R. Boldt, W. Reichelt, O. Bosholm, H. Oppermann
Fig. 8 Single crystals grown by chemical vapor transport of a) α-
FeSi2, b) CoxFe1-xSi1 y, c) and d) β-FeSi2.
Fig. 10 Chemical vapour transport of β-FeSi2 (1273 K to 1073 K,
agent: 100 mg iodine)
are presented. From previous, tentative experiments we as-
sume that several steady states appear depending on the
composition of source and sink, respectively.
Earlier experiments have shown that FeSi, β-FeSi2, and
α-FeSi2 in the source exist after 4 days of transport. From
such a source mainly silicon and FeSi are deposited at the
beginning of the experiments, see Figure 10 up to point 1.
Later the deposition of FeSi and β-FeSi2 is observed with a
smaller transport rate. At the end of the transport experi-
ment the deposit of FeSi besides and on the surface of sili-
con is situated at the colder end of the ampoule. In the
middle of the ampoule we found a needle-like deposit of β-
FeSi2. The description of the transport behaviour of β-FeSi2
shows some unclearness. Therefore, further investigations
are necessary.
Fig. 9 Chemical vapour transport of FeSi (973 K to 1073 K)
5 Transport Balance
For continuous studies of transport processes a so called
transport balance was built up.
Acknowledgment. The authors wish to thank Dr. M. Dörr (TUD,
Institut für Angewandte Physik und Didaktik der Physik) for elec-
trical measurements, Priv.-Doz. Dr. S. Däbritz and E. Langer
(TUD, Institut für Oberflächen- und Mikrostrukturphysik) for
EDX investigations, Mrs. U. Schmidt (MPI CPfS, Dresden) for
ICP-OES investigations, Prof. Dr. R. Glaum (Universität Bonn) and
Dr. G. Behr (IFW Dresden) for the support of building up the
transport balance. Financial support of the Deutsche
Forschungsgemeinschaft (Projekt Op 62/5-4) is gratefully acknowl-
edged.
Our equipment is comparable with that described in the
literature [11]. The stored data (weight change per time in-
terval) can be smoothed mathematically and represented
graphically. The transport rates are obtained by differen-
tiation of measured data. The functionality of the method
is demonstrated by two examples.
It was possible to show that the chemical vapour trans-
port of FeSi could be described as a steady state transport,
see Figure 9. The transport rates calculated could be con-
firmed.
References
Figure 9 shows a representative course of weight change
(a) because of the deposition of FeSi in the sink. Graph b
indicates the incident transport rate as function of time. As
expected, the transport rate is nearly constant at 1.6 mg/h.
At the end of the experiment the transport rate drops to
zero because of the consumption of the source material.
Figure 10 shows the time course of transport rates of the
chemical vapour transport of β-FeSi2. The transport con-
ditions are the same as given in part 4.2. Graph a shows
again the course of weight change, whereas graph b displays
transport rates. In this graph two stages with different slope
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[2] O. Bosholm, H. Oppermann, Z. Naturforsch. 2000, 55b, 1199.
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[4] H. Massalski, Binary Alloy Phase Diagrams, Second Edition,
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[5] A. Wittmann, K. O. Burger, H. Nowotny, Monatsh. Chem.
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Z. Anorg. Allg. Chem. 2003, 629, 1839Ϫ1845