APPLIED PHYSICS LETTERS 89, 051502 ͑2006͒
Stanislav Mráz and Jochen M. Schneidera͒
Materials Chemistry, RWTH Aachen University, Kopernikusstr. 16, D-52074 Aachen, Germany
͑Received 12 April 2006; accepted 15 June 2006; published online 1 August 2006͒
Low, medium, and high energy O− ion populations were experimentally detected during magnetron
sputtering of Al in an Ar/O2 atmosphere. Based on calculations, the authors propose that
nonsputtered O− ions originating from the target surface are accelerated in the cathode fall, while
sputtered O− ions may be excluded as a significant contribution to the high energy ion population.
Furthermore, the formation of medium energy O− ions is consistent with the notion of sputtered, in
the cathode fall accelerated, and subsequently dissociated AlO− and AlO2− clusters. These findings
may be of importance for understanding plasma energetics and growth involving electronegative
The significance of the ion flux and energy on the mi-
crostructure evolution of thin films grown by reactive mag-
netron sputtering was recently reviewed by Petrov et al.1
Furthermore, the authors discussed preferential growth of ni-
trides based on the differences in surface adatom ͑admol-
ecule͒ mobility. Alike altering of preferential orientation of
yttria stabilized zirconia films deposited by pulsed laser
deposition was reported by Voevodin et al.2 The film struc-
ture could be similarly controlled by the energy of the bom-
barding Zr+ ions by adjusting the negative substrate bias.
If electronegative reactive gases such as O2 are em-
ployed for film growth, the formation of negative ions is
expected. If the kinetic energy of the O− ions is large, they
may be of importance for the structure evolution even if a
negative substrate bias is applied. Tominaga et al. reported
the presence of energetic O− ions in the magnetron sputtered
Zn ͑Ref. 3͒ and Zr ͑Ref. 4͒ in an Ar/O2 atmosphere mea-
sured with time-of-flight mass spectrometry. Recently,
Zeuner et al.5 and Mišina et al.6 measured the O− energy
distribution function ͑EDF͒ for magnetron sputtered Si and
Ti in an Ar/O2 atmosphere, respectively. Zeuner et al.5 sug-
gested that the high energy O− ions with energy correspond-
ing to the target potential are generated at the target and
accelerated in the cathode fall. In contrast to the data pub-
lished by Zeuner et al.5 a report by Mišina et al.6 indicates
that the most probable energy of the O− ions is larger than
the target potential. The authors concluded that this may be
understood based on energy transfer by sputtering.6 Our re-
cent work7 is consistent with the proposal put forward by
Mišina et al.6 We have presented a simple model based on
sputtering theory, which describes the high and the medium
energy range of the measured O− EDF for magnetron sput-
tered zirconia and hafnia rather well.7 Based on comparing
our calculations with the measured O− EDF it is evident that
oxygen is sputtered prior to the acceleration over the cathode
fall.7
The presence of low, medium, and high energy O− ions is
reported and their origin is discussed.
A mass-energy analyzer ͑MEA͒ ͑PPM 422, Pfeiffer
Vacuum͒ was employed for the ion energy distribution mea-
surement. The measurement was carried out in a DN160/
100CF reducing cross pumped with a combination of a tur-
bomolecular and a rotary-vane pump with an effective
pumping speed of ϳ100 l/s down to the base pressure of
Ͻ1ϫ10−4 Pa.7 The MEA was located opposite to the target
at a distance of 70 mm, while the orifice was directed to-
wards the target racetrack resulting in a radial displacement
of the MEA of 26 mm with respect to the cathode axis. The
pulsed dc plasma was generated with an ENI RPG-100E
power supply ͑MKS Instruments͒ with the frequency of
50 kHz and a duty cycle of 90%. The total current was kept
constant at 900 mA corresponding to the current density of
14 mA/cm2. The total pressure and the p͑O2͒ were 0.8 and
0.07 Pa, respectively.
The EDF of O− ions is shown in Fig. 1 ͑solid line͒.
Three major in part overlapping ion populations can be ob-
served: low ͑from 40 to 120 eV͒, medium ͑from
80 to 220 eV͒, and high energy ͑from 240 to 340 eV͒ O−
ions with energy corresponding approximately to the target
potential within the negative half cycle. The origin of the
different ion populations may be as follows. According to
Refs. 3 and 6–8 the high energy ions may be sputtered from
From this short review it is evident that no consistent
picture of the origin of the O− EDF during magnetron sput-
tering emerges from studying the literature. Therefore we
have chosen to investigate the energy distribution of O− ion
for pulsed dc reactive magnetron sputtered alumina thin
films. The target surface was covered with an oxide layer.
FIG. 1. Measured energy distribution function ͑EDF͒ of O− ions ͑solid line͒
and theoretical EDF of sputtered O− ions ͑open square͒ accelerated in the
cathode fall. The distribution does not fit the measured high energy O− ions
well.
a͒
Electronic mail: schneider@mch.rwth-aachen.de
0003-6951/2006/89͑5͒/051502/3/$23.00
89, 051502-1
© 2006 American Institute of Physics