Journal of the American Chemical Society
Communication
specific heat, ratios Δc/γexpTc of 1.41 for YSi3 and 1.50 for LuSi3
were calculated. The resulting numbers are in accordance with
the value of 1.43 predicted by the Bardeen−Cooper−Schrieffer
(BCS) theory for weak electron−phonon coupling.
ACKNOWLEDGMENTS
■
We thank Susann Leipe for high-pressure syntheses; Yurii
Prots, Andreas Czulucki, Irene Margiolaki (ESRF), and
Caroline Curfs (ESRF) for synchrotron X-ray diffraction
experiments; Stefan Hoffmann and Susann Scharsach for
differential thermal analysis measurements; and Dr. Steffen
Wirth for competent discussions and critical reading of the
manuscript.
To identify the specific electronic states associated with
superconductivity, the total and partial DOS were analyzed in
detail (Figure 3; also see the SI). In all of the compounds, the
lower part of the valence band (below −6 eV) is dominated by
bonding silicon states, and the two species Si1 and Si2 behave
rather similarly. For YSi3 and LuSi3, the contribution of the
metal atoms is larger for those parts of the valence band that are
closer to the Fermi level, and at EF it is even larger than the Si
contribution per atom. The hybridization of metal d states near
EF with the Si 3p bands indicates important participation in the
superconductivity. This statement holds to a lesser extent for
the related compound CaSi3. Despite the pronounced similarity
of the network-related silicon bands, the participation of metal-
connected d states impedes a simple rigid-band approach. For
substantial d contributions, the calculated total DOS at EF (1.7
states per eV and formula unit) in conjunction with the
experimental Sommerfeld coefficient γexp allows to estimate the
electron−phonon coupling strength. Within the theory of
conventional electron−phonon-coupled superconductivity (a
short systematic discussion is given in a recent study16), the
resulting λ values of 0.6 for YSi3 and 0.65 for LuSi3 are in line
with sizable coupling that facilitates the formation of Cooper
pairs even for moderate densities of states at the Fermi level.
The topology of the bands and Fermi surfaces (Figure 3)
shows for all of the MSi3 compounds considerable anisotropy,
with the dispersion being significantly stronger within the plane
of the layers than perpendicular to them. The ratios of the
computed Fermi velocities parallel and orthogonal to the
covalent units varied from 2.9 in CaSi3 to 1.4 in LuSi3. With the
rather unique situation that the silicon network remains
essentially the same despite the chemical diversity of the
involved metal atoms, the theoretical findings effectively filter
out the relevance of metal d contributions for the direction
dependence of the physical properties. This identification is
considered an essential component for the effective tailoring of
metal−network interactions in structure families of phonon-
driven high-Tc materials. Moreover, the theory-guided realiza-
tion of BCS-type electron−phonon coupling in these emergent
metal−network ensembles underlines that combining high-
pressure synthesis techniques with predictive theoretical
analysis offers significant potential for the materials chemistry
of metastable covalent metals.
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(5) Precursors with composition M:Si = 1:2 were prepared by
inductive heating of the metals with Si(cF8) (Alpha Aesar, 99.9999%)
in sealed tantalum ampoules. Next, 1:1 mixtures of the disilicides and
Si(cF8) were treated at pressures between 12(2) and 15(2) GPa and
temperatures from 900(100) to 1400(150) K, yielding the trisilicides
MSi3 (M = Ca, Y). The synthesis of LuSi3 was performed using excess
silicon, corresponding to a Lu:Si ratio of 1:5. Pressures were generated
within Walker modules encapsulating MgO octahedra. Elevated
temperatures were realized by resistive heating of graphite sleeves
enclosing h-BN sample crucibles. Sample handling (except for the
high-pressure experiments) was performed in argon-filled glove boxes
(MBraun, H2O, O2 < 0.1 ppm). Crystallographic data: Space group
I4/mmm (No. 139), Z = 8. CaSi3: a = 726.76(4) pm, c = 1135.01(7)
pm; Ca1 (0, 0, 0.17384(7)), Uiso = 99(2) pm2; Ca2 (1/2, 0, 1/4), Uiso
= 113(2) pm2; Si1 (0.3356(1), 0, 0), Uiso = 66(2) pm2; Si2
(0.31399(6), x, 0.10589(5)), Uiso = 121(2) pm2; RP = 0.029, Rwp
=
0.036, Rexp = 0.009. YSi3: a = 723.10(3) pm, c = 1079.2(1) pm; Y1 (0,
0, 0.17050(9)), Uiso = 66(3) pm2; Y2 (1/2, 0, 1/4), Uiso = 63(3) pm2;
Si1 (0.3295(3), 0, 0), Uiso = 102(5) pm2; Si2 (0.3141(1), x,
ASSOCIATED CONTENT
■
S
* Supporting Information
Figures S1−S8 and Tables S1−S4. This material is available free
0.1117(1)), Uiso = 110(4) pm2; RP = 0.083, Rwp = 0.115, Rexp
=
0.101. LuSi3: a = 718.35(8) pm, c = 1047.1(1) pm; Lu1 (0, 0,
0.1683(1)), Uiso = 253(2) pm2; Lu2 (1/2, 0, 1/4), Uiso = 254(2) pm2;
Si1 (0.3309(6), 0, 0), Uiso = 270(10) pm2; Si2 (0.3126(2), x,
0.1167(2)), Uiso = 259(9) pm2; RP = 0.054, Rwp = 0.076, Rexp = 0.037.
Details of data collection and refinement and interatomic distances are
given in the SI.
AUTHOR INFORMATION
■
Corresponding Author
(6) (a) Hume-Rothery, W. Philos. Mag. 1931, 11, 649−678. (b) Zintl,
E.; Brauer, G. Z. Phys. Chem., Abt. B 1933, 20, 245−271. (c) Zintl, E.
Angew. Chem. 1939, 52, 1−6. (d) Klemm, W.; Fricke, H. Z. Anorg. Allg.
Chem. 1955, 282, 162−168. (e) Busmann, E. Z. Anorg. Allg. Chem.
Present Address
†BASF AG, 67056 Ludwigshafen, Germany.
Notes
1961, 313, 90−106. (f) Schafer, H.; Eisenmann, B.; Muller, W. Angew.
̈
̈
The authors declare no competing financial interest.
Chem., Int. Ed. Engl. 1973, 12, 694−712. (g) von Schnering, H. G.
13560
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