ARTICLE IN PRESS
C.-L. Xu et al. / Journal of Solid State Chemistry 179 (2006) 1351–1355
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voltammetry show that the specific capacitance of the
electrode is about 254 F/g and has promising application in
electrochemical capacitor.
2. Experimental
The highly pure Al film (99.999%, about 3.0 mm) was
deposited on the p-type silicon substrate coated with a Ti
(about 300 nm) film by radio frequency sputtering. The
anodization was carried out in 0.3 M oxalic acid solution at
room temperature, 40 V for about 40 nm pores in diameter.
The resulting alumina film was etched away in 0.4 M
H3PO4, 0.2 M H2Cr2O4 at 40 1C for 20 min, and the
remaining aluminum was re-anodized under the same
conditions until the metal film was fully oxidized. To
remove the barrier layer, the anodization was continuously
processed for 90–120 min. The details of removing the
barrier layer will be reported in our later work.
The electrolyte was an aqueous solution of 0.5 M
Mn(CH3COO)2 for preparation of MnO2 nanowire array
thin films. Electrodeposition was carried out at room
temperature, using a three-electrode potentiostatic control
and direct current (DC) electrodeposition system with a
saturated calomel electrode as reference electrode, a
1.0 cm ꢀ 1.0 cm platinum plate as a counter electrode and
the AAO/Ti/Si substrate as working electrode. The
electrolysis was carried out at 1.0 V for 2 h.
After electrodeposition, the samples were immersed in
0.5 M NaOH solution for 1 h to remove the AAO on Ti/Si
substrate. For electrochemical measurement, the nanowire
arrays on Ti/Si substrate were used as working electrode,
platinum foil with the same area of the working electrode
and saturated calomel electrodes as the counter and
reference electrodes, respectively.
Fig. 1. FESEM images of an alumina template on a Ti/Si substrate
created using a two-step anodization process in 0.3 M oxalic acid solution
at room temperature: (a) top view, (b) side view.
The morphology of the porous anodic alumina film on
Ti/Si substrate and nanowire arrays was examined by field
emission scanning electron microscope (FESEM). Trans-
mission electron microscopy (TEM) was used to character-
ize the morphology of nanowires. The crystalline structure
of the samples was determined by X-ray diffraction
(XRD). Thermo-gravimetric and different thermal analysis
(TG–DTA) was performed for studying the change of
synthesized sample with temperature. The electrochemical
measurements of the samples were performed by means of
a CHI660 electrochemical working station.
[33]. From Fig. 1b, we can see that the thickness of the Ti
adhesion layer is approximately 300 nm and not uniform
because we cannot well control the zone of fracture of
sample when it is breached for FESEM observation. The
pores partly open to the Ti layer because of the short
oxidation time. The oxide barrier layer can be completely
removed by continuously prolonging the oxidation time for
DC electrodeposition.
The FESEM image in Fig. 2 shows the surface view of
MnO2 nanowire arrays. From Fig 2, we can find that many
clusters protrude from the Ti/Si substrate which provide
high surface area electrode. The clusters could result from
the situation in which the nanowires are uncovered from
the framework of the porous anodic alumina template but
freestanding incompletely. When the porous anodic alu-
mina template was dissolved away, the nanowires em-
bedded in the template were released gradually and inclined
to agglutinate together to minimize the system free energy.
Fig. 2 also shows that the nanowires are abundant,
uniform and well ordered in the large area. From Fig. 2
it can be estimated that the pore filling rate is above 90%,
and some nanowires are lost from the electrode surface.
The diameter and the length of the nanowires are
3. Results and discussion
After a two-step anodization in 0.3 M oxalic acid
solution at room temperature, the resulting template has
parallel pores with a fairly narrow size distribution, as
shown in Fig. 1. Fig. 1a shows that the porous alumina
structure has almost arranged the pore array with the
average pore diameter about 40 nm, the interspaces about
60 nm, and pore densities about 1010 cmꢁ2. But their
arrangement has lower order than AAO on bulk Al
probably duo to small grain [32] and thin aluminum films