ARTICLE IN PRESS
J. Wan et al. / Journal of Luminescence 121 (2006) 32–38
37
luminescence come from different crystal structure
of Zn SiO .
characterized to the formation of a-phase zinc
silicate nanoparticles and nanorods, that show
green luminescence centering at 525 nm, and the
other one is characterized as b-phase nanorods,
showing yellow luminescence occurring at 575 nm.
The as-synthesized Zn SiO nanorods in the
2
4
Combining Fig. 1 with Fig. 4, it can be
concluded that Zn SiO nanorods have higher
PL intensity than Zn SiO nanoparticles. It is well
2
4
2
4
known that nanosized materials have large surface
area. The large surface area has the serious
drawback in PL intensity due to the introduction
of a large number of defects into the phosphor
crystal. Defects have serious implications for
luminescence materials as they provide non-
radiative recombination routes for electrons and
holes. In order for the material to be as efficient as
possible, the number of electron/hole recombina-
tions via optically active centers must be max-
imized. Therefore, the crystalline crystal is as
important as the choice of host materials and the
light-emitting center. If the host materials have
high crystalline and little surface area, the propor-
tion of surface-damaged region to undamaged
bulk decreases. Higher PL intensity can be
obtained as a result of the improved crystal quality
2
4
presence of surfactant SDS have higher PL
intensity than Zn SiO nanoparticles prepared in
2
4
the absence of SDS. It is attributed to the low
surface area and high crystallinity of Zn SiO
2
4
nanorods. Furthermore, this article provides a
simple route to obtain Mn-doped Zn SiO phos-
2
4
phors with different luminescence and PL inten-
sity. The results may provide helpful guidance for
the application of Mn-doped Zn SiO phosphors.
2
4
Acknowledgements
This work is supported by the National Natural
Science Foundation of China and the 973 Project
of China.
[
24]. Annealing treatment is an effective way to
improve the emission intensities of phosphor due
to low surface defects and improved crystallinity
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