signals at 5.74 ppm
Negative photoresists based on AP X and anthrylsulfoꢀ
(
CH =CH–) and 6.14 ppm (CH =CH–) have anaꢀ
2
2
nium salt were developed. The designed photoresists
were shown to have high lithographic parameters.
These resists can be promising in manufacture of
semiconducting devices.
lytical value. The spectra of polymers VI and VIII disꢀ
play a singlet signal at 3.89 ppm related to the protons
of methoxy groups. This signal disappears in the specꢀ
trum of polymer IX owing to demethylation.
Analytical procedures were reported elsewhere [8, 14].
13
The C NMR spectra of the prepared polymers
exhibit signals of carbon atoms of imide carbonyls at
1
63.05 and 162.9 ppm, as well as signals of carbon
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13
1
23.5, and 123.2 ppm. The C NMR spectrum of
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CH =CH–) and 121.8 ppm (CH =CH–). The 19
X
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°С
.
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X
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These resists exhibit high light sensitivity: optimal
13677.
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2
exposure dose was equal to 127 mJ/cm on irradiation
1
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5
24.
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The studied resists have high resolution (topologiꢀ
cal structures with minimal size of elements of 0.6
μ
m
were formed in a 1.0ꢀ m polymer film based on AP X)
μ
1
4. Vainer, A.Ya., Dyumaev, K.M., Kovalenko, A.M.,
and plasma resistance adequate to contemporary
lithography. The linear size alteration of topological
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resists based on AP
X
is not larger than 0.04 m. The
μ
high reproducibility of linear size of micro images is
explained, in our opinion, by the rather high glass
Translated by I. Kudryavtsev
DOKLADY CHEMISTRY Vol. 466
Part 1
2016