Formation of Kondo lattice in La1-xCexNi

Article abstract of DOI:10.1143/JPSJ.55.3165

Temperature dependences of the resistivity and the susceptibility of single crystals of solid solution La_1-x Ce_xNi have been measured in the temperature range 2-300 K. We have obtained a phase diagram of La _1-x Ce_xNi which is consisted of three parts; (1) isolated Kondo region (x<0.6 and whole temperature region), where each 4f electron is in a localized trivalent state, (2) fairly isolated dense Kondo region (x>0.6 and high temperature region), where the 4f electron behaves as fairly localized electron although the valence of the Ce ion is more than three and (3) Kondo lattice region (x>0.6 and low temperature region), where the 4f state becomes a delocalized state.