Chemistry of Materials
Article
and then ethanol. The C-TiO layer was prepared by spraying TAA
solution in ethanol (0.2 mL of TAA in 6 mL of anhydrous ethanol) at
Table 2. Photovoltaic Parameters of Reverse (R) and
Forward (F) Scans Obtained from the Champion Devices
Based on Various HTMs
2
4
50 °C. SnO nanoparticles were diluted with deionized water in a
2
ratio of 1:4 and coated on the C-TiO substrate at a speed of 3000
rpm for 20 s with a ramp-up of 2000 rpm s followed by the final
2
HTMs
Jsc (mA cm−2) Voc (V) FF (%) PCE (%)
−1
heating at 150 °C for 10 min. A 10 mg/mL concentration solution of
Cz-OMeDPA R
Cz-OMeDPA F
23.62
23.35
24.15
24.16
23.7
23.24
23.59
23.26
24.05
24.07
23.51
23.61
23.36
22.16
24.05
24.22
1.009
0.985
1.071
1.021
1.001
0.971
1.054
1.004
1.054
1.015
1.012
0.988
0.993
0.946
1.079
1.039
74.3
72.6
77.4
76.6
77.2
73.4
75.1
74.2
78.3
75.9
76.3
76
17.77
16.73
20.06
18.95
18.33
16.60
18.72
17.38
19.89
18.53
18.15
17.78
16.55
14.19
20.25
19.33
PCBM in chlorobenzene was prepared and was spin-coated on the
SnO layer at a speed of 3000 rpm for 20 s with a ramp-up of 2000
2
2
2
2
2
3
3
3
3
4
4
4
4
Cz-OMeDPA R
Cz-OMeDPA F
Cz-OMeDPA-OH R
Cz-OMeDPA-OH F
Cz-OMeDPA R
−1
rpm s followed by the final heating at 100 °C for 10 min. Afterward,
perovskite solutions (the ratio of PbI , MAI, FAI, and PbBr was
2
2
1
:0.16:0.84:0.11, and 1.38 mmol/mL PbI solution and 0.305 mmol/
2
mL MACl solution were added to the perovskite solution; the solvent
was prepared by mixing DMSO and DMF in a ratio of 1:4) were
successively spin-coated on the substrates at 1000 rpm for 10 s and
Cz-OMeDPA F
5
000 rpm for 30 s, respectively. Chlorobenzene (200 μL) was added
dropwise for 10 s at 5000 rpm. Perovskite films were annealed at 150
C for 10 min. The control HTM solution was prepared by dissolving
5 mg of spiro-OMeTAD (Merck) and additives in 1 mL of
chlorobenzene. For each sample solution of the synthesized HTMs,
0 mg of the compound was dissolved in 1 mL of chlorobenzene. Li-
Cz-OMeDPA-OH R
Cz-OMeDPA-OH F
Cz-OMeDPA-OH R
Cz-OMeDPA-OH F
Cz-OMeDPA R
°
7
71.1
67.5
77.9
76.7
5
Cz-OMeDPA F
bis(trifluoromethanesulfonyl)imide (18 μL) from the stock solution
(520 mg in 1 mL of acetonitrile), 13 μL of FK209 [tris (2-(1H-
pyrazol-1-yl)-4-tert-butylpyridine)-cobalt(III) tris(bis
spiro-OMeTAD R
spiro-OMeTAD F
(trifluoromethylsulfonyl)imide) (375 mg in 1 mL of acetonitrile)],
and 30 μL of 4-tert-butylpyridine were added as additives. The HTM
layer was formed by spin-coating the solution at 4000 rpm for 20 s. As
the final step, the 70 nm thick Au electrode was deposited by thermal
evaporation. All preparative work to deposit PCBM, perovskite, and
HTMs was performed inside the glove box under nitrogen to
minimize the influence of moisture and oxygen.
METHODS
■
Ionization Potential Measurements. The solid-state ionization
potential (I ) was measured according to the electron photoemission
p
42−44
in air
by dissolving HTMs in THF and coating layers of 0.5−1
μm thickness on the Al plate, which was precoated with methyl
methacrylate and methacrylic acid copolymer adhesive layers (∼0.5
μm thick). Samples were illuminated with monochromatic light
originating from a quartz monochromator with a deuterium lamp.
Device Characterization. The SEM of the film morphology was
investigated by using a high-resolution SEM (Merlin, Zeiss) equipped
with a GEMINI II column and a Schottky Field Emission gun. Images
were acquired with an in-lens secondary electron detector. For the PL
lifetime measurements, samples were excited with a 408 nm pulsed
laser (MDL 300, PicoQuant) with a pulse energy density of 40 μm
−
8
The power of the incident light beam was 2−5 × 10 W. A negative
voltage of −300 V was supplied to the sample substrate. A counter
2
electrode with a 4.5 × 15 mm slit for illumination was placed at a
−
2
cm . Current−voltage characteristics were recorded by applying an
external potential bias to the cell while recording the generated
photocurrent with a digital source meter (Keithley Model 2400). The
light source was a 450 W xenon lamp (Oriel) equipped with a Schott
K113 Tempax sunlight filter (Praezisions Glas & Optik GmbH) to
match the emission spectrum of the lamp to the AM1.5G standard.
Before each measurement, the exact light intensity was determined
using a calibrated Si reference diode equipped with an infrared cutoff
distance of 8 mm from the sample surface. For the photocurrent
measurement, the counter electrode was connected to the input of the
BK2-16 type electrometer working in the open input regime. The
strength of the photocurrent in the circuit under illumination was
−
15
−12
1
0
−10
A. The photocurrent I depends on the incident light
0.5
photon energy hν. The I = f(hν) dependence was plotted. The
dependence of the photocurrent on incident light quanta energy is
described by a linear relationship between I0.5 and hν near the
filter (KG-3, Schott). The cells were masked with an active area of
threshold. The linear part of this dependence was extrapolated to the
2
0
.09 cm to fix the active area and reduce the influence of the
hν axis, and the I value was determined as the photon energy at the
p
scattered light for the small device. All measurements were carried out
at room temperature in air.
interception point.
Hole-Drift Mobility Measurements. Samples were prepared by
spin-coating the HTM solution on the polyester film with a
conductive Al layer. The thickness of the spin-coated layer was 5−
ASSOCIATED CONTENT
sı Supporting Information
45,46
■
1
0 μm. The hole-drift mobility was measured by XTOF.
The
*
electric field was created by positive corona charging. Charge carriers
were generated at the layer surface by illumination with pulses of the
nitrogen laser (pulse duration, 2 ns; wavelength, 337 nm). The layer
surface potential decreased up to 1−5% of initial potential before
illumination as a result of pulse illumination. The capacitance probe
connected to the wide frequency band electrometer measured the
General procedures, synthetic methods, additional
speed of the surface potential decrease dU/dt. The transit time t was
t
determined by the kink on the curve of the dU/dt transient on a
double logarithmic scale. Drift mobility was calculated according to
2
the formula μ = d /U t , where d is the layer thickness and U is the
■
0
t
0
surface potential at the moment of illumination.
Corresponding Authors
Thermal Properties. DSC was performed with a Q10 calorimeter
Vytautas Getautis − Department of Organic Chemistry,
1
(
TA Instruments) at a scan rate of 10 K min− under a nitrogen
atmosphere. The glass-transition temperature of each synthesized
compound was determined during the second heating scan. TGA was
performed with a Q50 TGA (TA Instruments) at a scan rate of 10 K
−
1
Mohammad Khaja Nazeeruddin − Group for Molecular
min under a nitrogen atmosphere.
Device Fabrication. The chemically etched FTO glass (Nippon
Sheet Glass) was cleaned with detergent solution, followed by acetone
Engineering of Functional Material, Institute of Chemical
́
Sciences and Engineering, Ecole Polytechnique Fédérale de
I
Chem. Mater. XXXX, XXX, XXX−XXX