EXPERIMENTAL AND COMPUTATIONAL…
PHYSICAL REVIEW B 70, 214409 (2004)
the pyrites solid solutions Co1−xFexS2 in the scheme dis-
played in Fig. 9. For low filling of eg states (x approaching
1), the electronic structure is characterized by “boxlike”
states above EF, with a very sharp rise in the number of
states with energy, as depicted in Figs. 9(a) and 9(b). The
origins of this sharp rise, as we have demonstrated, are S-
S antibonding states, which persist just above the EF
through the solid solution series. The states are sharp be-
cause they are pseudomolecular. Even small filling of
empty states results in the Stoner criterion being fulfilled6
and the rapid onset of ferromagnetism.4,11 The details of
the insulator-metal transition at very low filling of the eg
band have not been examined by us. Within density func-
tional theory, any finite filling of the eg levels would result
in metallic behavior, and correctly describing the localization
near the FeS2 composition would require methods that go
beyond the present treatment. The important role played
by the shape of the DOS in fulfilling the Stoner criterion
has been examined in detailed for transition metals by
Andersen et al.41
ACKNOWLEDGMENTS
We thank J. Gopalakrishnan for pointing us towards CoS2
and Ryan Hummel (IGERT undergraduate intern) for help
with sample preparation. Discussions with, and help from
Ole Andersen, Nicola Spaldin, Kiril Katsov, and Pio Baettig
are gratefully acknowledged. This work was partially sup-
ported by the MRL program of the National Science Foun-
dation under the Award No. DMR00-80034, including a seed
grant. C.E. thanks Nicola Spaldin and the Materials Research
Laboratory for support.
Electronic address: ramesha@engineering.ucsb.edu
*
18 O. Jepsen and O.K. Andersen, STUTTGART TB-LMTO-ASA Program
version 47, MPI für Festkörperforschung, Stuttgart, Germany,
2000.
†Electronic address: seshadri@mrl.ucsb.edu
‡Electronic address: ederer@mrl.ucsb.edu
§Electronic address: tao.he@usa.dupont.com
ʈElectronic address: mas.subramanian@usa.dupont.com
1 S. Das Sarma, Am. Sci. 89, 516 (2001); D.D. Awschalom, M.E.
Flatté, and N. Samarth, Sci. Am. (Int. Ed.) 286, 66 (2002); N.A.
Spaldin, Magnetic Materials, Fundamentals and Device Appli-
cations (Cambridge University Press, Cambridge, England,
2003).
2 J.M.D. Coey and S. Sanvito, J. Phys. D 37, 988 (2004).
3 J.E. Pask, L.H. Wang, C.Y. Fong, W.E. Pickett, and S. Dag, Phys.
Rev. B 67, 224420 (2003).
19 R. Dronskowski and P.E. Blöchl, J. Phys. Chem. 97, 8617
(1993).
20 J.-F Bérar and P. Garnier, Computer code XND, 1992, available
21 O.K. Andersen, Phys. Rev. B 12, 3060 (1975).
22 J.P. Perdew and Y. Wang, Phys. Rev. B 33, 8800 (1986); J.P.
Perdew, J.A. Chevary, S.H. Vosko, K.A. Jackson, M.R. Peder-
son, D.J. Singh, and C. Fiolhais, ibid. 46, 6671 (1992).
23 U. von Barth and L. Hedin, J. Phys. C 5, 1629 (1972).
24 C. Ederer, M. Komelj, M. Fähnle, and G. Schütz, Phys. Rev. B
66, 094413 (2002).
4 H.S. Jarrett, W.H. Cloud, R.J. Bouchard, S.R. Butler, C.G. Fred-
erick, and J.L. Gillson, Phys. Rev. Lett. 21, 617 (1968).
5 G.L. Zhao, J. Callaway, and M. Hayashibara, Phys. Rev. B 48,
15 781 (1993).
25 A.H. MacDonald, W.E. Pickett, and D.D. Koelling, J. Phys. C 13,
2675 (1980).
26 G.K.H. Madsen, P. Blaha, K. Schwarz, E. Sjöstedt, and L. Nörd-
6 I.I. Mazin, Appl. Phys. Lett. 77, 3000 (2000).
7 L. Wang, T.Y. Chen, and C. Leighton, Phys. Rev. B 69, 094412
(2004).
ström, Phys. Rev.
B
64, 195134 (2001); see http://
27 J.P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77,
3865 (1996).
8 C.N.R. Rao and K.P.R. Pisharody, Prog. Solid State Chem. 10,
207 (1976).
28 R.D. Shannon and C.T. Prewitt, Acta Crystallogr., Sect. B: Struct.
Crystallogr. Cryst. Chem. 25, 925 (1969); R.D. Shannon, Acta
Crystallogr., Sect. A: Cryst. Phys., Diffr., Theor. Gen.
Crystallogr. 32, 751 (1976).
29 E. Nowack, D. Schwarzenbach, and T. Hahn, Acta Crystallogr.,
Sect. B: Struct. Sci. 47, 650 (1991).
9 F. Hulliger and E. Mooser, J. Phys. Chem. Solids 26, 429 (1965).
10 L. Néel and R. Bénoit, C. R. Hebd. Seances Acad. Sci. 237, 444
(1953).
11 J.F. DiTusa, S. Guo, D.P. Young, R.T. Macaluso, D.A. Browne,
N.L. Henderson, and J.Y. Chan, cond-mat/0306541 (unpub-
lished).
30 S. Finklea, L. Cathey, and E.L. Amma, Acta Crystallogr., Sect. A:
Cryst. Phys., Diffr., Theor. Gen. Crystallogr. 32, 529 (1976).
31 V. Eyert, K.-H. Höck, S. Fiechter, and H. Tributsch, Phys. Rev. B
57, 6350 (1998).
12 R.A. de Groot, F.M. Mueller, P.G. van Engen, and K.H.J. Bus-
chow, Phys. Rev. Lett. 50, 2024 (1983).
13 H. Yamada, K. Terao, and M. Aoki, J. Magn. Magn. Mater. 177-
81, 607 (1998).
32 S. Jobic, R. Brec, and J. Rouxel, J. Alloys Compd. 178, 253
(1992).
14 S.K. Kwon, S.J. Youn, and B.I. Lim, Phys. Rev. B 62, 357
(2000).
33 J. Zaanen, G.A. Sawatzky, and J.W. Allen, Phys. Rev. Lett. 55,
418 (1985).
15 T. Shishidou, A.J. Freeman, and R. Asashi, Phys. Rev. B 64,
180401 (2001).
34 We find, using s states of S as a reference, that the calculated
position of the Fermi energy shifts only very little across the
solid solution series.
16 S.F. Cheng, G.T. Woods, K. Bussmann, I.I. Mazin, R.J. Soulen,
Jr., E.E. Carpenter, B.N. Das, and P. Lubitz, J. Appl. Phys. 93,
6847 (2003).
35 J.M.D. Coey and M. Venkatesan, J. Appl. Phys. 91, 6671 (8345).
36 G.A. Landrum and R. Dronskowski, Angew. Chem., Int. Ed. 38,
17 H.M. Rietveld, J. Appl. Crystallogr. 2, 65 (1969).
214409-7