2
098
Journal of the American Ceramic Society—Li and Zhai
Vol. 88, No. 8
reported that the Ti–C reaction led to an increase in temperature
up to 1700 K in certain regions during MA; the Al–Ti–C system
in the stainless-steel container led to an increase in the surface
temperature up to 701C after being milled for 210 min. The re-
action temperature in this research is estimated to be above 1700
K because of the increase in surface temperature up to 881C. So
it is possible for the Ti–Si melt to form in a higher temperature
system.
(NH ) SO 1H SO solution. Using the above-mentioned syn-
4
thesis technique, pure Ti SiC powders can be obtained, with the
3 2
advantage that not only is the fabrication time shortened but
also high sintering temperature is avoided and a large amount of
energy is saved as compared with the reported technologies
mentioned in the Introduction.
4
2
4
2
IV. Conclusions
Finally, in a high-temperature system, formation of the Ti–Si
liquid spreads over the TiC particles, resulting in the rearrange-
ment of particles. Ti SiC is formed at the interfaces between the
Ti SiC has been synthesized by MA of Ti, Si, and C powders at
3 2
room temperature after milling for only 1.5 h. With increasing
Si content in the starting composition, not only did the amount
3
2
Ti–Si liquid and TiC particles as follows
of Ti SiC
3
2
rise but also its morphology changed, to become
SiC grains are
2
TiC þ Ti2Si ðliquidÞ ! Ti3SiC2
(2)
smooth. In the latter case, it is believed that Ti
3
2
covered with a thin layer of the Ti–Si phase as it precipitates
from the Ti–Si liquid.
The main reason for the formation of Ti SiC is that the
MSR is ignited during MA of elemental powders. During the
MSR process, a reaction between Ti and C is first ignited with a
large amount of heat release, which induces Ti and Si to form a
eutectic liquid, and then TiC dissolves into the melt and reacts
with it to form Ti SiC . Finally, Ti SiC precipitates and devel-
3 2 3 2
op a layered morphology. A simple reaction mechanism is pro-
posed to explain the formation of the final product.
A possible reaction mechanism is proposed as shown in
Fig. 13. At the initial MA stage, the mixed powders, consisting
of two brittle components of Si and C, become fragmented and
their particle sizes reduce continuously. Some fine Si and C par-
ticles are embedded into Ti particles, resulting in the refinement
of the Ti particles. With increasing milling time, particle distri-
bution tends to become more homogeneous (Fig. 13(a)). Once
the particle size decreases to a critical size, large areas of grain
boundaries are formed, and severe internal strain and defects are
induced by MA. It is well known that grain boundaries can act
as sources for dislocations. The defects and dislocations provide
a rapid diffusion pathway. It is assumed that a large amount of
C atoms diffuse rapidly through the pathway and accumulate in
the grain boundaries of Ti, forming Ti–C layers (Fig. 13(b)). In
such layers, Ti–C is only a transitional bonded state that is not
the chemical TiC, but the activation energy of Ti–C for the re-
3
2
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3
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3 2 3 2
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1
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(
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2
12
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14
3 2
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2
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3
2
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15
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3
2
16
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18
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20
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3
2
3
2
(
21
In conclusion, Ti
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3
SiC
2
can be synthesized by MA of the el-
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3
2
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3
2
22
6
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23
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&